基于BACnet/IP协议智能楼宇网关系统功能设计

分析了传统楼宇自控系统的不足之处以及对智能化集中式楼宇自控系统的需求,并详细阐述了文章设计的智能楼宇网关系统的功能需求和系统设计的方案。本智能楼宇网关系统基于Web服务技术架构,主要实现BACnet协议栈解析、自动轮询推送、远程在线配置、BACnet对象读写以及日志管理、异常管理等功能。     

基于BACnet/XML的BACnet/WS集成模型的设计与实现

本文基于BACnet/XML协议和BACnet/WS接口标准,提出了一种全新的智能楼宇集成模型,设计和实现了集成模型中的核心BACnet/WS服务组件,通过理论分析和仿真测试验证了集成模型具有良好的系统性能,从而较好地解决了智能楼宇领域中的这一难题.     

说话人识别技术在智能家居中的应用

结合智能型楼宇控制系统的特点以及以人为本的理念,提出了一种用DSP实现的说话人识别实时系统．并结合楼宇自动控制网络(BACnet)协议,将系统设计为BACnet设备的一个嵌入式子系统,从而将语音识别技术应用到智能家居控制系统中。     

楼宇自控系统中BACnet网络节点平台的开发

针对楼宇自动化中BACnet协议的实现及协议栈移植的问题,提出了对协议栈交互模型简要的设计方法,介绍了移植到STM32开发板的过程。该方法分析了协议结构中应用层、网络层和数据链路层的实现过程。移植以BACnet-stack-0.8.2版本源代码为样本,根据标准对象的功能需求和硬件配置对BACnet协议栈进行剪裁和移植。实验结果使STM32开发板成为一个BACnet网络节点设备,能通过RS485与PC机上的虚拟设备进行通信,具有读写属性等服务的能力。     

基于BACnet的全光网络家庭信息中心

随着信息技术的发展，智能家庭信息平台已经成为新一代信息设备的主流。家庭信息中心（HIC）的开发涉及到各种不同的控制和通信系统的集成，因此用开放协议楼宇自动化与控制网络（BACnet）标准来开发智能家庭信息平台对集成各种系统有很大的帮助，为此提出了把光纤通信技术融入智能家庭信息中心的技术方案，阐述了粗波分复用（CWDM）在全光接入网的应用以及现代智能家庭信息中心的概念，分析了智能家庭信息中心全光化的可行性及其优点，最后展望了未来智能全光家庭信息中心的发展趋势。     

语音识别技术在楼宇控制系统中的应用

由于受识别率较低和计算量大的限制，语音识别的应用一直难以推广。根据楼宇控制系统的特点，文中提出了一种用DSP实现的数字连接词的语音识别实时系统，并结合BACnet协议，把系统设计成BACnet设备的一个嵌入式系统，从而把语音识别应用到楼宇控制系统中。     

蓝牙接入BACnet的智能家居技术设计与实现

本文介绍了蓝牙技术、BACnet协议和蓝牙智能家居局域网的概念.提出了一种将基于蓝牙技术的个人区域网(PAN)与基于BACnet的小区内部局域网相连接的解决方案,讨论了算法实现步骤、协议软件连接和系统硬件构成.     

基于身份认证的BACnet/IP分析与改进

为了解决BACnet/IP身份认证存在多种可攻击漏洞和密钥泄露带来的安全问题,提出了一种安全增强的BACnet/IP-SA协议认证方案。研究协议身份认证消息流模型,基于着色Petri网理论和CPNTools对身份认证消息流建模,采用Dolev-Yao攻击者模型和形式化分析方法对BACnet/IP进行安全性分析,发现协议漏洞并提出改进方案。BACnet/IP-SA协议使用设备的伪身份来保护真实身份信息,使用PUF响应进行认证,通过多信息集合的验证值来验证端身份的真实性并生成会话密钥。结合BAN逻辑和非形式化方法,对协议的安全性进行了证明。实验结果表明,所提方案能有效抵抗多类攻击和密钥泄露带来的安全威胁,在减少计算开销的同时增强了协议身份认证的安全性。     

国际新闻

正VACON成为BACnet国际的金牌会员-改善楼宇自动化的舒适性控制http://www.vacon.com2014年6月26日,全球交流驱动器制造商Vacon作为金牌会员加入全球90多家领先的楼宇自动化供应商和集成商以推广使用BACnet作为通信协议。BACnet是Vacon在其交流传动产品中作为标准完全支持的适用于楼宇自动化市场的主要通信协议之一。VACON提供VACON 100 HVAC和VACON 100 X系列产品用于楼宇自动化和暖通空调应用。这些交流驱动器改善舒适度控制,并通过泵和风机的智能调速来实现大量的节能。     

基于ZigBee的智能楼宇控制

新的ZigBee协议在无线传感器网络和各种无线终端控制方面有良好的前景,基于无线技术的门禁与其它无线通信技术相比,ZigBee更有能力胜任门禁系统的通信。文章以智能门控系统为研究方向,并结合新兴ZigBee技术,提出利用ZigBee技术的智能楼宇门控系统,为传感器网络和控制设备提出了新的方案。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.