大气无线光通信系统中数字脉冲间隔调制研究

基于光强闪烁的大气无线光通信系统模型,研究了数字脉冲间隔调制(DPIM)方式的差错性能,分析了符号结构、发射功率、带宽需求等问题,并与 OOK(开关键控)和 PPM(脉冲位置调制)调制方式进行比较。理论和仿真研究结果表明,DPIM 调制方式较 PPM 方式有较高的功率效率和较少的带宽需求,特别是在系统实现上相对于 PPM 大大简化。因此 DPIM 应用于无线光通信系统具有一定优势。     

可见光通信调制方式及其性能研究

为了实现白光LED室内照明以及通信的双重功能,根据可见光通信的特点,在分析开关键控调制(OOK)、脉冲位置调制(PPM)、数字脉冲间隔调制(DPIM)以及双头脉冲间隔调制(DH-PIM)结构的基础上,提出一种新型反向双头脉冲间隔调制(RDH-PIM)方式。分析比较了各种调制方式的编码结构、带宽需求以及平均发射功率,推导了系统误时隙率表达式。仿真结果表明,OOK具有最小的带宽需求,RDH-PIM可以获得最大的平均发射功率,且带宽利用率明显优于PPM和DPIM。作为一种折中的调制方式,RDH-PIM在无线光通信中有一定的应用价值。     

无线光通信中的定长双幅度脉冲间隔调制

在无线光通信中,为解决脉冲位置调制(PPM)需要符号同步和数字脉冲间隔调制(DPIM)符号长度不同定造成调制器等待或缓冲器溢出的问题,提出了一种新的调制方式--定长双幅度脉冲间隔凋制(FDAPIM),分析了它的符号结构、发射功率、带宽需求以及在高斯白噪声的差错性能,并和开关键控(OOK)、脉冲位置调制(PPM)、数字脉冲间隔调制(DPIM)、定长数字脉冲间隔调制(FDPIM)等调制方式进行了比较.理论分析与仿真结果表明,FDAPIM的误包率劣于PPM和DPIM,接近于FDPIM,但明显优于OOK.虽然FDAPIM的带宽要求较高,但其带宽效率和功率效率都优于FDPIM,且不需要符号同步,相对于PPM系统,实现的复杂性大大简化;相对于DPIM,其符号长度固定,不会引起调制器等待或缓冲器溢出.因此FDAPIM应用于无线光通信系统具有一定优势.     

基于FPGA平台紫外通信系统的调制技术研究

基于紫外通信系统平台对应用于移动通信和光移动通信的调制方式开关键控(OOK)、脉冲位置键控(PPM),以及新兴的差分脉冲位置键控(DPPM),数字脉冲间隔调制(DPIM)进行了性能仿真,以OOK为基准,比较了四种调制方式的平均发射功率和需求带宽参数;同时对OOK、PPM和DPPM的调制解调方式进行改进和实现,无需进行字...     

弱湍流信道中的调制技术

基于弱湍流的无线光通信系统信道模型,对开关键控(OOK)、脉冲位置调制(PPM)、差分脉冲位置调(DPPM)、数字脉冲间隔调制(DPIM)和双头脉冲间隔凋制(DH-PIM)调制方式的符号结构、发射功率、传输带宽以及误包率进行了理论推导和对比分析.结果表明,PPM必须需要符号同步和时隙同步,而 DPIM、DPPM、DH-PIM 调制只要求时隙同步.OOK的平均发射功率最大,PPM的平均发射功率最小,DH-PIM比OOK小但是比DPIM 和DPPM大,DPIM发射功率特性略优小于DPPM.当M=6时与OOK调制平均发射功率比较,PPM调制节约功率约15 dB,DPPM和DPIM调制节约功率约12 dB,当a=2时DH-DPIM调制节约功率约10 dB.OOK带宽需求最小,PPM带宽需求最大,DPIM的带宽特件略大于DPPM,DH-PIM带宽需求大于OOK但小于DPPM.当M=6时与OOK带宽比较,PPM带宽需求约为OOK的11倍,DPPM和DPIM的带宽需求约为OOK的6倍,当a=2时DH-DPIM带宽需求为OOK的3倍.在相同平均背景光子和相同平均光脉冲接收光子的条件下 PPM、DPIM、DPPM、DH-PIM和OOK调制方式的误包率依次增大.     

