一种小面积低功耗串行AES硬件加解密电路

通过分析AES算法的基本原理,对AES算法中的子模块SubBytes和Mixcolumns的硬件电路实现方法进行优化,提出一种新的key硬件电路实现方式,并在key的实现电路中采用低功耗设计.与目前的大多数实现电路相比,该电路可以有效减小芯片面积,降低电路功耗.采用串行AES加密/解密电路结构,经综合仿真后,芯片面积为8 054门,最高工作频率为77.4 MHz,对128位数据加密的速率为225 Mbps,解密速率达到183 Mbps,可满足目前大部分无线传感网络数据交换速率的需求.     

基于ARM安全摄像头设计

针对现有视频监控的信息安全问题,采用ARM Cortex-A8,USB摄像头,AES加密模块,以及可信计算芯片(TPM)设计了视频监控安全模块。用AES对视频采集端采集的视频数据进行加密,通过网络将密文传输到服务端。对于AES密钥的传输安全问题,以可信计算为基础,通过TPM的绑定功能进行非对称加密,采用对称密码和非对称密码配合使用的混合加密方案,实现对称密钥加密数据,非对称密钥加密对称密钥的加密功能。简要介绍了安全视频监控的组成,对AES加密算法和TPM加密做了阐述,最后通过实验验证加密解密。     

基于低成本FPGA的AES密码算法设计

主要介绍在逻辑资源少的现场可编程门阵列（FPGA）上实现高级数据加密标准（AES）算法设计。首先描述了AES加密算法,并在FPGA上优化实现AES算法,设计结构采用多轮加密共用一个轮运算的顺序结构,加密和解密模块共用密钥扩展模块,减少资源占用,在低时钟频率下保持较高的性能。采用了16位的并行总线通信接口,利用先进先出缓冲器（FIFO）对输入输出数据进行缓存。最后通过仿真和实测表明,在50MHz时钟下加解密速率可达530Mb/s。     

AES与ECC混合加密算法的无线数据通信系统设计

提出了一种新的无线数据通信数据加密算法。该算法利用高级加密标准AES加密数据，以ECC加密AES算法的密钥，并用ECC实现数字签名，无线数据系统的接收端对接收的信息进行相应的数据解密，得到原始数据。这样既能快速地进行数据加解密，又能很好地解决密钥分配问题，同时也能完成数字签名与验证功能，具有需求存储空间小、运算速度快、带宽需求低、密钥管理方便等优点，非常适合于无线通信网络环境下的数据加解密通信。     

Web信息管理系统数据库加密技术研究

为了提高Web信息管理系统数据库的安全性,建立一个数据库加密模型.该模型采用中闻件技术,将加密系统放在中间层.引入加/解密模块和安全认证模块,来保障数据库系统的安全.为了防止字典式攻击,用户登录验证模块采用了口令加盐技术.对Web信息系统袁单数据的加密使用了开源jQuery插件jCryption.Web数据库中的敏感数据由加密中间件完成加密和解密.加密中间件由加/解密引擎、密钥管理及数据库连接模块等组成.加密中间件的加密算法主要采用AES算法和RSA算法.AES主要用于加密数据,而RSA算法用于完成密钥的加密.该加密模型已在榆林学院工资查询系统上得到了应用,结果表明,该模型能够有效提高Web信息管理系统的安全性.     

AES密码算法的FPGA实现与仿真

通过对高级加密标准AES算法进行描述,给出了基于FPGA设计的具体设计流程和方法。采用多轮加密过程共用一个轮运算的顺序结构。由于文中的加密模块与解密模块采用相关且不同的初始密钥和不同的密钥扩展模块,结果加强了通信的安全性。采用16位并行总线数据结构,利用16位输入128输出的 FIFO 数据缓存器对输入数据进行缓存,从而完成数据的加解密。最后通过 ISE 13.1仿真验证了该算法设计的正确性。     

针对AES加密算法的研究及其FPGA实现

旨在对AES加密算法进行研究,并采用Nios Ⅱ CPU的SOPC集成实现方式,基于FPGA设计出了具有加解密功能的、密钥可配置的、资源利用和吞吐量都十分理想的SOPC加密系统.系统轮变换通过状态机进行控制,采用加密内部和解密外部的密钥扩展方式,大大提高了系统的实现速度.     

一种超小型AES专用处理器的FPGA实现

提出一种基于FPGA的专用处理器设计.它是用于高级加密标准的超小面积设计,支持密钥扩展(现在设计为128位密钥),加密和解密.这个设计采用了完全的8位数据路径宽度,创新的字节替换电路和乘累加器结构,在最小规模的Xilinx Spartan II FPGA芯片XC2S15上实现了一个高级加密标准AES的专用处理器,使用了不到60%的资源.当时钟为70MHz时,可以达到平均加密解密吞吐量2.1Mb/s.主要应用在把低资源占用,低功耗作优先考虑的场合.     

基于AES加密算法的1.25Gb/sEPON下行加密研究

介绍了AES-128算法的加、解密原理,从明文和密钥角度分析了AES加密算法的雪崩效应,提出了增量式密钥更新方法,通过在新旧密钥加密的密文之间插入密钥更新符,引导接收端无缝切换密钥。重点研究AES-128加密算法在1.25Gb/s EPON中的应用,通过FPGA和SFP光收发模块搭建实验平台,实现EPON物理层下行数据的加密、解密和密钥更新功能,保证了EPON下行通道数据的安全性。     

基于硬件控制器的乱序执行抗差分功耗攻击AES芯片

本文描述了一款通过硬件控制器实现乱序执行以抵抗差分功耗攻击（DPA）的AES 芯片。 该芯片实现了高级加密标准（AES）中规定的加密和解密算法。芯片采用细粒度数据流结构, 动态发掘了算法中的字节粒度操作的并发性。文章提出了一个新颖的电路,暂存-匹配-转发 单元（HMF）,作为乱序执行的基本控制结构,将并行的操作以乱序的方式执行。该芯片已 在中芯国际（SMIC）180 纳米工艺下流片。功能测试的结果表明,128 位密钥长度下加密一 组明文的平均功耗为19nJ,裸片面积为0.43mm2。芯片抗功耗攻击的能力通过一个实际攻击 平台进行了评估。实际测试结果表明,在乱序执行情况下,在64000 条样本功耗曲线下无法 识别正确密钥。和确定操作顺序的情况相比,本文提出的通过硬件控制器实现乱序执行的方 法将破解成本至少提高21 倍。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.