重复频率3Hz、100mJ高光束质量钕玻璃放大器的研制

研制了具有放大纳秒方形激光脉冲的高光束质量、高稳定的激光二极管(LD)抽运的钕玻璃激光放大器。为了获得较高的输出能量,采用LD泵浦的"串联式双程放大"高增益组件进行能量放大。为了获得高光束质量的光斑,利用液晶空间光调制器(LCSLM)对光束近场分布进行空间整形,使之产生特定的空间分布,进而对后级放大器增益不均匀性进行光学预补偿。放大器工作波长为1 053nm,工作频率为3 Hz,输入1nJ的3ns方形激光脉冲,输出激光脉冲能量为100mJ、光束口径为10mm×10mm的方光斑,能量不稳定度小于2%(均方根),净增益大于109。光束的近场调制度小于1.3∶1,远场焦斑衍射极限小于2DL,远场角漂移小于9.5μrad。     

基于液晶空间光调制器整形的重频100mJ全固态1053nm钕玻璃激光放大器(英文)

介绍了所研发的一台放大纳秒激光脉冲的高光束质量钕玻璃激光放大器。该放大器采用了多级LD泵浦与液晶空间光调制器进行整形相结合的技术,光束传输遵循抑制衍射、主动控制与补偿及空间滤波的原则。在重频为1 Hz时,将注入的3 ns、1 nJ的方形激光脉冲能量放大到115.3 mJ,能量净增益109倍,输出激光的能量分散度小于2%,光束的近场调制度小于1.23:1,远场光斑的角漂移小于9.8μrad,远场光斑的衍射限小于2DL。     

高稳定高性能皮秒光参量放大器抽运源研究

结合短脉冲光参量放大抽运源的需求,基于固体放大技术,对光纤锁模激光器输出的6nm带宽皮秒纳焦耳级激光脉冲进行放大,获得了6.2mJ的基频以及3.0mJ的倍频输出,输出脉冲的时间宽度为8.6ps,倍频光峰值功率密度为4.94GW/cm2。采用高增益的Nd3+…YLF再生放大器做前级放大器,利用其光谱增益窄化效应获得窄带的高功率光参量放大抽运光。理论计算表明,在此增益条件下,输出激光的光谱将被窄化至0.3nm。采取了合理的空间整形方案,输出激光的近场呈平顶分布,光束质量优良。再生放大器采用钢棒结构,降低温度变化对系统稳定性的影响,总能量输出稳定性优于1%(RMS)。     

425mJ高光束质量特殊取向Nd:YAG激光放大器

基于主振荡功率放大结构,采用特殊取向Nd:YAG激光放大器,获得高脉冲能量、高光束质量的激光输出。激光放大结构包含种子源、预放大级和主放大级三部分。在主放大级中,采用串联放置的激光二极管侧面抽运Nd:YAG棒状放大模块对种子光进行放大。为了获得高光束质量的输出光束,对不同切割方向Nd:YAG晶体棒的热退偏损耗进行了模拟。根据模拟结果,放大模块选择[100]切割方向的Nd:YAG晶体棒作为增益介质。在重复频率为200Hz、脉宽为25ns、脉冲能量为40μJ、光束质量接近衍射极限的种子光注入条件下,获得了425mJ脉冲能量输出,输出光光束质量因子为1.37,功率稳定度为0.81%。     

SGⅡ-5 PW激光系统大能量光参量放大器光束近场分布均匀性

为了提高神光Ⅱ 5PW(SGII-5PW)超短脉冲激光系统的运行安全性,针对大能量光参量啁啾脉冲放大(OPCPA)光束近场分布均匀性问题,从理论上进行了数值模拟,并与实验数据进行了对比分析。在1PW级放大器模拟中,以预放大器以及神光Ⅱ大能量抽运脉冲的测量数据为基础,利用参量耦合波方程组数值模拟方法,得到了近场填充因子与光通量对比度在光参量放大过程中的演变,并结合转换效率与输出稳定性进行讨论,得到了对应于高光束质量、高转换效率与高稳定性的非线性晶体长度优化范围,结果还表明抽运光对放大后光束均匀性影响较大,进一步提升神光Ⅱ第7路光束质量是大幅提升第2级OPCPA(OPCPA-Ⅱ)光束均匀性的切实途径。     

