共查询到19条相似文献,搜索用时 156 毫秒
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结合精确度和稳定性的要求提出了一种适合宽范围电容负载的CMOS运放.在多径嵌套式密勒补偿结构中加入一个抑制电容得到适合各种电容负载的稳定性.为了证实稳定性的提高对该结构进行了理论分析并计算得出数学表达式.基于这种新的频率补偿结构,利用CMOS 0.7μm工艺模型设计了样品芯片.测试结果表明:该运放可以驱动从100pF到100μF负载电容,直流增益为90dB,最小相位裕度为26°;该运放在100pF负载情况下单位增益带宽为1MHz,使用抑制电容仅为18pF. 相似文献
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提出了一种采用共栅频率补偿的轨到轨输入/输出放大器,与传统的Miller补偿相比,该放大器不仅可以消除相平面右边的低频零点,减少频率补偿所需要的电容,还可获得较高的单位增益带宽.所提出的放大器通过CSMC 0.6μm CMOS数模混合工艺进行了仿真设计和流片测试:当供电电压为5V,偏置电流为20μA,负载电容为10pF时,其功耗为1.34mW,单位增益带宽为25MHz;当该放大器作为缓冲器,供电电压为3V,负载电容为150pF,输入2.66 Vpp10kHz正弦信号时,总谐波失真THD为-51.6dB. 相似文献
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提出了一种采用共栅频率补偿的轨到轨输入/输出放大器,与传统的Miller补偿相比,该放大器不仅可以消除相平面右边的低频零点,减少频率补偿所需要的电容,还可获得较高的单位增益带宽.所提出的放大器通过CSMC 0.6μm CMOS数模混合工艺进行了仿真设计和流片测试:当供电电压为5V,偏置电流为20μA,负载电容为10pF时,其功耗为1.34mW,单位增益带宽为25MHz;当该放大器作为缓冲器,供电电压为3V,负载电容为150pF,输入2.66 Vpp10kHz正弦信号时,总谐波失真THD为-51.6dB. 相似文献
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设计了一种低电压低功耗高增益端到端运算放大器.为了提高运放的直流增益,采用了复制运放增益增强技术,这种技术的特点是在提高增益的同时不影响输出摆幅,非常适合低电压场合.该运放采用0.18μm标准CMOS工艺,工作电压为1V.仿真结果表明,在5pF负载电容下所获得运放的直流增益达到65.9dB,增益带宽积为70.28MHz,相位裕度为50°,静态功耗为156.7μW. 相似文献
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设计了一种低电压低功耗高增益端到端运算放大器.为了提高运放的直流增益,采用了复制运放增益增强技术,这种技术的特点是在提高增益的同时不影响输出摆幅,非常适合低电压场合.该运放采用0.18μm标准CMOS工艺,工作电压为1V.仿真结果表明,在5pF负载电容下所获得运放的直流增益达到65.9dB,增益带宽积为70.28MHz,相位裕度为50°,静态功耗为156.7μW. 相似文献
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采用BSM30.5μm CMOS工艺,通过引入电流模式的缓冲级输入输出结构而设计了一种性能较高的CMOS电流反馈运算放大器.在1.5V的电源电压下,当偏置电流为1μA,负载电容为20pF时,对整个电路进行HSPICE仿真.结果表明,该电路结构达到了87dB的开环增益,23.8MHz的单位增益带宽,48°的相位裕度,139dB的共模抑制比,功耗仅为2.09mW. 相似文献
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提出了一种"米勒通路补偿"(MPC)的两级放大器。基于米勒效应的分析,讨论米勒通路补偿的作用并将之应用于两级放大器结构。补偿后的放大器,在很小补偿电容(2 pF)的辅助下可以完成对大负载电容(100 pF)的驱动。基于0.6μm30 V BCD工艺模型的仿真结果显示,MPC放大器在驱动100 pF负载电容下达到直流增益75 dB,相位裕度62.4°,单位增益频率4.4 MHz。 相似文献
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Pengfei Liao Ping Luo Shaowei Zhen Bo Zhang 《Circuits, Systems, and Signal Processing》2014,33(1):287-297
In this paper, a dual-Miller parallel compensation (DMPC) technique for low-power three-stage amplifier is presented with detailed theoretical analysis. A feedback network realized by capacitor and transconductance is added between the first and third stage, which improves significantly the performance when driving large capacitive loads. Furthermore, it is found to be stable for a wide range of capacitive loads. The proposed DMPC amplifier has been implemented in a 0.13-μm CMOS process and the chip area is 0.17×0.11 mm2. It achieves a 0.87 MHz gain-bandwidth product by consuming a total current of 41 μA. The DMPC amplifier is verified to be stable when the load capacitor ranges from 8 pF to 2 nF. 相似文献
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Iman Chaharmahali Shahrooz Asadi Behnam Dorostkar Mosa malaknezhad bosra Mohammad Abedini 《Analog Integrated Circuits and Signal Processing》2017,93(1):61-70
A new method to compensate three-stage amplifier to drive large capacitive loads is proposed in this paper. Gain Bandwidth Product is increased due to use an attenuator in the path of miller compensation capacitor. Analysis demonstrates that the gain bandwidth product will be improved significantly without using large compensation capacitor. Using a feedforward path is deployed to control a left half plane zero which is able to cancel out first non-dominant pole. A three stage amplifier is simulated in a 0.18 μm CMOS technology. The purpose of the design is to compensate three-stage amplifier loading 1000 pF capacitive load. The simulated amplifier with a 1000 pF capacitive load is performed in 3.3 MHz gain bandwidth product, and phase margin of 50. The compensation capacitor is reduced extremely compared to conventional nested miller compensation methods. Since transconductance of each stage is not distinct, and it is close to one another; as a result, this method is suitable low power design methodology. 相似文献
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Ka Nang Leung Mok P.K.T. Wing-Hung Ki Sin J.K.O. 《Solid-State Circuits, IEEE Journal of》2000,35(2):221-230
