红外焦平面阵列二元非线性的非均匀性理论模型

 非均匀性校正是红外焦平面阵列成像质量提高的关键,在现有一元线性理论模型局限下,红外焦平面阵列成像非均匀性校正难以获得校正精度的提高.本文通过红外焦平面阵列探测器成像机理及其成像过程理论分析,推导了影响探测器响应及其非均匀性的主要因素,首次建立了红外焦平面阵列二元非线性的非均匀性理论模型,通过实验测试及其统计分析验证了理论模型.该模型能在较宽红外辐射和环境温度范围内准确预测红外焦平面阵列响应曲线及其非均匀性,比原一元线性理论模型更全面准确地描述了红外成像非均匀性影响因素及探测器响应关系.     

红外焦平面阵列非线性响应仿真

通过对红外焦平面阵列非均匀性产生原因的分析和总结,考虑了红外焦平面阵列各探测元问的空间相关性,在空间无关的红外焦平面阵列非线性响应模型的基础上,建立了基于空间相关性的红外焦平面阵列响应模型.用以线性响应模型为基础的非均匀性两点校正法对仿真结果进行了初步验证,仿真结果表明:校正以后非均匀性明显下降,但仍剩余的非均匀性与红外焦平面阵列的理想化响应模型以及基于各探测元问是互相独立不相关假设下的非线性响应模型相比,基于空间相关性的红外焦平面阵列非线性响应模型更为科学、客观,也更接近真实的红外焦平面探测器成像.     

红外焦平面阵列非均匀性仿真技术研究

红外焦平面阵列非均匀性的建模和仿真,是红外成像系统仿真中很关键的一部分.根据红外焦平面阵列非均匀性产生的原因和特点,建立了基于空间相关性的探测器响应模型,较基于各探测元间是独立不相关假设下的响应模型更为科学客观.     

离子束刻蚀制作用于红外焦平面探测器的面阵石英微透镜

面阵红外焦平面结构由于具有体积小、重量轻、功耗低、噪声小、灵敏度和可靠性高等特点而在军事及民用领域获得了应用,国外已有文献报道填充系数为４０％左右的面阵红外焦平面凝视阵列的情况,国内也已制成了填充系数为３５％的面阵肖特基势垒红外焦平面阵列。红外焦平面阵列的红外响应均匀性及空间分辨率和灵敏度是衡量其性能优劣的几项重要指标。通常情况下,空间分辨率的提高可以采取缩小像素面积,增大阵列规模来实现,但像素的     

红外焦平面阵列非均匀性自适应校正算法研究进展

实现红外焦平面阵列非均匀性自适应校正是高级红外探测系统追求的重要目标,对提高红外探测系统的空间分辨率、温度分辨率、探测距离以及辐射量的正确度量具有重要意义.归纳总结了国内外关于凝视红外焦平面阵列非均匀性自适应校正算法的部分研究工作及其进展,比较了典型自适应算法的性能和适用条件,为进一步开展红外焦平面阵列非均匀性自适应校正研究提供参考意见.     

非制冷红外焦平面阵列信号处理系统设计

介绍了320×240非制冷红外焦平面阵列(UFPA)的信号处理系统;采用复杂可编程逻辑器件(FPGA)产生红外焦平面阵列的驱动时序,应用数字信号处理(DSP)技术实现红外焦平面阵列的非均匀校正.实验及仿真结果表明:FPGA可产生焦平面阵列所需时序,DSP对焦平面阵列的非均匀校正效果较好.     

基于环境温度的红外焦平面阵列非均匀性校正

分析了环境变化对红外焦平面阵列信号输出的影响,提出了一种基于环境温度和目标温度的非均匀性校正算法.利用UL01011凝视型红外探测器进行信号采集,根据最小二乘原理建立了焦平面探测单元的指数响应模型.最后,利用该模型进行非均匀性校正.实验表明,算法能在较宽的环境温度范围,准确预测焦平面探测单元的响应,有效提高了非均匀性校正的精度.     

非制冷红外焦平面阵列信号处理系统设计

介绍了320-240非制冷红外焦平面阵列（UFPA）的信号处理系统;采用复杂可编程逻辑器件（FPGA）产生红外焦平面阵列的驱动时序,应用数字信号处理（DSP）技术实现红外焦平面阵列的非均匀校正。实验及仿真结果表明：FPGA可产生焦平面阵列所需时序。DSP对焦平面阵列的非均匀校正效果较好。     

红外焦平面阵列非均匀性校正精度的研究

定标校正法是目前人们实际使用较多的一种红外焦平面阵列非均匀性校正方法。该方法采用的算法简单,易于用硬件实时实现,但也存在校正精度低的缺点,针对这一不足,首先通过实验得到了红外焦平面探测器的实际非线性响应曲线,然后在此基础上进一步分析了定标点的数量及选取对红外焦平面阵列非均匀性校正精度的影响,为提高定标校正法的校正精度提供了依据。     

利用CPLD实现红外焦平面阵列实时非均匀性校正

红外焦平面阵列响应的非均匀性严重限制了红外系统的成像质量,必须在使用时对其进行非均匀性校正.以两点校正方法为例,利用CPLD的高速性和灵活的可编程性,对红外焦平面阵列进行实时非均匀性校正.实验结果表明利用CPLD实现的红外焦平面阵列的非均匀性校正方法简单、效果理想.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.