基于证据理论的雷达装备规划保障资源能力评估方法

规划保障资源是雷达装备综合保障工作的重要内容,其质量直接制约雷达装备保障性指标.本文提出一种基于D-S证据理论的评估方法,通过对证据间冲突程度的计算能很好地分析各指标间的相互支持、相互协调程度,该方法可对雷达装备规划保障资源能力做出合理的评判.     

基于缺陷数据的雷达软件失效模式分析与应用

基于雷达软件缺陷历史数据开展失效模式分析与应用研究。首先,结合雷达软件特点与失效机理,构建失效数据模型;然后,在失效数据模型基础上,阐述雷达软件失效模式分析与应用方法,以及相应的算法原理;最后,开展工程实例研究,获取适用于雷达软件的典型失效模式。实例结果表明:文中所提出的方法可有效提升雷达软件失效分析的效率和质量,避免相似问题重复发生,保障雷达软件质量满足系统要求。     

基于两级证据合成的海上辐射源目标识别方法

在通用的D-S证据理论目标识别模型基础上,以海上电子侦察行动为背景,提出了一种基于两级证据合成的辐射源目标识别方法.在辐射源信号数据库和综合情报数据库的支持下,该方法分别采用灰关联法和综合分析法对辐射源信号和装备平台进行概率赋值,通过证据合成公式计算得到识别结果,实现从信号到设备、从设备到平台的两级识别目的.研究表明,该方法简单易行,有利于提高识别结果的准确性.     

基于HLA的装备保障全要素集成模拟训练系统设计

为提高装备保障训练效果,从装备保障全要素集成训练需求出发,设计了装备保障全要素集成模拟训练系统功能层次结构,设立了三种训练模式,合理区分了训练层次。基于HLA设计了模拟训练系统的体系结构,并提出了系统软件设计总体方案。最后系统阐述了装备保障全要素模拟集成训练系统的工作流程。该模拟训练系统可为装备装备保障全要素集成训练提供训练平台支撑。     

基于备件短缺数的舰载机修理级别分析

修理级别分析(LORA)是舰载机保障性分析的重要内容,对舰载机全系统、全寿命保障具有重要的意义。现有的LORA分析模型对装备使命任务、作战使用和保障体系考虑不够全面,不能全面确定舰载机维修级别决策,影响装备的作战使用与保障体系决策。基于此,提出基于备件期望短缺数(EBO)的LORA分析模型。首先,分析了舰载机的维修保障模式;其次,结合舰载机保障实际建立了EBO的多级保障模型;再次,给出了基于EBO的优化分析模型;最后,结合实例对基于EBO的LORA问题进行了应用分析。     

装备质量与综合保障技术综述

针对我军装备建设和发展所采用的传统序贯式模式易导致装备不能发挥有效的战斗力、保障费用高、保障困难等问题,提出了装备综合保障的概念,强调了装备综合保障设计应与装备立项、研制、生产及使用全过程同步以提高装备质量.     

基于虚拟仪器技术仿真开发武器装备监测保障系统

分析我军武器装备技术保障的现状与发展历程,就如何保障装备完好率与高可靠性、高可维修性提出了问题,探讨了虚拟仪器硬件平台的体系结构、软件组成、各项功能,介绍了基于虚拟仪器技术仿真开发装备检测仪器的设计思想,就开发实例阐述了该类系统的实现方法.     

工程装备保障数据仓库分析与设计

为实现工程装备精细管理、精确保障和科学决策,提出了适合工程装备保障的数据仓库解决方案,重点阐述了工程装备保障数据仓库的体系结构及其设计步骤方法,并介绍了其基于OLAP的前端应用,为提高工程装备保障水平提供了新的思路和方法。     

基于仿真的军用电路板故障诊断系统研究

由于传统的军用电子装备故障诊断所需故障信息荻取困难,且系统建立周期较长,因而提出建立一种基于仿真的电路板故障诊断系统来解决这些问题.该系统以智能测试和故障诊断技术作为研究对象,分析了在智能故障诊断系统中门到的故障模式分析、电路仿真、特征提取和故障定位等技术.重点研究了关键技术中的系统内部接口问题.     

基于案例的推理在导航装备故障案例库系统中的应用

在分析了基于案例推理的基本原理基础上,结合导航装备故障维修的实际情况,提出了基于案例推理的导航装备故障案例库系统的总体框架设计和案例推理运行流程.研究和开发实用、可靠、高效的导航装备故障案例库系统,对于导航装备的维修和保障具有重要意义.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm