面向椭圆曲线密码的处理器并行体系结构研究与设计

在研究椭圆曲线密码算法的处理特征以及有限域层上的并行调度算法基础上,采用指令级并行和数据级并行方法,提出了面向椭圆曲线密码的并行处理器体系结构模型,并就模型的存储结构进行了分析。基于该模型实现了一款验证原型,在FPGA上成功进行了验证测试并在0.18μm CMOS工艺标准单元库下进行逻辑综合以及布局布线。实验证明提出的并行处理器体系结构既能保证椭圆曲线密码算法应用的灵活性,又能够达到较高的性能。     

素数域上椭圆曲线密码体制的软件实现

椭圆曲线密码体制已成为公钥密码研究的主流。介绍了椭圆曲线密码体制的一些数学理论基础,对算法的基础模块进行了说明,讨论了软件实现素数域上椭圆曲线密码算法的一种方法,在DSP6205,主频200MHz的环境下,192比特的ECDSA签名速率70次/秒,验证速率60次/秒。最后对椭圆曲线加密体制的研究与实现进行了全面总结,给出了所完成的工作,对椭圆曲线密码体制的应用前景提出了展望。     

GF（2^m）域高速椭圆曲线加密处理器设计

针对高速椭圆曲线加密应用的要求,设计了一种多项式基表示的有限域GF(2m)上的高速椭圆加密处理器.为提高运算速度,点加和倍点模块并行运算,且分别采用全并行结构实现;为减少资源,初始化和最后的坐标变换求逆模块通过优化分解成一系列乘和加运算,合并在一个模块中用串行结构实现.Xilinx公司的VirtexEXCV2600 FPGA硬件实现结果表明,完成有限域GF(2163)上任意椭圆曲线上的一次点乘的全部运算时间消耗约为31.6μs,适合高速椭圆曲线加密应用的要求.     

基于ARM的线阵CCD测量系统应用分析

介绍了一种基于LPC2106的线阵CCD测量系统，其中应用了ARM微处理器，系统主要包括：线阵CCD传感器、模数转换器、ARM微处理器、显示模块及控制电路等几部分．阐述了线阵CCD的光采集工作原理和驱动脉冲的产生原理，以及ARM芯片LPC2106的软硬件设计和系统其他模块的具体操作．     

ECC密码技术及其优越性

椭圆曲线密码体制是近年来兴起的一种性能优良的公钥密码体制，本文介绍了椭圆曲线密码体制的有关概念和基本理论，将它与其它公钥密码体制进行了比较，阐述了椭圆曲线密码体制的优越性。     

SM2高速双域 Montgomery 模乘的硬件设计

作为由国家密码管理局公布的SM2椭圆曲线公钥密码算法的核心运算,模乘的实现好坏直接决定着整个密码芯片性能的优劣．Montgomery模乘算法是目前最高效也是应用最为广泛的一种模乘算法．本文基于Mont-gomery模乘算法,设计了一种高速,且支持双域（GF（p）素数域和GF（2m ）二进制域）的Montgomery模乘器．提出了新的实现结构,以及一种新型的W allace树乘法单元．通过对模块合理的安排和复用,本设计极大的缩小了时间消耗与硬件需求,节省了大量的资源．实现256位双域模乘仅需0．34μs ．     

一种基于Normal基椭圆曲线密码芯片的设计

文章设计了一款椭圆曲线密码芯片。实现了GF（2^233）域上normal基椭圆曲线数字签名和认证。并支持椭圆曲线参数的用户配置。在VLSI的实现上，提出了一种新的可支持GF（2^233）域和GF（p）域并行运算的normal基椭圆曲线VLSI架构。其架构解决了以往GF（p）CA算迟后于GF（2^233）域运算的问题，从而提高了整个芯片的运算吞吐率。基于SMIC 0．18μm最坏的工艺，综合后关键路径最大时延3．8ns，面积18mm^2；考虑布局布线的影响，芯片的典型的情况下，每秒可实现8000次签名或4500次认证。     

参数可选的高速椭圆曲线密码专用芯片的VLSI实现

研究了椭圆曲线密码体制的VLSI实现问题。从点乘运算层与群运算层调度到有限域上的高速运算方法等方面给出了一些提高椭圆曲线上点乘运算的新方案；提出了一种域与曲线参数可选择的高速椭圆曲线密码专用芯片VLSI新结构。基于0．6mm单元库，芯片面积约为36mm2。综合后仿真结果表明：设计芯片能够有效地完成数字签名与身份验证完整流程，在20MHz下平均每次签名时间为62．67ms,高于目前报道的其它同类芯片。     

一种基于椭圆曲线的流水线实现方法

提出了一种基于椭圆曲线的流水线实现方法,来解决串行计算的效率低下问题.通过分析椭圆曲线密码运算的数据相关性,在不增加模乘器面积的前提下,采用三级流水线,提高了椭圆曲线密码的运算速度,并给出适用于椭圆曲线密码VLSI设计的流水线的实现流程.     

一种改进的椭圆曲线密码实现算法

椭圆曲线密码系统(ECC)与其他公钥体制相比,是迄今为止每比特具有最高安全强度的密码系统.椭圆曲线密码的算法研究的一个方向是进一步减少算法的运算量,以便于该算法在实际环境中应用.椭圆曲线上的倍点和数乘运算是椭圆曲线中核心运算,该文通过对计算过程的深入研究,推导了直接计算2mP,m≠1的公式,并从理论上分析直接计算所节省的计算量.进而对椭圆曲线密码的快速实现算法进行了相应的改进,所提出的新算法的性能随着直接计算2mP,m≠1中m的增大而提高,在极限情况下性能可比原算法提高30%,具有较大的应用价值.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-