多重技术助业务流程管理系统实现

企业业务流程管理系统存在诸多问题,通过采用SOA架构、制定规范、建立虚拟用户视图等技术,可以构建支持业务流程全生命周期的系统平台。根据咨询机构Gartner对业务流程管理(Business Process Management,BPM)的定义,BPM早期主要指对业务流程端到端的管理,通过相关技术以端到端的方式处理业务事件和管理必要的资源。如今BPM涵盖了对整个业务流程环境的治理,可以定义为一种基于相应的方法、策略、度量标准、管理实践以及软件工具,对组织的活动和流程进行管理和持续优化的结构化方法。     

以数据为中心的业务流程变更自适应技术研究

为了应对不同的客户需求和相关政策的变化,企业需要经常对业务流程进行局部修改.因此,企业亟需业务流程变更自适应系统对可自适应的变更快速做出响应,自动修改业务流程定义,动态地适应变更内容,产生满足需求的流程定义.本文在以数据为中心的业务流程模型上,引入了版本信息、流程方向图,提出了一种业务流程变更自适应模型并设计了具有变更自适应性的业务流程系统.在该模型的基础上,提出业务流程动态修改方法和变更自适应方法,给出了验证方法判断本次变更能否由系统自适应完成,并对满足条件的变更进行流程定义自适应和动态实例自适应处理.     

密集干扰环境下相控阵雷达资源管理优化研究

首先定义了多假目标干扰效果评估的三项指标,然后深入分析了有源多假目标干扰对相控阵雷达的任务调度和资源管理系统的干扰效果,在此基础上提出了相控阵雷达抗干扰的任务调度和资源管理优化方法,包括雷达任务合并、谨慎启用失踪处理,尤其是在确认和跟踪事件中不起始新航迹.最后利用相干视频信号仿真进行了验证.结果表明,改进后的方法可以有效提高相控阵雷达抗多假目标干扰能力.     

基于软件流水线的并行多源视频处理

针对多源、复杂视频处理存在的实时性低,资源占用率高的问题,提出了一种基于软件流水线并行处理多源视频的方法,具有降低视频处理应用的设计难度,优化计算资源使用,提高复杂算法多源视频处理的实时性的特点.首先基于多核CPU构建多任务管理系统,用于任务缓存及调度,并管理资源负载,在此基础上设计软件流水线.软件流水线的每一个stage将对于一帧视频图像的处理封装成任务的形式提交给多任务管理系统调度执行.最后,将软件流水线用于多源视频处理,并行处理6路视频,试验结果表明该方法能够有效提升多源、复杂视频处理的实时性,且在资源利用率,负载均衡等方面具有良好特性.     

指标模型服务的研究与设计

指标模型服务(iModel)是对信息化企业进行业务角色分析、业务流程分析、关键性能指标评价等一系列业务分析之后,抽取出来的可以为企业创造价值的不同层次的业务活动或功能,这些业务活动或功能可以作为一种可重用的资源。本文主要围绕信息化企业,阐述指标模型服务的内涵及任务,深入研究了指标模型服务的功能及相关业务,重点设计出指标模型服务的整体框架、业务处理流程、抽取-转换-加载(ETL)数据写入流程。可以帮助企业优化业务处理流程,提高信息化业务工作效率,符合当前信息化时代发展需求。     

广电企业业务流程的分析和优化

介绍了广电网络业务流程的整体结构,对目前广电业务流程的评价指标体系进行了分析,提出了以流程时间、流程速率、工作队列等组成广电网络业务流程的实例--业务流程的评价指标,以及基于Little法则的广电网络业务流程评价指标体系曲简化方法.研究了采用时间Petri网建模对企业业务流程分析的方法和分析优化步骤,并针对广电网络业务流程的具体业务流程给出的实际案例进行了分析.     

企业变革中的业务流程分析与优化

作为企业管理重要组成部分,业务流程管理借助持续地分析业务流程运转质量,不断地优化业务流程,为企业的变革提供强大的支持。本文总结了支持企业变革的业务流程分析和优化的基本方法,并进一步说明实践中借助业务流程管理平台进行业务流程分析和快速优化的方法。该方法的核心在于多角度地分析和优化流程,识别并减少无增值的流程,识别关键的衔接,迅速建立新的业务流程,有效地支持企业变革。文章在最后进一步展望了业务流程管理与企业变革结合的新方向：快速流程变革。     

多传感器资源的非平等博弈分配

空战M4系统需要在同一时间段对多个目标执行多种任务,因此,系统多传感器资源必须向子任务进行分配;同时,各子任务又具有不同的优先权和紧迫度。利用非平等博弈理论,建立多传感器资源的非平等博弈分配模型和分配算法,可以合理有效地解决多传感器管理方案的优化问题。仿真结果验证了该方法的有效性。     

基于代价模型的多平台分析任务流调度优化

分析任务流的调度是人们关注的热点问题之一.在无法提前得知各子任务资源和时间开销以及算子间传输开销的情况下,现有研究缺少较好的调度方法,也无法很好地处理多平台环境下的任务调度.为此,本文提出了一种基于启发式规则优化的拓扑调度算法.该算法通过对同平台任务和后继任务优先选择的规则,对任务流调度顺序进行优化;其次,结合Spark平台下数据分析任务常见的SQL算子和机器学习算子的代价模型,有效对任务的开销做出估计.实验表明,调度优化算法能有效节约时间开销和内存开销,代价模型的估计也较为准确.     

一种改进的网格资源配置算法的研究与设计

网格资源优化配置问题是一个NP问题,遗传算法可以有效地解决这类问题.针对基本遗传算法收敛速度慢的不足,提出一种改进的遗传算法.该算法通过产生符合条件的初始种群和保护优秀个体的交叉策略,提高了算法的搜索能力和收敛速度.提出的算法综合考虑了资源任务的通信代价、任务执行时间和资源利用率等参数;并结合网格资源的特点,将所有资源统一描述和对待,扩展了资源的概念,具有实际应用意义.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.