高能量高效率钕玻璃再生放大器

为了获得高能量、高效率的钕玻璃前置放大器,设计了一套钕玻璃再生放大系统。通过调节单程增益和优化腔模设计,使得增益介质中的小尺度自聚焦效应得到有效控制。在重复频率1Hz运行下,获得最大输出能量21mJ、脉冲宽度2.65ns的激光输出,相应的光-光转换效率为5%,总增益达108,光束质量因子M2=1.5,脉冲能量稳定性均方根(RMS)值小于2%(超过2h连续工作),光谱的中心波长为1052.92nm。     

高稳定激光二极管抽运Nd:YLF再生放大器

设计并实现了一种放大纳秒激光脉冲的高稳定的激光二极管(LD)抽运Nd:YLF再生放大器.为了获得高稳定的输出,再生放大器工作在饱和状态.此时,再生放大器输出稳定性最好,而且注入激光脉冲能量波动引起的输出激光脉冲波动被抑制.由于增益饱和效应,再生放大器输出脉冲出现时域波形失真,附加后缀脉冲能够减弱时域波形失真.放大器工作波长1053 nm,工作频率1 Hz.输入240 pJ的3 ns方波激光脉冲,输出激光脉冲能量4.2 mJ,总增益大于107,不稳定度小于1%(均方根),方波扭曲1.33.为3 ns方波激光脉冲引入其本身幅度0.75倍的后缀脉冲,输出激光脉冲方波扭曲由1.33降至1.17.     

高稳定激光二极管抽运Nd∶YLF再生放大器

设计并实现了一种放大纳秒激光脉冲的高稳定的激光二极管(LD)抽运Nd∶YLF再生放大器。为了获得高稳定的输出,再生放大器工作在饱和状态。此时,再生放大器输出稳定性最好,而且注入激光脉冲能量波动引起的输出激光脉冲波动被抑制。由于增益饱和效应,再生放大器输出脉冲出现时域波形失真,附加后缀脉冲能够减弱时域波形失真。放大器工作波长1053nm,工作频率1Hz。输入240pJ的3ns方波激光脉冲,输出激光脉冲能量4.2mJ,总增益大于107,不稳定度小于1%(均方根),方波扭曲1.33。为3ns方波激光脉冲引入其本身幅度0.75倍的后缀脉冲,输出激光脉冲方波扭曲由1.33降至1.17。     

超高斯平顶分布光束空间整形技术研究

高能激光器为了获得高光束质量的方形超高斯平顶分布的激光输出,需要对注入的高斯激光脉冲的几何轮廓和强度分布进行空间整形。数字微镜器件(DMD,digital moero-mirror device)是一种性能优异的、基于数字调制的空间整形器件,具备对比度高、分辨率高和抗干扰能力强等优点,非常适合高能激光器高电磁干扰的工作环境。基于DMD,研究了光束空间整形的算法和实验研究。通过二次整形,光束近场调制度(光强的最大值比平均值)由一次整形后的1.85∶1下降到1.33∶1,改善了28.1%,能量损耗为35.7%;并且,二次整形后的光束具有极强的稳定性,在写入整形光阑不变的情况下,输出光束近场调制度的分散度仅为1.77%,降低了环境的变化、"噪声"的随机分布对光束强度分布的影响。     

采用钛宝石薄片作为增益介质的再生放大器

实验研究了以钛宝石薄片作为增益介质的再生激光放大器,其钛宝石薄片厚度为2mm,前表面作为通光面,镀有对抽运激光和放大激光增透的高阈值双色介质膜,后表面作为反射面,镀有对抽运激光和放大激光高反的高阈值双色介质膜,晶体对抽运激光的吸收率大于80%(1次透射和1次反射)。在再生腔中,钛宝石晶体不仅作为增益介质,也作为反射腔镜,简化了放大腔腔型。钛宝石晶体采用端面冷却的方式,极大地降低了晶体中的热效应,从而提高了放大脉冲激光的光束质量,在此基础上获得了能量为5.2mJ的放大激光脉冲输出,能量转换效率达到11.5%,放大激光光束质量因子M2小于1.2。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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