A novel damping-factor-control frequency compensation (DFCFC) technique is presented in this paper with detailed theoretical analysis, This compensation technique improves frequency response, transient response, and power supply rejection for amplifiers, especially when driving large capacitive loads, Moreover, the required compensation capacitors are small and can be easily integrated in commercial CMOS process. Amplifiers using DFCPC and nested Miller compensation (NMC) driving two capacitive loads, 100 and 1000 pF, were fabricated using a 0.8-μm CMOS process with Vtn=0.72 V and Vtp=-0.75 V. For the DFCFC amplifier driving a 1000-pF load, a 1-MHz gain-bandwidth product, 51° phase margin, 0.33-V/μs slew rate, 3.54-μs settling time, and 426-μW power consumption are obtained with integrated compensation capacitors. Compared to the NMC amplifier, the frequency and transient responses of the DFCFC amplifier are improved by one order of magnitude with insignificant increase of the power consumption 相似文献
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Grasso A.D. Palumbo G. Pennisi S. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2006,53(10):1044-1048
A simple compensation strategy, which employs passive components only, is adopted to design a three-stage operational transconductance amplifier (OTA) suitable for driving high capacitive loads. Compared to the classical nested Miller compensation technique, the new solution exploits two additional resistors and allows a reduction in the values of the compensation capacitors of about an order of magnitude. The OTA was fabricated using 0.35-mum CMOS technology and exhibits a 1.4-MHz gain-bandwidth with a load of 500 pF 相似文献
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《Solid-State Circuits, IEEE Journal of》1983,18(6):629-633
The commonly used two-stage CMOS operational amplifier suffers from two basic performance limitations due to the RC compensation network around the second gain stage. First, it provides stable operation for only a limited range of capacitive loads, and second, the power supply rejection shows severe degradation above the open-loop pole frequency. The technique described provides stable operation for a much larger range of capacitive loads, as well as much improved V/SUB BB/ power supply rejection over very wide bandwidths for the same basic operational amplifier circuit. The author presents a mathematical analysis of this new technique in terms of its frequency and noise characteristics followed by its implementation in all n-well CMOS process. Experimental results show 70-dB negative power supply rejection at 100 kHz and an input noise density of 58 nV/(Hz)/SUP 1/2/ at 1 kHz. 相似文献
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Multistage amplifiers are urgently needed with the advance in technology, due to the fact that single-stage cascode amplifier is no longer suitable in low-voltage designs. Moreover, the short-channel effects of the sub-micro CMOS transistor cause output-impedance degradation and hence the gain of an amplifier is reduced dramatically[1~6]. For multistage amplifiers, most of the compensation methods are based on pole splitting and pushing the right-half-plane zero to high frequencies or pole-ze… 相似文献
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Song Guo Hoi Lee 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2009,56(10):758-762
This brief presents a single-capacitor active-feedback compensation (SCAFC) scheme for three-stage internal amplifiers driving small capacitive loads. The proposed SCAFC scheme can stabilize the three-stage amplifier by using only a single small-value compensation capacitor, thereby significantly reducing the amplifier implementation area. With the small-value compensation capacitor, the wide gain-bandwidth product (GBW) of the SCAFC amplifier can also be achieved under low-power conditions. Implemented in a standard 0.35-mum CMOS process, the proposed three-stage SCAFC amplifier achieves over 100-dB dc gain, 9.6-MHz GBW, and 6.1-V/mus average slew rate, by only dissipating 90 muW at 1.5 V and using a 1-pF compensation capacitor, when driving a 500-kOmega // 20-pF load. The proposed SCAFC amplifier experimentally improves both bandwidth-to-power and slew-rate-to-power efficiencies by more than 14 times and 9 times, respectively, as compared to a conventional three-stage nested-Miller-compensated amplifier. 相似文献