基于最大似然法的天波超视距雷达相位解污染算法

电离层解相位污染是天波超视距雷达信号处理的关键技术之一。由于模型的不准确性和电离层的复杂性,已有算法在污染较大时大多精度不高。该文提出一种基于最大似然法的相位解污染算法。该算法将信号建模为相位多项式,通过最大化似然函数来实现污染相位的估计。为了避免最大似然法中的矩阵求逆运算,该文进一步将最大似然问题转化为最小二乘问题,利用遗传算法求解相位系数。仿真结果表明,与传统算法比较,该文算法具有以下优点:相比HRR算法和CED算法,该文算法精度更高,校正后的信号频谱更加尖锐;在相位污染较大的情况下,该文算法仍具有较高的精度,有利于目标信息的提取;该文算法采用高阶多项式,避免分段处理和矩阵求逆,简化了运算。     

天波雷达电离层污染校正与海杂波抑制

在天波超视距雷达（OTHR）中,舰船目标的多普勒频率与海杂波谱接近,电离层污染会导致海杂波频谱展宽,从而淹没邻近的舰船目标信号。考虑到电离层污染会导致OTHR回波信号的相位缓慢变化,提出了采用相位梯度法对回波信号进行电离层污染校正;利用污染校正后的海杂波可以近似为两个单频信号之和这一特点,提出了应用奇异值分解来实现对海杂波的抑制。仿真结果表明,文中算法可以有效地校正电离层污染,抑制海杂波,显著提高信杂比,从而有效解决强海杂波对舰船目标的遮蔽问题。与现有的HRR—SVD算法相比,文中算法可以适用于相干积累时间较长和电离层污染较大的情况,防止残留的海杂波形成虚警,提高了OTHR对海杂波附近舰船目标的检测能力。     

高频雷达回波信号去电离层污染

高频雷达回波信号受到电离层污染从而影响了雷达的探测性能，因此需要进行去污染处理。该文通过对高频雷达信号处理过程的分析，阐明了电离层扰动对回波信号污染的机理。根据电离层污染具有高度空间相关性的特点，将成像雷达中的秩-相位误差估计聚焦方法适当修正后应用于高频雷达回波信号去电离层扰动污染。仿真研究证明了该文方法的良好去污染效果。     

电离层相位污染和多模传播检测与识别研究

相位污染和多模传播检测与识别是抑制电离层引起天波超视距雷达杂波频谱展宽亟需解决的关键问题.文中提出了一种电离层相位污染和多模传播检测与识别算法,该算法综合应用回波信号协方差矩阵时间可逆性、回波序列Hankel矩阵特性和返回散射传播模式区智能提取方法,实现了无相位污染和多模传播(I)、仅存在相位污染(II)、仅存在多模传播(III)、相位污染和多模共存(IV)四类情形检测与识别,为后续抑制相位污染和多模传播提供依据.经仿真和试验数据验证,上述方法有效.     

改进的分段多项式建模的电离层相位去污染新方法

时变电离层的相位污染使天波超视距雷达(OTHR)的回波多普勒谱展宽.近年来已发展了基于分段的相位多项式参数建模和高阶模糊函数的方法估计和校正电离层的相位污染.由于实际电离层信道为时变的且不可预测,因此,采用预先确定阶数的建模方法有较大的局限性.本文提出了一种改进的方法来选择相位多项式建模的阶数.该方法引入三个判决准则对分段后的信号作建模阶数的自适应选择.实验结果表明,改进后的算法比原有的分段相位多项式参数估计方法以及其他两种电离层校正方法具有更好的性能,特别在校正快速变化的电离层相位污染时具有更为明显的优势.     

L波段雷达电离层高速运动目标ISAR成像补偿方法

目标高速运动和电离层效应都会对低频段宽带线性调频雷达信号的相位产生调制现象,进而降低逆合成孔径雷达(ISAR)成像分辨率。为得到清晰的目标ISAR图像,需有效消除这两者对目标回波的影响。该文首先建立电离层高速运动目标回波的信号模型,再根据目标回波为高阶多项式相位信号的特点,提出基于离散多项式变换的高阶相位估计算法,利用高阶相位估计值进行回波信号相位调制分量补偿,实现ISAR成像的自聚焦。仿真实验表明,该算法可以准确估计回波信号高阶相位参数,提高ISAR成像质量。     

基于距离谱分析的方位多通道HRWS SAR通道偏差稳健估计

在方位多通道高分辨宽测绘带合成孔径雷达(HRWS SAR)系统中,通道间幅相偏差和通道时延偏差将会导致多普勒解模糊性能下降。为了解决该问题,该文提出一种基于距离频谱分析的方位多通道HRWS SAR通道偏差稳健估计方法。该算法分为两步:第1步,通过对相邻通道回波距离频谱的干涉相位进行相位解缠绕和加权多项式拟合,从而获得通道时延偏差的稳健估计;第2步,基于空间互相关理论,根据通道间常数干涉相位同时估计基带多普勒中心和通道间相位偏差。相比于传统算法,该算法克服了相位缠绕和跳变对系数估计的影响,提高了算法稳健性,而且能同时估计基带多普勒中心和通道相位偏差。实测及仿真数据处理验证了该算法的稳健性和精确性。     

一种去除电离层相位污染的方法

天波超视距雷达在传播过程中会受到电离层的相位干扰,这将导致信号频谱的展宽,电离层的相位污染影响了雷达的探测性能.介绍分析了一种简单有效的去除电离层相位污染的方法,并进行了仿真研究.结果表明,该方法具有稳健的去污染效果.     

多项式建模解电离层相位污染阶数选择新方法

电离层相位污染使天波超视距雷达杂波频谱展宽,影响舰船等低速目标检测.针对这一问题,近年来发展了基于分段多项式相位建模和高阶模糊函数的(HAF)解电离层污染算法,如何合理地选取模型阶数是该算法的核心.给出了两种改进的自适应多项式建模阶数选择方法.并利用仿真方法进行了验证,结果表明:基于高阶模糊函数变换性质的频域和时域阶数选择方法的计算量较现有算法有较大提高,且频域法可在较低信噪比下准确判断多项式阶数.     

修正自适应Chirplet分解法及其快速实现

为克服时频关系为线性的基函数的不足,该文提出一种新的信号分解算法修正自适应Chirplet分解法,将Chirplet基函数推广到三次相位信号的形式,因此可以逼近信号中的非线性时变结构成分。同时提出了一种快速分解算法,该算法通过计算信号的三次相位函数,可得到其能量分布集中于信号的瞬时频率变化率曲线上的结论,此时通过谱峰检测可同时获得基函数的二、三次相位系数,时间中心以及幅度的估计;进而通过解调频技术获得其初始频率和时间宽度的估计。文中给出了实现该方法的具体步骤,并分别以仿真信号和蝙蝠回声定位信号为例验证了该算法的有效性。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.