光子计数激光雷达时间-数字转换系统

时间测量系统在激光雷达中主要用于激光脉冲飞行时间的测量,其性能直接影响着激光雷达的各项指标.基于FPGA设计了一种应用于光子计数激光雷达的时间-数字转换(Time-to-Digital Converter,TDC)系统,利用延迟线内插在FPGA内部实现了高精度的时间测量,通过实验分析,研究了TDC系统的性能及其应用于光子计数激光雷达后的效果.实验结果表明,TDC系统的时间分辨率达到29 ps,测时精度37 ps,能够实现9通道的高精度事件计时功能,用于光子计数激光雷达后,整个激光雷达系统的测时精度为421 ps,达到6.3 cm的距离测量精度,能够实现高精度高分辨率的激光三维成像.     

一种用于GFSK信号解调的自校准时间数字转换器

设计了一种用于解调GFSK信号的时间数字转换器(Time Digital Converter,TDC),该时间数字转换器主要由延时链、D触发器、延时校准电路等组成.TDC对中频信号进行采样,将信息从频率信号转换到二进制码.延时校准电路保证延时单元的延时准确.TDC采用TSMC 0.18μm CMOS工艺实现,版图面积为0.08mm2.仿真结果表明,TDC的最大微分非线性为0.07LSB,最大积分非线性为-0.17LSB,功耗0.9mW,最大抗频率失调范围为±350kHz.     

一种新型无人机高分SAR 信号非均匀混合采样技术

无人机高分辨合成孔径雷达(SAR)系统具有较大的信号频率带宽,根据奈奎斯特采样定律,雷达接收机需要超高速采样的ADC芯片。由于超高速采样率的ADC芯片的采样量化位数较低、功耗较高、成本昂贵,直接采用超高速采样ADC芯片对无人机高分辨率SAR回波信号进行采样接收不是最优方法。文中提出一种新型的非均匀混合采样技术用于对无人机高分辨率SAR回波信号进行采样接收,通过优化无人机SAR系统的信号收发时序,利用325 Msps采样率的ADC芯片即可对频率带宽为2 GHz的雷达回波信号进行采样接收,保证雷达回波的相位扰动与旁瓣电平满足应用需求。仿真实验表明:2 GHz带宽的Ku-SAR系统的回波信号能被采样率为325 Msps的ADC芯片完好采样接收,成像分辨率优于0. 2 m,旁瓣电平控制在-13 dB以下。     

一种带有自适应增益控制的激光雷达模拟前端

为了处理宽动态范围的激光脉冲回波信号,设计了一种带有自适应增益控制技术的模拟前端。通过分段调节跨阻放大器的跨阻增益,实现了在1 μA~1 mA范围内输入电流与输出电压近似线性的关系。提出了自触发使能方法,可以在没有外部清零信号的情况下连续接收回波信号。提出了一种新型差分移位时刻鉴别电路,能有效减小行走误差。电路采用0.11 μm CMOS工艺设计,后仿真结果表明,-3 dB带宽为530 MHz,最大跨阻增益为103 dBΩ,等效输入噪声电流谱密度为6.47 pA·Hz-1/2@350 MHz,输入动态范围为60 dB,功耗小于100 mW。该模拟前端电路设计适用于飞行时间脉冲激光雷达。     

调频连续波相干激光雷达的多脉冲频域相干累积研究

针对相干激光雷达在低空、远距离、高动态目标探测等应用场景中存在的弱信号探测问题,基于调频连续波相干激光雷达,采用多脉冲频域相干累积方法提高激光雷达弱回波信号的信噪比。结合调频连续波理论,分析了信号幅度起伏和相位起伏对多脉冲频域相干累积信噪比效果的影响,实验结果表明,经过M脉冲周期的频域相干累积,微弱回波信号对数信噪比可提升10lg M dB,并且信号幅度起伏、相位起伏可导致多脉冲相干累积信噪比低于理想相干累积信噪比,对于均值分别为2.25×10^-4、1.65×10^-4和相对起伏幅度分别为0.69、0.93的回波信号而言,相位补偿后的回波信号在50脉冲周期内相干累积信噪比的误差因子最大为0.57%、0.3%,该多脉冲频域相干累积方法对相干激光雷达在远距离目标探测、微弱信号接收方面的应用具有重要意义。     

