基于直接面积等效法的逆变电源

正目前,变频技术已经广泛地应用于电机调速和变频控制中,而SPWM波的产生和控制则是变频技术的核心之一。采用模拟电路技术生成SPWM的方法电路复杂,精度较差。现在普遍使用专用模块、DSP或FPGA生成SPWM波,不过成本较高。也有文献提出了PIC单片机的逆变电源的设计方法,但是不能完成实时变频。在这里给出一种采用PIC18F2431,利用直接面积等效法实现单相正弦变频电源的方法。     

基于SPWM控制的三相逆变电源设计

叙述了一种基于STC15单片机设计的SPWM三相逆变电源。正弦波脉宽调制(SPWM)技术能够实时、准确地实现变频控制要求,且逆变器输出电压谐波分量少。采用STC15单片机内部PWM寄存器模式输出三路相位差为120°的SPWM波,使用IR2109作为三相全桥电路驱动芯片,输出经过LC低通滤波,最后在负载上得到稳定的正弦波交流电。实现表明三相逆变电源可以输出完整的正玄波,且输出电流大于2安培,电压大于60V,具有广泛的应用前景。     

基于CORDIC算法的三相SPWM发生器设计

采用SPWM的三相逆变技术在调速传动、电源转换和电力电子控制领域均有着广泛的应用,为提高三相SPWM产生的效率和精度,在此设计了一种不对称规则采样的三相SPWM发生器。调制正弦信号采用改进型迭代算法CORDIC产生,相对于查表法,无需占用大量的存储器空间,利用等腰三角波与调制正弦波相比较的不规则采样,得到SPWM的输出信号,并于QuartusⅡ编译环境下采用Verilog HDL硬件描述语言实现模块化编程设计,进行波形仿真验证了该设计的高效性和高精度性。该设计适用于高精度的三相逆变系统,也可与其他模块相结合应用于各种三相电机的正弦驱动等场合。     

基于DSP的三相变频SPWM波形算法研究

本文介绍了一种高效的SPWM变频调速的控制新算法,通过DSP的运算实时改变PWM波占空比,通过逆变电路得到正弦变化的三相交流电,并应用于伺服控制系统中,该算法简洁高效,实用性强,能够很容易应用于工程实践中。     

用DSP56F80x实现三相SPWM波形发生器

文章介绍了SPWM控制的基本原理及用DSP56F80x生成三相SPWM波形的软件设计 ,最后用PCMaster观察变量波形。     

正弦脉宽调制(SPWM)算法技术的研究

常用脉宽调制算法有方波PWM技术和正弦波PWM技术,正弦波PWM(SPWM)主要应用于要求有较高精度正弦波输出的逆变电源中.主要针对常用的SPWM算法进行讨论,介绍了四种根据SPWM技术等效原理形成正弦脉宽调制(SPWM)的算法技术,两种改进型的SPWM算法,对各种算法的性能进行比较并给出结论.     

一种新型数字SPWM信号的设计与实现

为了有效地降低逆变器负载的谐波,并且防止同一桥臂的功率放大管出现直通现象,设计了一种基于FPGA的新型数字SPWM波形产生方案.结合直接数字频率合成技术,在FPGA内部采用硬件描述语言生成数字的正弦波和三角波,然后采用了比较的方法直接产生所需要的SPWM波形.创新性为运用了数字正弦波或三角波的平移技术产生所要求的死区,最后提出了数字方法产生SPWM波形的几个技术难点的解决方法.     

基于TMS320F2812的三相SPWM波的实现

针对SPWM波调制在逆变变频电源中的广泛应用,介绍了采用高性能数字信号处理器(DSP)TMS320F2812的片内外设事件管理器的功能生成三相SPWM波的方法,给出了整个程序流程图,主要功能程序源码和实验结果.该方法采用不对称规则采样算法,程序实现主要采用查袁法.实验结果表明,该方法简既能满足一定控制精度要求,又能满足实时性要求,可以很好地控制115 V/400 Hz逆变电源的输出.     

一种新型可调三相变单相变频调压电源的设计

介绍了一种正弦波可调输出的逆变电源的设计。设计中采用了DC/DC和DC/AC电力电子技术,单片机SPWM调制控制技术。采用自带PWM波的PIC16F877单片机经过软件程序编程实现SPWM调制波实现逆变桥IGBT器件的控制,通过反馈电压控制占空比实现稳压。实验结果表明性能可靠。     

SVPWM电压源逆变器供电异步电动机的动态仿真

建立了三相异步电动机在d-q坐标系下的动态数学模型,并介绍了控制异步电动机运行的两种控制技术:正弦波脉宽调制(SPWM)技术和空间电压矢量脉宽调制(SVPWM)技术。在Matlab/Simulink环境下,分别建立SPWM和SVPWM电压源型逆变器供电的三相异步电动机的动态仿真模型,比较分析了在这两种控制方式下的仿真结果。结果表明,较之SPWM控制方式,SVPWM的异步电动机变频调速系统启动快,转矩脉动小,定子电流谐波小,具有较好的动态性能和稳态性能。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.