计算机识别藏文音节构件的方法研究

藏文音节构件识别是藏文信息处理应当特别关注的一个问题,要实现藏文排序、藏文拉丁转写、藏文文本校对等工作就必须先识别出构成藏文音节的7大构件。针对符合藏文字性组织法构件组合规则的藏文音节,依据藏文字性组织法规定的音节组合规则和组合结构,提出先确定藏文音节中作为核心构件的基字,再依据基字判断出其他构件的算法,结合此算法对藏文中出现的其他特殊音节进行了特殊的构件识别处理。通过测试验证算法的可行性,测试结果表明,该算法能够正确识别符合组合规则和结构的藏文音节,对特殊音节也有较好的识别能力。     

拉丁藏文字转写成UNICODE藏文字的算法研究

文中对拉丁藏文字和传统藏文字结构进行了分析,建立了271个藏文字部件库和相应对照库,根据对照库和拉丁藏文字的特点,提出了拉丁藏文字转换为传统藏文字的算法,该算法简化了拉丁字母与Unicode藏文字母之间的转换过程,降低了算法复杂度。试验表明除了藏文梵文外,对现代藏文字的转换准确率达到了100%。     

应用Gabor小波和支持向量机的纹理分类

针对现有纹理分类算法的局限性,提出了一种基于Gabor小波和支持向量机的纹理分类算法.首先提取纹理Gabor分解后各子带的均值和方差作为特征向量,进而利用支持向量机算法实现分类.实验结果表明,与传统的分类方法相比,Gabor小波和支持向量机相结合能有效地提高分类正确率.     

基于特征值分解的中心支持向量机算法

针对广义特征值中心支持向量机(GEPSVM)训练和决策过程不一致问题,该文提出一类改进的基于特征值分解的中心支持向量机,简称为IGEPSVM。首先针对二分类问题提出了基于特征值分解的中心支持向量机,然后基于一类对余类策略将其推广到多类分类问题。将GEPSVM求解广义特征值问题转化为求解标准特征值问题,降低了计算复杂度。引入了一个新的参数,可以调节模型的性能,提高了GEPSVM的分类精度。提出了基于IGEPSVM的多类分类算法。实验结果表明,与GEPSVM算法相比较,IGEPSVM不仅提高了分类精度,而且缩短了训练时间。     

基于小波分解和支持向量机的准正面人脸识别方法

基于小波分解提取人脸特征技术和多分类支持向量机模型，提出了一种新的准正面人脸识别算法。小波分解提取人脸特征具有对表情变化不敏感的特点；支持向量机作为分类器被认为具有很高的推广(generalization)性能，无需先验知识。在所提出的算法中，首先对训练图像进行预处理，然后使用小波分解方法对人脸图像进行特征提取，用所提取的人脸特征向量训练多分类支持向量机模型，最后用训练好的支持向量机进行人脸识别。利用ORL人脸图像库对该算法的实验测试结果，以及与其它人脸识别方法的比较结果表明了该算法在识别性能方面的优越性。     

基于贪婪树的外部支持向量机近似重复图像聚类算法

准确地检测出近似重复图像对于冗余去除和版权侵犯检测具有重要的意义。为了改善基于均匀分裂外部支持向量机聚类算法的性能,提出了一种结合贪婪树和外部支持向量机的近似重复图像聚类算法。该方法先利用外部支持向量机将数据集聚为两类,然后采用贪婪树生长算法选择“最优”的类进行分解,重复上述过程直到不可分为止。此外,为了克服图像视觉单词的同义性问题,利用概率潜在语义分析模型将同现的图像视觉单词映射到潜在语义空间中的同一方向上。实验结果表明,与内部支持向量聚类算法和基于均匀分裂的外部支持向量机聚类算法相比,该方法在聚类性能方面有了明显的提高。。      

基于相关向量机的高光谱影像混合像元分解

 提出了一种利用相关向量机后验概率进行高光谱影像混合像元分解的方法.基于支持向量机后验概率输出的高光谱影像混合像元分解方法中,类别后验概率需要通过带参数的S形函数近似,而且模型需要通过交叉验证获取较好的规则化系数.相关向量机是在贝叶斯框架下提出的更加稀疏的学习机器,它没有规则化系数,核函数不需要满足Mercer条件.本文从分析支持向量机用于高光谱影像混合像元分解存在的不足出发,介绍了稀疏贝叶斯分类模型和模型参数推断,采用了快速序列稀疏贝叶斯学习算法.通过PHI影像的混合像元分解实验分析,表明了基于相关向量机的高光谱影像混合像元分解方法的优势.     

基于NMF和LS-SVM的肖像漫画生成算法研究

提出一种基于非负矩阵分解(NMF)和最小二乘支持向量机(LS-SVM)的肖像漫画生成算法.在训练阶段,利用非负矩阵分解来对夸张特征空间数据降维,运用最小二乘支持向量机(LS-SVM)统计学习夸张漫画与人脸之间的关系,建立形状夸张模型.在应用阶段,利用AAM算法提取人脸特征点,形状夸张模型计算出相应的漫画特征点数据,经过图像变形和风格化即可得到最终的肖像漫画.算法实验表明,该算法可以合理地夸张主要特征并避免过度变形.     

基于VHDL的一个简单Mealy状态机

以帮助理解Mealy状态机为目的,采用VHDL语言设计一个简单的Mealy状态机,来检测数据流"1101010",并采用软件QuartusⅡ对所写程序进行编译、仿真,得出其状态图、波形图.首先介绍状态机的基本概念及其分类,其次分析Mealy状态机的设计过程并编写程序,最后通过QuartusⅡ对编写软件编译、仿真,使所得到的状态图和波形图合理,并与分析完全一致.这里编写的程序简单、合理,容易理解,可以对Mealy状态机有一个更全面的认识.     

基于互信息波段选择和经验模态分解的高精度高光谱数据分类

在遥感数据处理研究中,高维高光谱数据的冗余信息和噪声严重影响高光谱数据的分类精度,针对此问题提出基于互信息波段选择和经验模态分解的高精度高光谱数据分类算法(MI-EMD-SVM).分别采用基于互信息波段选择方法和经验模态分解实现对高光谱数据的冗余信息处理和特征提取,并获得处理后的高光谱数据X'.采用支持向量机分类算法...     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.