飞秒激光作用ZnSe晶体产生和探测THz辐射的实验

实验研究了ZnSe单晶的光学整流THz产生,借助电光取样技术得到THz脉冲的时域波形和FFT频谱分布,观察到约113fs的THz辐射场分布,及相应约5.8THz的频谱分布,辐射峰位于3THz左右.对比研究了不同表面的ZnSe晶体的THz辐射峰值强度随激发光功率的变化,通过轻微烧蚀模型定性解释了高激发功率下THz信号的饱和机制.     

用飞秒激光触发GaAs光电导体产生THz电磁波的研究

报道了用半绝缘GaAs材料研制的光电导偶极天线在飞秒激光脉冲触发下辐射THz电磁波的实验结果.GaAs光电导偶极芯片的两个欧姆接触电极间隙为3mm,采用Si3N4薄膜绝缘保护,在540V直流偏置下被波长800nm,脉宽14fs,重复频率75MHz,平均功率130mW的飞秒激光脉冲触发时产生THz电磁波.用电光取样测量得到了THz电磁脉冲的时域波形和频谱分布.THz电磁波的辐射峰值位于0.5THz左右,频谱宽度大于2THz,脉冲宽度约为1ps.     

用飞秒激光触发GaAs光电导体产生THz电磁波的研究

报道了用半绝缘GaAs材料研制的光电导偶极天线在飞秒激光脉冲触发下辐射THz电磁波的实验结果.GaAs光电导偶极芯片的两个欧姆接触电极间隙为3mm,采用Si3N4薄膜绝缘保护,在540V直流偏置下被波长800nm,脉宽14fs,重复频率75MHz,平均功率130mW的飞秒激光脉冲触发时产生THz电磁波.用电光取样测量得到了THz电磁脉冲的时域波形和频谱分布.THz电磁波的辐射峰值位于0.5THz左右,频谱宽度大于2THz,脉冲宽度约为1ps.     

碲-熔剂方法生长ZnTe单晶的太赫兹辐射及探测

通过Te熔剂方法生长出<110>晶向的ZnTe单晶,利用X射线衍射(XRD)及拉曼光谱对该材料进行了测试.详细研究了太赫兹时域光谱系统中该ZnTe单晶作为激发和探测晶体的辐射和探测特性.结果表明在钛-宝石激光器的泵浦下,Te熔剂方法生长的<110>晶向的ZnTe晶体表现出良好的THz辐射性能,室温下激发频谱可达3THz以上.     

THz时域频谱技术中若干效应的研究

在电磁波谱中所处的特殊位置使得THz波在物理、化学、生物医学、电子科学、材料科学、环境监测等领域有着广泛的应用前景。讨论了THz时域频谱技术的若干关键问题：THz发射晶体的双光子吸收、衍射效应和非线性效应（Kerr效应和类Kerr效应）等对THz产生效率的影响,THz辐射脉冲的载波包络相位差,THz小波变换频谱技术,以及利用光子晶体光纤飞秒激光作为激发源对THz时域频谱系统进行小型化和提高能量的方案。     

太赫兹频段一维介质光子晶体中的史密斯-帕塞尔辐射特性模拟

基于Smith-Purcell(SP)效应,采用粒子模拟的方法探讨了电子束团激发一维介质光子晶体中的SP辐射特性.模拟研究了单个束团激发一维介质圆柱光子晶体产生的SP辐射现象,并对周期束团激发的THz频段的相干SP辐射进行了模拟分析.研究表明,提高介质的相对介电常数和增加光子晶体的层数都可使辐射强度增加,选择合适的参数能够有效地增强THz频段的相干SP辐射强度.     

大间隙GaAs光导天线的太赫兹辐射频谱特性

从麦克斯韦方程出发,采用电涌模型对用飞秒激光触发大间隙光导天线产生的太赫兹脉冲远场辐射特性进行研究。文章分析了大间隙GaAs光电导天线的天线电极形状和参数、天线间隙对产生的THz脉冲频谱特性的影响。用制作不同间隙、天线形状的光导天线进行产生THz辐射的实验,仿真实验结果表明:大间隙光导天线的带宽为0.1 THz～2 THz,不同的电极形状主要影响1 THz～2 THz频段内的THz信号幅值;间隙更小的光导天线的频谱带宽稍宽,而且在1 THz以上的高频段信号略高一些。     

基于光抽运-太赫兹探测技术的ZnSe纳米薄膜的光致载流子动力学特性

利用光抽运-太赫兹探测技术,研究了ZnSe纳米 薄膜的载流子弛豫过程和太赫兹波段 电导率的时间演化过程。通过监测THz探测脉冲的变化,系统地研究了ZnSe纳米晶在光激发 载流子诱导下的瞬态光电导特性,并用Drude-Smith模型对瞬态电导率进行了拟合。在400 nm 的激光脉冲激励下,太赫兹脉冲的负透过率呈现出超快的上升和双指数衰减现象。时间常数 为5ps的快速衰减过程主要由ZnSe纳米晶界面缺陷处的光载流子后向散射控制,而时间常数 大于1ns的慢衰减过程主要是由载流子从导带到价带的复合引起的。瞬态电导率随时间的演 化表明,ZnSe纳米材料是制备超快THz开关的很好的备选材料。     

单面金属波导太赫兹量子级联激光器的天线模型

太赫兹(THz)量子级联激光器(QCL)是理想的固态THz源,其出射光束的远场特性是THz QCL研究中重要的一部分。实验上,THz QCL的远场光斑常呈多瓣或环形结构,用一般的衍射理论难以解释,为此把激光器看成辐射天线,利用电磁场理论,推导了单面金属波导THz QCL辐射远场场分布和光强分布基本公式。对具有典型参数的THz QCL的远场分布进行了计算。数值结果表明：辐射远场光强分布是不对称的环形结构,且随着激光器的腔长变长,环逐渐变密。可见,THz QCL的天线模型给出了与实验观察一致的结果,说明天线模型更适合于THz QCL远场光束的分析。     

基于双温耦合模型的太赫兹晶体损伤阈值分析

飞秒激光通过非线性光学整流效应产生太赫兹(THz)波时,THz波转换效率会随着飞秒激光功 率的增大而明显提高。然而,飞秒激光功率过高会造成非线性晶体损伤,进而影响THz波的 产生及输出, 因而对飞秒激光作用下非线性晶体的损伤阈值进行研究具有重要意义。本文在经典的双温模 型基础上,引 入电子激发、载流子吸收等电离过程的影响,建立了飞秒激光作用下非线性THz晶体损伤 阈值的预估模 型。采用有限差分法,数值模拟了飞秒激光辐照下THz晶体的温度场变化,并据此对 晶体损伤阈值进行 预估。在此基础上,分析比较了LiNbO₃、ZnTe和ZnSe 3种THz晶体的损伤 阈值随激光脉宽的变化规 律。结果表明,晶体的禁带宽度和比热容越大 ,晶体的损伤 阈值就越大;LiNbO₃晶体因其具有更高的损伤阈值,在产生高功率THz波方面 具有更大的优势。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-