一种新型的无线光通信调制方法

针对脉冲位置调制(PPM)和数字脉冲间隔调制(DPIM)等方法存在的问题,提出了一种新的双宽脉冲位置调制(DD-PPM)方式.在给出其符号结构的基础上,分析了带宽需求、传输容量和平均功率,推导出弱湍流信道下的误包率模型,并将其与开关键控调制(OOK),PPM和DPIM等典型调制方式进行了比较.理论分析和仿真结果表明,DD-PPM不仅比OOK具有更高的功率利用率和更好的差错性能,比PPM具有更高的带宽效率和传输容量,比DPIM具有相近甚至略好的差错性能,而且因符号长度固定,解调时不存在等待或缓存器溢出等问题,较DPIM更易工程实现.因而作为一种折中的调制方式,DD-PPM在无线光通信中有一定的应用场合.     

紫外光通信调制方式的对比研究

紫外光非视距通信是一种新型的无线光通讯形式,近年来受到各军事强国越来越广泛的关注。详细分析了启闭键控调制(OOK)、脉冲位置调制(PPM)、差分脉冲位置调制(DPPM)和数字脉冲间隔调制(DPIM)的编码结构,然后从带宽需求、平均发射功率、传输容量和差错性能等方面对各种调制方式进行了仿真对比。结果表明,DPIM调制比PPM具有更高的传输容量和更少的带宽需求,并且解调对同步要求较低,实现更简易,并结合紫外LED阵列将作为今后实用化紫外光源的发展趋势,DPIM调制在未来紫外光通信系统的应用中将具有更大的优势。     

紫外光通信脉冲位置索引调制

在紫外光通信中,应当充分考虑带宽需求、差错性能的平衡问题。针对该问题,基于DPIM提出了一种脉冲位置索引调制(Pulse Position Index Modulation)方式,详细描述了调制结构,分析了带宽需求、传输容量和差错性能,并与其他几种调制方式进行了比较。理论分析和仿真结果表明:PPIM的差错性能比OOK、DAPIM、DAPPM、FDAPIM更优,仅劣于DPIM;但其带宽效率优于DPIM、DAPPM、FDAPIM,劣于DAPIM和OOK。PPIM能实现性能方面较好的平衡,在紫外光通信系统中具有一定的应用前景。     

无线光通信双幅度脉冲位置调制

无线光通信脉冲位置调制(PPM)的功率利用率虽然很高,但带宽需求也非常高,在无线光通信系统中,应当充分考虑带宽需求和功率利用率的平衡问题.针对该问题,提出了一种新的双幅度脉冲位置调制(DAPPM).在给出了其符号结构之后,分析了其带宽利用率.然后,推导了弱湍流信道模型下DAPPM的误时隙率和误包率,并与OOK、PPM、DPIM和DAPIM等调制方式进行了比较.结果表明,在相同的位分辨率条件下,DAPPM的误包率虽然高于PPM和DPIM,但明显优于OOK和DAPIM.同时,DAPPM去除了PPM中冗余的时隙,且平均长度比DPIM短,从而获得了比DPIM更高的带宽利用率.     

无线光DH-PIM与DPIM调制方式的性能研究

为了解决目前无线光通信采用的调制方式误包率大、传信率低等问题,研究了双头脉冲间隔调制(DH-PIM)和数字脉冲间隔调制(DPIM)的性能。分析了DPIM和DH-PIM两种调制方式的符号结构,比较了二者的传信率以及给定模型下的误包率。仿真与分析结果表明,DH-PIM的传信率较高,适合于实时性要求较高的传输系统,而DPIM的平均发射功率低,误包率较小,适合于要求低功率或高可靠性的系统。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.