Keystone变换实现方法研究

在传统PD雷达里,当相干积累时间较长或信号带宽很大、目标运动速度很高时,回波会出现越距离单元走动,从而影响雷达探测目标的性能.Keystone变换是校正脉冲回波距离走动的常用方法.本文详细研究了Keystone变换的三种常用实现方法,对它们的运算量作了比较,指出Chirp-Z变换能较好地满足系统实时性的要求.仿真分析和...     

Keystone变换实现方法研究

在传统PD雷达中,当相干积累时间较长或信号带宽很大,目标运动速度很高时,回波会出现越距离单元走动,从而影响雷达探测目标的性能。Keystone变换是校正脉冲回波距离走动的常用方法。在此研究了Keystone变换的3种常用实现方法,通过仿真分析验证了算法的有效性,找出了低复杂度算法,对工程实现具有一定的参考意义。     

一种多载频MIMO雷达高速运动目标多维参数估计方法

 多载频MIMO雷达中,高速运动目标回波信号经通道分离后各通道的距离和多普勒频率均不在同一分辨单元,无法利用传统的超分辨算法对目标距离、角度等参数进行估计.本文根据目标回波特点提出一种基于级联Keystone变换的高速运动目标参数估计方法.该方法先在快时间维利用Keystone变换校正距离走动,再在慢时间维进行Keystone变换校正多普勒走动,最后用MUSIC算法进行距离、方位和俯仰等参数估计.仿真结果表明了所提方法的可行性和有效性.     

基于分段伪Keystone变换的快速旋转目标检测

 对于高距离分辨雷达,快速复杂运动目标在相参积累时间内出现的越距离单元走动给检测与识别带来极大的困难.本文针对快速旋转目标越距离单元走动的问题,提出了一种新的分段伪Keystone变换方法,对越距离单元走动进行校正.该方法首先将数据按一定准则分段,每段数据用伪Keystone变换处理,校正目标的越距离单元走动,然后将每段数据"拼接"在一起,完成整个观测时间的距离像对齐,并在此基础上实现积累时间内的相参检测.采用离散匹配傅里叶变换实现了该变换的快速算法,仿真实验验证了算法的有效性.     

基于最大图像清晰度的泛探雷达目标距离-多普勒走动校正

泛探雷达长时间的相干积累会增加目标二维走动，导致目标在距离多普勒域散焦，回波信噪比降低。有效的目标二维走动校正才能更好地体现泛探雷达的凝视特性，提升雷达目标检测性能。文中利用Keystone变换进行距离维走动校正，并建立多普勒维走动和图像清晰度的数学关系式，基于最大图像清晰度准则进行多普勒维的走动校正。该方法解决了凝视探测下的二维走动，提高目标在多普勒维的高分辨，同时提升了微弱目标检测能力。     

机载雷达高速空中微弱动目标检测新方法

该文分析了机载雷达高速微弱空中动目标检测问题,指出直接对总回波数据进行Keystone变换校正存在多普勒模糊的动目标的距离走动时,会导致杂波脊展宽、杂波自由度增加从而降低STAP性能。为了解决这一问题,该文提出了一种新方法,该方法首先进行杂波抑制,然后利用Keystone变换校正目标距离走动,最后对目标距离走动校正后的数据进行常规空时2维波束形成实现目标积累,从而避免目标与杂波模糊数不同时,直接对回波数据进行Keystone变换校正动目标距离走动的同时影响杂波分布特性进而降低STAP性能的问题。仿真结果证明了该方法的有效性。     

一种径向匀加速目标包络徙动补偿新方法

雷达信号多脉冲长时间积累是提高雷达检测性能的重要手段。当雷达探测高速运动目标时,目标的径向加速度将引起二次距离走动,使雷达检测性能大大降低。针对此问题,提出一种消除距离走动二阶项的新方法。该方法首先对目标回波进行广义二阶Keystone变换,然后在慢时间域通过解线调的思路估计多普勒调频斜率,进而补偿多普勒高阶项,最后对补偿后信号再进行广义二阶Keystone变换,从而完全消除距离走动。仿真结果证明了该方法的有效性。     

基于Keystone变换的高速扩展目标检测

高速扩展目标在雷达多脉冲观测期间容易发生跨距离单元走动,由此导致常规的检测方法不能有效检测目标。针对这一问题,提出了一种基于Keystone变换的多脉冲扩展目标检测器,导出了相应的理论最优检测性能的解析表达式。在此基础上,对Keystone变换前后的目标检测性能以及基于Keystone变换的理论最优检测性能进行了比较研究,并分析了目标径向尺度、运动速度对Keystone变换的处理增益的影响。研究结果表明,对于强散射单元较少的高速目标,Keystone变换可以显著地改善目标的检测性能。     

一种天基预警雷达目标运动参数估计方法

天基预警雷达系统中,由于卫星平台和目标间存在高速径向运动,回波信号会产生距离徙动和多普勒走动,导致FFT相参积累增益降低,不利于微弱目标检测。为了提高检测性能,需要准确估计出目标的运动参数,并对回波信号进行运动补偿。首先建立了目标回波模型,分析了回波距离徙动和多普勒走动特性;其次利用Keystone变换校正回波距离徙动,并通过对多普勒模糊数的广义最大似然估计和MTD处理估计出目标的径向速度;然后对校正后的回波信号在方位向作延迟自相关处理,再利用FFT和Jacobson校正算法估计出目标的径向加速度;最后通过仿真实验验证了本文算法的有效性。     

基于线性拟合的包络走动补偿方法

在低信噪比情况下,信号长时间能量积累是检测目标的一种手段。对于长时间能量积累,系统往往面临3个问题,即距离走动、多普勒漂移、波束跨越。信号处理时,必须首先把所有目标回波包络都校正到同一距离单元上,然后利用动目标检测(MTD)或者联合时频变换等方法来完成回波能量积累和检测。通常Keystone变换是完成距离走动补偿的一种有效方法,但其计算量较大,实时性差。提出了一种基于线性拟合的距离走动补偿算法,利用曲线拟合的思想来完成包络走动补偿,仿真结果验证了该方法的有效性,同时表明其具有更好的实时处理性能。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.