一种改变交叉耦合极性的新方法

提出了一种用传输线在微带交叉滤波器和腔体交叉滤波器中实现交叉耦合极性改变的新方法。在微带交叉耦合滤波器中运用180°电长度的传输线实现源与非相邻谐振器的耦合,可使交叉耦合极性由容性变为感性。在腔体交叉耦合滤波器中,使用180°左右电长度的传输线,可使传输零点从阻带高端移动到阻带低端。讨论了不同电长度的传输线对交叉耦合的影响,通过调节传输线的电长度,控制传输零点的位置,提高滤波器的带外抑制。这种改变耦合极性的方法,可以用同一耦合方式获得任意位置的传输零点,给滤波器设计提供了更大的自由度。     

宽阻带三模谐振器微带带通滤波器设计

介绍了一种新颖的微带三模谐振器,由该谐振器构成的微带滤波器具有较宽的通带以及较好的带外抑制。对传统的单模微带环形谐振器结构进行优化,使谐振器在通带内具有三个谐振点,并且在通带边缘有四个对称衰减极点。引入的阶梯阻抗谐振单元使得微带三模谐振器具有良好的带外抑制。依据传输线原理对宽阻带三模谐振器进行了分析,并完成了中心频率为1090 MHz的宽阻带带通滤波器设计和加工,其实际测试结果与软件仿真结果具有良好的一致性。     

基于反向耦合线的超宽阻带带阻滤波器

提出了一种全新的超宽阻带带阻滤波器结构。该结构由一段加载开路传输线的反向耦合传输线和一对开路传输线并联构成。理论分析表明,通过适当设置电路参数,该滤波器可以产生多个传输零点,构成一个具有高选择性高抑制性的宽带带阻滤波器。通过改变滤波器中的电路参数,特别是其中传输线的特征阻抗,可以灵活地调整滤波器的阻带带宽、阻带衰减和通带性能。基于这一理论,设计了一种宽带带阻滤波器。测试结果表明,该滤波器不仅可以提供109.40%的20dB相对阻带带宽和过渡尖锐的阻带,更可以提供高达105.73%的25dB相对阻带带宽。     

基于谐振器慢波传输线的小型化宽阻带谐波抑制功分器

该文提出一种基于谐振器慢波传输线的小型化宽阻带谐波抑制功分器,该谐振器慢波传输线由矩形谐振器、T型谐振器和蛇形线构成,来取代功分器中的1/4波长传统微带传输线。所设计制作的功分器,其尺寸仅为传统微带功分器的37.4%。实验结果表明,该功分器回波损耗大于10 dB的带宽范围为0.1～1.19 GHz,在2.2～11.05 GHz频率范围内衰减大于20 dB,具有较宽的阻带从而具有抑制谐波效果。仿真和测试结果较为吻合,验证了所提设计方法的有效性。     

基于耦合线加载开路枝节的宽带带阻滤波器设计

基于单端接地耦合线结合微带传输线加载开路枝节,提出了一款宽带带阻滤波器。该滤波器由输入输出端的单端接地耦合线并联微带传输线上加载三个开路枝节组成。采用奇偶模理论分析、传输线模型和结构模型仿真优化,对滤波器的特性开展了研究。实物加工测试结果与仿真结果的一致性好,验证了所设计的宽带带阻滤波器。该滤波器的阻带中心频率为2 GHz, 3 dB衰减带宽为98%(1.19～3.15 GHz),20 dB衰减带宽为84.5%(1.24～2.93 GHz),阻带带内抑制大于35 dB,结构紧凑,可与航电系统设备板级电路集成,用于电磁干扰防护。     

一个紧凑型超宽带微带带通滤波器

设计制作了一种紧凑型超宽带微带带通滤波器。该滤波器采用两对由1/4波长型SIR谐振器和1/4波长终端短路谐振器构成的枝节线对与微带低通滤波器相联而成。在ADS软件上对该滤波器进行仿真验证,然后制作实物。结果表明,该滤波器相对带宽达到112%,阻带带宽超过4 GHz,通带范围内插入损耗小于1 d B,回波损耗大于10 d B,阻带范围回波损耗大于20 d B;滤波器尺寸为14.22 mm×9.65 mm。     

一种新型小型化宽阻带低通滤波器设计

对基于阶梯阻抗加载发卡型谐振器的多级椭圆函数微带滤波器进行了讨论.通过把两个谐振器用等效于电感的细微带线连接起来构成二级低通滤波器,其在阻带带宽和阻带衰减方面与单谐振器滤波器相比,取得了非常明显的改善.新设计滤波器的3dB截止频率位于2GHz,在2.5～25GHz具有小于10dB的衰减,而滤波器的面积仅等效于0.081λg×0.096λg(λg是在截止频率2GHz的导波波长),证明了此种谐振器在多级滤波器设计中的有效性.此外,为更好地理解此种滤波器工作原理,文中对单谐振单元滤波器的LC等效电路进行了提取.与其它微带低通滤波器相比,此种滤波器在小型化、宽阻带方面具有明显优势,可广泛应用于多种微波系统.     

微带交叉耦合滤波器的简化设计

主要研究微带交叉耦合滤波器的简化设计。通过约束传输零点之间的关系,简化了带通滤波器交差耦合的拓扑结构,同时又较好保持了带通滤波器带外的抑制能力。在利用微带结构实现时,采用了谐振器顺序耦合的结构,降低了滤波器微调的难度。同时在第一和第四谐振器间增加一段传输线以引入交叉耦合,通过调整引入传输线的位置等可调整相应传输零点的位置,增加了滤波器设计的灵活性。仿真结果验证了相关方法的有效性。     

一种小型化带通滤波微带巴伦设计

提出一种小型化带通滤波微带巴伦的设计.在Marchand巴伦的基础上,使用一个半波长和两个1/4波长传输线作为谐振器,在带通滤波微带巴伦的两个输出端口可以获得相同幅度和相反相位的平衡信号.利用谐振器平行线耦合可以观察到通带两侧存在两个传输零点.对提出的中心工作频率在2.65 GHz的带通滤波微带巴伦进行了实物加工与测试...     

基于分形CRLH-TL加载短截线超宽带滤波器设计

传统基于微带缝隙和逆开环谐振器(CSRRs)的复合左右手传输线的带宽较窄、通带内反射损耗较大,限制了其应用。因此,该文采用了Minkowski分形的微带缝隙代替传统微带缝隙,有效地展宽了带宽,并通过在微带缝隙两侧加载短截线的方式进一步增加了带宽并改善了高频端带外抑制特性。分析了结构的尺寸参数对其传输特性的影响,并根据S参数计算了色散曲线、提出了等效电路模型。最后,运用所提出的方法设计了一款超宽带带通滤波器。该滤波器仅采用一个复合左右手(CRLH)结构单元,获得了超带宽2.1~9GHz(相对带宽124.3%)和较小的带内反射损耗(小于0.8dB),同时滤波器在9.5~12GHz的阻带范围内传输抑制大于20dB。测量结果、仿真结果与等效电路结果基本吻合,验证了该设计方法的有效性。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.