脉冲激光多回波峰值检测电路设计

在脉冲激光探测中，常采用峰值检测电路获取强度信息。当激光通过部分反射或部分遮挡的空间多层物体时，会产生多个回波。传统峰值检测电路无法准确探测多回波峰值。因此，基于脉冲多回波峰值检测原理，设计了一种具有高集成度的新型脉冲多回波峰值检测电路芯片。该芯片以两级峰值采样保持电路结构为基础，通过采用交织采样和多路复用技术优化了电路结构，实现了对多回波信号的峰值检测。芯片采用CMOS 0.18μm工艺设计，面积约为2.6 mm×0.48 mm，测试结果表明，所设计的芯片能够有效检测幅值范围50～500 mV、脉宽5 ns的多回波信号，峰值输出电压的最大误差为4.8%，通道间的输出电压最大相对偏差为5.7%，具有更精细的多回波探测能力，可集成应用于脉冲激光探测系统。     

低功耗音频Δ-Σ D/A转换器

设计了一种适用于音频应用的16位D/A转换器.芯片集成了内插滤波器、Δ-Σ调制器和D类功放,可以独立完成带宽为8 kHz的音频数字信号到模拟信号的转换.内插滤波器完成64倍过采样并消除镜像信号,Δ-Σ调制器实现16位的转换精度.在驱动8 Ω负载时,D类功放实现97 dB的动态范围,最大输出功率达到100 mW,三次谐波小于-100 dB;同时,功率效率大于90%,特别适合低功耗应用领域.设计采用标准0.18 μm CMOS工艺,芯片面积约为2 μm×2 μm.     

低功耗音频Δ -∑ D／A转换器

设计了一种适用于音频应用的16位D/A转换器.芯片集成了内插滤波器、Δ-Σ调制器和D类功放,可以独立完成带宽为8 kHz的音频数字信号到模拟信号的转换.内插滤波器完成64倍过采样并消除镜像信号,Δ-Σ调制器实现16位的转换精度.在驱动8 Ω负载时,D类功放实现97 dB的动态范围,最大输出功率达到100 mW,三次谐波小于-100 dB;同时,功率效率大于90%,特别适合低功耗应用领域.设计采用标准0.18 μm CMOS工艺,芯片面积约为2 μm×2 μm.     

内嵌14位DAC的高速直接数字频率合成器的设计

利用CORDIC算法实现相位幅度的转换;嵌入双路归零编码方式输出、电流源控制开关、14位DAC,成功设计了一种高速直接数字频率合成器.经0.18 μm 6M2P CMOS工艺流片,芯片面积为4.19 mm×3.17 mm,在1 GHz的工作频率下,输出信号在98.6 MHz处,SFDR为68.39 dB.     

数字化脉冲激光引信探测系统设计与信号处理

针对以往模拟脉冲激光引信探测系统存在的测距误差较大的缺点,为进一步提高脉冲激光引信的测距精度,设计了一种数字化脉冲激光引信探测系统.该探测系统包括发射、接收和信号处理3部分,其中信号处理部分主要实现脉冲回波信号的高速实时采样与缓存、信噪比增强与时延估计.采用双通道ADC并行采样,实现了以200 MHz的等效采样频率对脉冲回波信号进行高速采样.当脉冲回波信号很微弱时,采用多脉冲相干平均算法提高了其信噪比,增强了对微弱回波信号的检测能力.通过最小二乘时延估计算法得到了回波时延,进而计算得到目标距离.测距实验结果表明:该探测系统测距精度较高,最大测距误差为0.25 m.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.