声频定向系统超声换能器频率特性及匹配

音频传输效率和音质问题一直是影响声频定向系统发展应用的主要因素.声频定向系统中需要对声频定向系统中的超声换能器进行频率特性分析及阻抗匹配,以达到最高的传输效率和最佳的音质效果.详细分析了超声换能器的频率特性及匹配方式,并对超声换换能器参数进行了测试,根据测试参数设计了阻抗匹配电路.理论分析和实验测试表明,良好的频率及阻抗匹配电路有利于优化超声波发射波形,提高音频传输效率和音质效果.     

压电超声换能器阻抗特性分析与匹配设计

压电超声换能器在不同的工作频率下具有不同的输入阻抗,当驱动信号源输出阻抗与换能器输入阻抗失配时会产生能量损耗,导致无法满足换能器的功率要求,从而使其光谱衍射效率降低,影响光谱成像质量。为此对换能器阻抗频率特性的深入研究,设计了一种新型宽带阻抗匹配网络。通过ADS仿真及匹配电路的测试,最终在115~180 MHz超声波频率内可使换能器的光谱衍射效率最高达70%。     

功率超声压电换能器阻抗匹配电路参数化设计

针对功率超声压电换能器,因工作环境变化和负载差异而导致匹配失调,及因匹配参数计算复杂而导致设计效率低、易出错的问题,在分析传统LC匹配电路的基础上设计了一种增加可调元件进行匹配失调补偿的改进型LC匹配电路,提出了一种功率超声压电换能器阻抗匹配电路的参数化设计方法,开发了相应的参数化设计软件,通过实验验证表明,该设计方法和软件为功率超声压电换能器匹配电路的设计提供了一种方便、实用、快捷、可靠的手段。     

AOTF-NIR宽带功率超声换能器阻抗匹配网络的设计与优化

随着近红外声光可调滤波器（Near Infrared Acousto-Optic Tunable Filter,AOTF-NIR）光谱成像技术在深空探测的广泛应用,超声换能器作为AOTF-NIR核心部件,对其工作带宽、光谱衍射效率及功率效率提出了更高的要求.超声换能器在不同频率下具有不同的输入阻抗,当驱动信号源输出阻抗与换能器输入阻抗失配时将会产生能量损耗,导致无法把功率最大限度的传递给换能器,从而使AOTF-NIR光谱衍射效率降低,影响光谱灵敏度.该文通过射频电路先进设计系统（Advanced Design System,ADS）仿真及实验测试,运用滤波器网络理论,采用LC无耗储能元件设计了一种带通型宽带匹配网络.最终在60-120MHz带宽范围内阻抗匹配网络的回波损耗S₁₁>-29.8dB,阻抗匹配网络功率效率达到90%以上.通过不断地微调优化匹配阻抗值及LC参数值,以此来提高光谱衍射效率,使光谱衍射效率最高达90%以上,提高了在620-1150nm波段内的光谱灵敏度及光谱成像清晰度.     

声频定向系统电声效率的提升方法和实验研究

压电陶瓷换能器是声频定向传输系统中的发声部件,以往的此类试验系统中,换能器和前级功放电路之间的阻抗匹配问题考虑较少,而阻抗失配会影响整个系统的工作效率,甚至造成功放和换能器的损毁。该文根据压电陶瓷换能器的电学特性,对声频定向传输系统中阻抗匹配对其电声效率的影响进行了研究,提出了该类系统的阻抗匹配理论方法,并通过实验对功放匹配电路的性能进行了测试。结果表明,利用该文所提方法可使距离系统3 m处的最大声压由58 dB增大到73 dB。     

超短波大变比阻抗变换器的研制

讨论了超短波大变比阻抗变换器的设计和制作.通过对频率范围、变比、插损以及功率容量的分析,结合铁氧体磁芯的频率特性,确定了电路的结构和参数.该器件采用低损耗镍锌铁氧体功率材料,应用于超短波功放模块中,起阻抗匹配作用,保证了系统功率传输的效率及可靠性.     

NIR-AOTF超声换能器频率特性的研究

随着短波近红外声光可调滤波器(NIR-AOTF)光谱成像分析仪在近红外光谱波段的广泛应用,对NIR-AOTF的光谱带宽及衍射效率提出了更高的要求。超声换能器作为NIR-AOTF的核心部件,其3dB工作带宽决定AOTF的光谱衍射范围,故改变铌酸锂各个镀膜厚度来提高换能器3dB损耗工作带宽。通过对换能器进行频率特性分析,得到换能器的损耗及阻抗频率特性,设计优化匹配网络,提高光谱衍射效率。     

Multisim 10在差动放大电路分析中的应用

在Multisim 10软件中,利用直流工作点分析、传递函数分析对典型差动放大电路的静态参数及动态参数进行仿真,并与真实值比较;利用参数扫描、温度扫描分析电路参数变化对输出波形的影响;利用瞬态分析和后处理器对实际电路难以观测的双端输出电压波形进行测试。研究表明,利用Multisim 10强大的分析功能对电子电路进行仿真测试,参数精确可靠,可以提高电路的设计和分析效率。     

多向复合超声换能器有限元分析与试验

超声换能器是微电子封装技术的核心执行元件,为解决传统一维纵振超声换能器键合效率低、键合面不均匀及键合点不牢靠等问题,采用ANSYS仿真软件建立换能器有限元模型进行模态分析及谐响应分析,设计了一种可同时实现轴向纵振、水平弯振及竖直俯仰振动的40 kHz多向复合夹心压电式超声换能器。其中,压电部分由整圆环和可单独激励的1/4圆环陶瓷片组成。利用阻抗分析仪实物测试,得到换能器纵振、弯振及俯仰振动的阻抗 频率特性曲线。结果表明,测试值与仿真值基本一致,且结构性能参数均符合键合要求,验证了该结构的合理性。     

基于谐波调谐的双频高效功率放大器设计

为了满足无线通信系统对低功耗双频功放的需求,分析高效功放的阻抗条件,提出了一种新型双频输出匹配电路,包括谐波控制电路和基波匹配电路两部分.首先,通过调谐晶体管的谐波阻抗减小漏极电压和漏极电流波形的重叠,从而提高功放的效率;其次,通过公式推导得出双频阻抗匹配电路参数,将晶体管在两个频率下的最佳基波阻抗匹配至50Ω.为验证...     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.