毫米波扩展互作用振荡器的起振特性研究（英文）

为克服高欧姆损耗对发展毫米波频率的扩展互作用振荡器(EIO)的限制,本文开展了对于阶梯型射频电路的振荡起始特性研究。通过PIC仿真模拟、定量计算和理论分析,本文证明了一个被设计和制作的W波段EIO具有大幅度降低振荡启动电流的可能性。通过对间隙数、腔体尺寸、场分布、工作电压和表面损耗五个方面的优化,在电子注电压为17.5k V时,该EIO的振荡起始电流可降至0.43A。根据冷测实验结果,本文还对输出功率衰减进行了分析和预测。     

8 mm径向扩展互作用振荡器

提出并研究了一种具有结构紧凑、散热性好、输出功率大等特点的新型扩展互作用结构——径向扩展互作用振荡器(EIO),并推导了小信号理论.利用电磁仿真软件分析了径向EIO高频结构中的谐振特性与场分布,并采用三维粒子模拟软件开展了注波互作用研究.研究结果表明在工作电压为5 k V,电流为8.48 A时,所设计的径向EIO输出功率达到2.6 k W,热腔工作频率为30.011 GHz,效率为6.1%.     

基于圆盘加载波导的THz 分布作用振荡器的模拟研究

提出了一种新型的基于圆盘加载波导的THz 分布作用振荡管（Extended-Interaction Oscillator, EIO）,它由圆盘加载波导输入谐振腔、漂移段和输出腔三部分组成。利用2.5 维电磁仿真软件－UNIPIC 对其进行模拟研究。研究表明慢波结构的长度、漂移管的长度和输出管的高度对输出功率和频率产生显著影响。经过最优化设计,在注电压为27.7 kV,电流为20 mA 的条件下,仿真得出其中心频率为730.86 GHz ,峰值功率为442.1 mW 的THz 波。     

150mW光输出的半导体激光器

三洋制造的150mW 光输出半导体激光器,输出波长为800～870nm,室温连续使用寿命5000小时,它的发光层与电流通过区段之间具有减少光吸收达到高功率输出和高可靠工作的最佳间隙,其振荡保持单纯横向模状态。激光器刻面有一电流阻塞区,用以降低电流引起的温度上升,减少光吸收,防止激光器刻面的光学损坏。该激光器振荡起始电流170mA,     

磁控注入电子枪低频振荡分析

电子枪低频振荡对电子注速度零散有很大的影响。本文对磁控注入电子枪中低频振荡现象进行了分析。通过理论分析简述了电子枪中低频振荡的形成过程以及束缚电子对电子枪区空间电势的影响。利用PIC(粒子模拟)编程分析了电子注电流对低频振荡的影响。提出了通过改变绝热压缩区的磁场分布,达到抑制低频振荡的目的。     

回旋行波管分布式介质加载高频结构研究

利用线性理论对Ka波段工作模式为TE01模的回旋行波管进行了稳定性分析,计算了介质加载条件下工作和寄生模式的传播损耗,以及不同传播损耗下工作模式的起振电流;对不同介质加载条件和工作电流,给出了3个主要寄生模式的起振长度;确定了介质加载厚度以及相对介电常数等参数。计算结果表明,在优化得到的介质加载条件下,寄生模式在其各自振荡频点的单位长度传播损耗大于抑制各寄生模式返波振荡所需最低损耗值要求;工作模式起振电流大于设计所需工作电流;寄生模式的起振长度大于设计的介质加载段和未加载段长度;设计的介质加载参数能够满足抑制工作和寄生模式自激振荡的要求。利用优化设计的高频结构及介质加载参数,进行了整管热测实验,得到了输出功率160kW,饱和增益40dB,效率22.8%以及3dB带宽5%的回旋行波管。     

75千兆赫奥罗管(Orotron)振荡

本文讨论了奥罗管(一种产生或放大毫米波的电子管)的工作原理。文中提出了一种电子与该器件的开放式谐振腔内电磁场互作用并被群聚的工作原理。线性计算可以预计器件起始振荡所要求的电流。对于一个打算工作在75千兆赫的器件,理论预计其起始电流为34.5毫安,调谐跨导为0.31兆赫/伏。文章给出了根据理论计算结果而作的实验设计的细节。     

损耗介质加载结构Ka波段TE_(01)模回旋行波管放大器稳定性的分析

该文从分析损耗介质加载金属圆波导中电磁波传输特性出发,应用回旋行波管放大器小信号色散方程,研究损耗介质加载结构TE01模回旋行波管放大器绝对不稳定性振荡和回旋返波振荡对器件稳定性的影响.结果表明:损耗介质的加载,可以提高绝对不稳定性起振电流,提高的幅度依赖于工作磁场偏离饱和磁场的程度、电子束横纵速度比等;增加波导损耗介质加载的厚度,可以提高竞争模式的回旋返波起振长度.合理选择波导的损耗层厚度、介电常数以及回旋行波管的工作电压、工作磁场和电子束横纵速度比,可以有效兼顾带宽和抑制不稳定性,保证回旋行波管放大器稳定工作.     

损耗介质加载结构Ka波段TE01模回旋行波管放大器稳定性的分析

该文从分析损耗介质加载金属圆波导中电磁波传输特性出发,应用回旋行波管放大器小信号色散方程,研究损耗介质加载结构TE₀₁模回旋行波管放大器绝对不稳定性振荡和回旋返波振荡对器件稳定性的影响。结果表明：损耗介质的加载,可以提高绝对不稳定性起振电流,提高的幅度依赖于工作磁场偏离饱和磁场的程度、电子束横纵速度比等;增加波导损耗介质加载的厚度,可以提高竞争模式的回旋返波起振长度。合理选择波导的损耗层厚度、介电常数以及回旋行波管的工作电压、工作磁场和电子束横纵速度比,可以有效兼顾带宽和抑制不稳定性,保证回旋行波管放大器稳定工作。     

TE21模回旋返波振荡的起振分析

该文基于回旋行波放大器的线性理论,对TE₂₁模回旋返波振荡起振长度和起振频率随导引中心半径、电压、速度比、注电流及工作磁场等参数的变化进行了详细的数值模拟,并给出了相应的物理解释,分析了TE₂₁模基波和二次谐波回旋返波振荡特点,研究了分布损耗对回旋返波振荡的抑制效果。所得结果对回旋行波放大器和回旋返波振荡器的设计有参考意义。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.