基于场景的国产红外探测器非均匀性校正方法

基于场景的红外探测器非均匀性校正方法可以弥补基于黑体辐射定标的非均匀性校正方法存在的缺陷,目前许多公开发表的场景校正算法比较复杂,难于硬件和工程化实现。探索了一种基于帧间图像配准的场景校正算法,针对国产640×512中波制冷型红外探测器存在的非均匀性应用该算法进行了校正实验。实验结果表明该算法校正效果明显,为基于场景的非均匀性校正算法的工程化应用提供了一种新思路。     

微偏振片阵列成像的非均匀校正研究

针对传统的非均匀校正算法难以校正偏振成像的非均匀问题，提出了一种新的矩阵校正算法。分析了偏振成像与非偏振成像的非均匀性的不同表现，阐述了微偏振片阵列成像的非均匀产生机理，指出了采用非偏振成像非均匀校正方法的失效原因。在构建偏振成像系统对入射偏振光源的响应模型基础上，提出了矩阵校正法。实验部分给出了矩阵校正法对均匀偏振场本底图像和信息丰富场景图像的校正效果，定量分析结果表明，矩阵校正法将均匀本底图像的非均匀性降至校正前的10%左右。     

基于神经网络法的焦平面器件非均匀性校正技术研究

首先分析了传统的非均匀性校正方法的缺点,指出自适应校正红外焦平面器件非均匀性的必要性。根据焦平面器件非均匀性噪声特性和算法研究的需要,介绍了非均匀性失真图像的产生方法。在上述工作的基础上,研究了基于神经的自适应非均匀性校正算法,探讨了最近４领域像素平均、最近４邻域像素灰度加权和８邻域像素灰度加权等三种情况。实验结果表明,８邻域灰度加权算法校正效果较好。     

IRFPA的一种新的非均匀性校正算法

提出在IRFPA非均匀性校正中使用埃尔米特插值方法，与其他传统方法相比较具有运算量小，修正效果好，易于实现等优点。在既有乘性噪声，又有较强加性噪声的情况下，仿真效果优于拉格朗日分段线性插值算法，是一种新的非均匀性校正算法。     

基于神经网络的红外焦平面非均匀性自适应校正算法

由于材料、工艺等原因,红外焦平面阵列(IRFPA)各单元普遍存在响应不一致的现象,从而导致IRFPA都存在非均匀性.非均匀性校正(NUC)是红外图像处理系统中的重要环节.本文在研究了传统的基于神经网络的NUC算法的基础上,提出了一种改进的基于神经网络的非均匀性自适应校正算法,并对比了传统的基于神经网络的算法和本文算法的校正效果和收敛速度,实验表明本文提出的算法校正效果好,收敛速度快.     

红外焦平面器件二点多段非均匀性校正算法研究

分析了红外焦平面探测器的非均匀性机理和各种非均匀性校正算法，提出两点多段非均匀性校正算法，该算法避免了二点校正算法的低精度和多点校正算法的大运算量．在红外多谱段相机上的应用结果表明二点多段非均匀性校正算法具有运算量小、精度高、实用性强的优点。     

基于场景的红外非均匀性校正算法对比研究

红外技术发展到今天,红外凝视焦平面探测器阵列性能高、使用简单,从而成为红外系统的主流。但是,红外探测器的工艺和技术生产不出像可见光CCD那样均匀的红外器件,红外探测器阵列的非均匀性一直是红外凝视探测器的主要缺陷。人们开发了多种非均匀性校正算法,尤其是基于场景的自适应算法,极大地弥补了探测器的非均匀性缺陷。但是到目前为止,各种算法都有一定的局限性,尚不能彻底解决非均匀性问题。针对目前常用的几种非均匀性校正算法,包括时域高通滤波算法、神经网络算法、恒定统计量算法等,在天空、地面等不同场景条件下进行了仿真测试,对算法的实施效果进行了对比分析。     

改进的单幅红外图像局部自适应非均匀校正

为了实现对单幅红外图像的非均匀性校正并且对局部细节的校正效果进行优化,提出了一种局部自适应的非均匀校正算法。算法利用红外焦平面阵列的固定图像噪声呈单方向分布的特性,采用基于高斯权重思想的中值直方图非均匀算法实现红外图像的单参数校正;然后将图像分块,使图像的各局部都能够自适应地选择各自最合适的校正参数,达到优化细节的校正效果。实验结果及分析表明:与单参数中值直方图非均匀校正算法相比,提出的算法在均方根误差、峰值信噪比、图像平滑性等方面都得到了进一步的改善,并且保留了更多的图像细节,为非均匀校正提供了一种方法。     

基于两点的红外图像非均匀性校正算法应用

红外焦平面探测器像元响应存在非均匀性,工程应用中需采用相应的非均匀性校正技术。虽然基于场景的非均匀性校正算法很多,但两点校正算法仍是最为成熟和最容易实现的算法之一。介绍了两点非均匀性校正算法,并对1×128线列红外探测成像系统基于FPGA和DSP平台,进行了工程实现及应用,效果良好。     

基于积分时间的国产红外探测器非均匀性校正算法

由于受制造探测器的半导体质量和工艺过程等因素的影响,红外探测器存在积分时间响应不均匀性。为了提高红外探测器的成像质量,有必要对其存在的非均匀性进行校正。分析了积分时间对探测器单元响应输出的影响,详细阐述了基于积分时间的非均匀性校正算法的原理,并提出了一种盲元补偿方法。将该算法用于国产640×512制冷型探测器的非均匀性校正实验,结果表明该算法对探测器的非均匀性校正具有明显的效果。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-