DWDM系统啁啾高斯脉冲简并四波混频噪声标准差的计算

假定入射脉冲为啁啾高斯脉冲,考虑到各信道内的比特模式及比特序列初始相位的随机性,得到此种情况下的强度调制直接检测（IM/DD）密集波分复用系统（DWDM）简并四波混频噪声标准差的半解析的理论计算模型,这个理论模型同时考虑到各信道间的脉冲走离效应的影响,计算结果表明：除了群速度色散、信道间隔等是影响此种标准差的重要因素外,当高斯脉冲有较小的初始脉宽时,各信道比特序列的相对初始时延、初始啁啾参量都是重要的影响因素,计算结果同时表明：初始脉宽较小时,色散效应导致的脉宽随距离的变化对这种标准差值的影响不能忽略。     

高斯脉冲在光纤中传输的光纤光栅色散补偿研究

高斯脉冲在光纤中传输一段距离后，啁啾系数和脉冲宽度均要发生变化，不同啁啾系数和脉冲宽度的高斯脉冲经过啁啾光纤光栅反射后的脉宽压缩特性也不同。本文介绍了啁啾高斯脉冲在光纤中的传输特性以及啁啾高斯脉冲经啁啾光纤光栅反射后的传输特性。理论分析和实验均表明，使用啁啾光纤光栅实现长距离色散补偿时，最佳色散补偿长度与光栅位置有关。     

初始啁啾对高斯脉冲形成光孤子的影响

本文通过解薛定谔方程分别研究了线性光纤中色散导致具有初始频率啁啾的高斯脉冲展宽的详细物理过程和非线性光纤中自相位调制导致光脉冲频谱展宽的详细物理过程 ,得到高斯脉冲在光纤中群速度色散所导致的频率啁啾在反常色散区是下啁啾 (负啁啾 ) ,与脉宽的关系是线性的 ,自相位调制所产生的频率啁啾是上啁啾 (正啁啾 ) ,在脉冲的中心部分近似为线性 ,当CPβ2 <0时 ,脉冲有一个初始窄化的阶段等结论。最后用计算机模拟光孤子传输估算出形成孤子的初始啁啾范围值。     

FSK-DWDM四波混频的研究

考虑到DWDM系统中的比特序列的随机性、信道间脉冲走离效应等因素的影响。给出了调制格式为FSK,信道为非简并,入射脉冲为啁啾高斯脉冲波情况下的四波混频噪声标准差的理论计算模型,在考虑到多个信道对于探测信道的影响的情况下用实例对其进行分析。研究结果表明在讨论调制偏移频率与四波混频噪声标准差的关系中我们发现调制偏移频率是有最优取值的,特征宽度值的大小基本不会影响到最优取值的选取,但是较小的特征宽度值可以得到比较小的四波混频效应,然而群速度色散值的大小对于调制偏移频率与四波混频标准差的关系曲线图的影响较大,其绝对值在很小的情况下,调制偏移频率与四波混频标准差曲线图基本呈线性增长趋势,随着其绝对值的增大,曲线出现了起伏变化。     

色散缓变光纤中的脉冲宽度研究

计算了高斯型脉冲宽度在色散缓变光纤中的传播特性和初始啁啾对脉宽演变的影响。讨论发现与单模光纤相比，色散缓变光纤中脉冲展宽较慢，并能有效抑制脉冲展宽；初始啁啾对脉宽有较大影响，初始啁啾参量C过大会造成脉冲严重展宽。     

损耗和啁啾对皮秒脉冲孤子效应压缩的影响

在计及光纤损耗的前提下,近似求解非线性薛定谔方程,分析了单模光纤的负群速度色散区群速度色散(GVD)和自相位调制(SPM)对啁啾脉冲的作用,定量计算光纤损耗和初始正啁啾对皮秒脉冲孤子效应压缩的影响。结果表明,初始正啁啾改善了损耗对压缩参量的不良影响,遏制了最佳光纤长度的增加。若选取适当的光纤长度和初始峰值功率,可以实现正啁啾脉冲在单模光纤中的有效压缩。     

单模光纤中高斯脉冲无啁啾稳定传输

在分析单模光纤群速度色散(GVD)效应和自相位调制(SPM)效应相互作用的基础上,导出GVD和SPM共同作用引起的啁啾表达式,全面分析了色散长度L_D、非线性长度L_(NL)与啁啾变化的关系。结果表明:随着L_D/L_(NL)的不同,啁啾特性有着显著变化,当N=L_D/L_(NL)=1,即实现了单模光纤中群速度色散效应与非线性效应相互作用所致啁啾的最佳匹配,通过控制脉冲输入功率,可望实现高斯光脉冲无啁啾的稳定传输。     

单模光纤中高斯脉冲无啁啾稳定传输

在分析单模光纤群速度色朦胧（GVD）效应和自相位调制（SPM）效应相互作用的基础上，导出GVD和SPM共同作用引起的啁啾表达式，全面分析了色散长度LD、非线性长度LNL与啁啾变化的关系。结果表明：随着LD/LNL的不同，啁啾特性有着显著变化，当N=LD/LNL=1，即实现了单模光纤中群速度色散效应与非线性效应相互作用所致啁啾的最佳匹配，通过控制脉冲输入功率，可望实现高斯光脉冲无啁啾的稳定传输。     

单模光纤正常色散区啁啾演变研究

对单模光纤正常色散区，群速度色散所致啁啾、自相位调制所致啁啾以及两者共同作用所致啁啾的演变过程进行了研究。利用傅里叶变换法获得群速度色散所致啁啾、自相位调制所致啁啾的解析解，采用数值法得到了群速度色散效应与自相位调制效应共同起作用时，啁啾演变过程。由啁啾演变结果可得，在正常色散区可形成暗孤子，也可实现对皮秒脉冲压缩。     

初始啁啾补偿光纤色散效应的数值研究

以具有初始啁啾的高斯脉冲在单模光纤中的传输为例,分析、计算了线性初始啁啾对光纤二阶、三阶色散效应的影响,指出了初始啁啾进行色散补偿的适用范围和条件,并对二阶、三阶色散完全补偿光纤链路中40Gbit/s短脉冲传输效果进行了数值计算,结果表明,依据入射功率选择合适的初始啁啾,能使脉冲稳定传输距离大幅提升.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.