单电压控制的电润湿显示阵列的制备与研究

文章介绍了利用匀胶机甩Teflon薄膜作为疏水亲油介质的方法制备电润湿显示的工艺,在此基础上,通过引入光刻工艺,选用SU-8负胶作为光刻胶,获得了具有良好的油滴浸润性的电润湿显示阵列。实验中获得的显示阵列具有良好的油滴浸润性,油滴在各个显示单元上覆盖全面,小电压时就开始收缩,电压加到30V时,油滴基本上收缩到角落,并且有良好的重复性,有望应用于下一代的显示器件。     

一种新型基于电润湿的受光反射型显示单元

利用电润湿原理制备了一种新型受光反射型显示单元。利用具有良好黏合性、疏水性和耐油性的PDMS(聚二甲基硅氧烷)材料,研制了结构精简的反射型显示单元,成功地控制了显示单元中油滴的扩张与收缩,实现了像素单元对比度的变化。     

电润湿的研究进展

介绍了电润湿的研究背景以及基本理论和基于电润湿的单层结构彩色显示和三层结构彩色显示的基本原理.将电润湿显示的能耗、性能表现、色彩等与其他显示技术进行了比较,可以看到电润湿显示具有低能耗,相应时间快,色彩丰富等特点.它被认为是未来可能被广泛应用的显示技术之一.介绍了电润湿在其他方面的应用和所面对的困难与前景.     

电润湿显示单元研究

在ITO导电玻璃上沉积了SiO2作为绝缘层,以聚四氟乙烯(Teflon AF1600)薄膜作为亲油疏水层,环氧树脂作为围堰材料,制备了基于电润湿原理的显示单元.通过施加电压成功地控制了显示单元中油滴的扩张和收缩.SiO2绝缘层的引入有效地减小了显示单元的工作电压,在11V左右油滴开始收缩,显示单元产生对比度的变化.由于SiO2绝缘层良好的绝缘性,有效地减小了漏电流,工作电压增大到30 V显示单元仍然正常工作,表现出良好的重复性.为电润湿技术在显示领域的应用做了初步的探索.     

掺钕钛酸铋铁电陶瓷靶的研制

用添加晶种的方法制备了掺钕钛酸铋(BNT)铁电陶瓷靶材。通过XRD及SEM研究了烧结工艺对铁电陶瓷BNT晶相结构的影响,用RT66型铁电测试仪测定铁电材料BNT的电滞回线。结果表明,采用在800℃预烧、保温2h,1100℃烧结、保温12h的烧成工艺,所得的BNT铁电陶瓷具有良好的c轴取向,具有较好电滞回线(Pr-Ec)。在应用电压为5V,测试频率为1MHz下,BNT铁电陶瓷的剩余极化强度(Pr)及矫顽场强(Ec)可分别达到2.2×10–6C/cm2和5×103V/cm。     

电润湿电子纸多灰度动态显示驱动系统设计与实现

为了解决电润湿电子纸显示器存在的视频闪烁、电荷泄露问题以及实现电润湿多灰度动态显示,本文针对电润湿电子纸显示器研究设计了一套驱动系统。首先,根据完整的电润湿电子纸驱动系统必须具备的功能,提出了嵌入式+现场可编程门阵列(FPGA)的驱动系统架构,其中嵌入式平台可以对视频源进行实时图像处理,FPGA根据接收到的处理后的数据进行相应的时序控制。接着,采用现有电泳电子纸的源栅驱动芯片作为电润湿电子纸的驱动芯片。最后,本文提出了不等子帧和复位帧的概念用以解决视频闪烁和电荷泄露问题从而更好地实现多灰度显示。实验结果表明:该驱动系统成功解决了电润湿视频闪烁、电荷泄露以及多灰度显示等问题,使电润湿电子纸的视频刷新率达到30 Hz,像素最高灰度可以达到16灰阶并且在该灰度下的电润湿反射率接近60%。整个驱动系统基本满足了多灰度动态显示。     

新型电润湿显示技术及应用

1 前言 电润湿显示是一种近年来新出现的显示技术,具有双稳态显示、反射性好、功耗低和温度范围宽的特点.     

基于纳米金属光栅结构的新型电润湿显示单元的研究

纳米金属光栅的透射光谱对临近材料折射率变化非常敏感,可以通过改变介质折射率实现可调的彩色滤光,将双层纳米金属光栅应用于显示装置上具有工艺制备简单、色度和对比度高等特点.采用纳米金属光栅结构,通过严格耦合波理论模拟和表面等离子体共振原理设计了一种新型的透射式电润湿显示器件.在650 nm周期、空气环境下,通过数值优化在690 nm波长处得到了50％的单色透射,而在水溶液的环境下,由于共振移动到红外,可以实现黑态显示,从而验证了灰度的可调.该研究将为轻薄、节能和高分辨率的新型电浸润显示器件设计提供全新思路.     

矩阵寻址铁电液晶显示器

研制了矩阵寻址铁电液晶显示器 (FL CD) ,像素为 12 8× 12 8,像素大小为 0 .2 75 nm× 0 .2 75 nm,像素间隔为 2 0 μm,显示区对角线尺寸为 5 .3cm。它具有良好的记忆特性 ,像素对比度 6 5∶ 1,帧速为 2 6Hz。在自行研制的电源驱动下可脱离计算机和联机显示文字和图像。     

Liquavista新型全彩显示器向量产迈进步伐

在《现代显示》的2007年第11期中,我们向各位读者介绍了Liquavista专利电润湿技术的显示器平台这项新技术。这种电润湿显示器利用了绝缘膜能够在电压控制下从疏水性转变为亲水性的特性。面板内部由透明电极、绝缘膜、着     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-