共查询到18条相似文献,搜索用时 135 毫秒
1.
利用室温下反应磁控溅射的方法在p-Si(100)衬底上制备了HfO2栅介质层,研究了HfO2高k栅介质的电流传输机制和应力引起泄漏电流(SILC)效应.对HfO2栅介质泄漏电流输运机制的分析表明,在电子由衬底注入的情况下,泄漏电流主要由Schottky发射机制引起,而在电子由栅注入的情况下,泄漏电流由Schottky发射和Frenkel-Poole发射两种机制共同引起.通过对SILC的分析,在没有加应力前HfO2/Si界面层存在较少的界面陷阱,而加上负的栅压应力后在界面处会产生新的界面陷阱,随着新产生界面陷阱的增多,这时在衬底注入的情况下,电流传输机制就不仅仅是由Schottky发射机制引起,而存在Frenkel-Poole发射机制起作用.同时研究表明面积对SILC效应的影响很小. 相似文献
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Al_2O_3栅介质的制备工艺及其泄漏电流输运机制 总被引:4,自引:0,他引:4
利用室温下反应磁控溅射结合炉退火的方法在P Si(10 0 )衬底上制备了Al2 O3 栅介质层,研究了不同的溅射气氛和退火条件对Al2 O3 栅介质层物理特性的影响.结果表明:在较高温度下N2 气氛中退火有助于减小泄漏电流;在O2 气氛中退火有助于减少Al2 O3 栅介质中的氧空位缺陷.对Al2 O3 栅介质泄漏电流输运机制的分析表明,在电子由衬底注入的情况下,泄漏电流主要由Schottky发射机制引起,而在电子由栅注入的情况下,泄漏电流可能由Schot tky发射和Frenkel Poole发射两种机制共同引起. 相似文献
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利用室温下反应磁控溅射结合炉退火的方法在P-Si(100)衬底上制备了Al2O3栅介质层,研究了不同的溅射气氛和退火条件对Al2O3栅介质层物理特性的影响.结果表明:在较高温度下N2气氛中退火有助于减小泄漏电流;在O2气氛中退火有助于减少Al2O3栅介质中的氧空位缺陷.对Al2O3栅介质泄漏电流输运机制的分析表明,在电子由衬底注入的情况下,泄漏电流主要由Schottky发射机制引起,而在电子由栅注入的情况下,泄漏电流可能由Schottky发射和Frenkel-Poole发射两种机制共同引起. 相似文献
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含N超薄栅氧化层的击穿特性 总被引:1,自引:1,他引:0
研究了含 N超薄栅氧化层的击穿特性 .含 N薄栅氧化层是先进行 90 0℃干氧氧化 5 m in,再把 Si O2 栅介质放入 10 0 0℃的 N2 O中退火 2 0 min而获得的 ,栅氧化层厚度为 10 nm.实验结果表明 ,在栅介质中引入适量的 N可以明显地起到抑制栅介质击穿的作用 .分析研究表明 ,N具有补偿 Si O2 中 O3≡ Si·和 Si3≡ Si·等由工艺引入的氧化物陷阱和界面陷阱的作用 ,从而可以减少初始固定正电荷和 Si/ Si O2 界面态 ,因此提高了栅氧化层的抗击穿能力 相似文献
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对含 F超薄栅氧化层的击穿特性进行了实验研究。实验结果表明 ,在栅介质中引入适量的 F可以明显地提高栅介质的抗击穿能力。分析研究表明 ,栅氧化层的击穿主要是由于正电荷的积累造成的 ,F的引入可以对 Si/Si O2 界面和 Si O2 中的 O3 ≡ Si·与 Si3 ≡ Si·等由工艺引入的氧化物陷阱和界面陷阱进行补偿 ,从而减少了初始固定正电荷和 Si/Si O2 界面态 ,提高了栅氧化层的质量。研究结果表明 ,器件的击穿电压与氧化层面积有一定的依赖关系 ,随着栅氧化层面积的减小 ,器件的击穿电压增大。 相似文献
11.
Piyas Samanta 《半导体学报》2017,38(10):104001-6
The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density JG at high oxide fields Eox in 5.4 to 12 nm thick SiO2 films between 25 and 300℃. The leakage current measured up to 300℃ was due to Fowler–Nordheim (FN) tunneling of electrons from the accumulated n+-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide–semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits. 相似文献
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In this paper, reliability aspects of thin Zr- and Hf-silicate layers are addressed by analyzing the stress induced leakage current (SILC) and charge trapping during constant voltage stress (CVS) and constant current stress (CCS). Voltage polarity and temperature effects on the degradation of the layers are also studied. SILC in silicate layers is found to be strongly polarity dependent and it is suggested that the damage causing it is near silicate/Si interface. SILC has a transient component and its recovery is explained by the trapping/detrapping of traps participating in Poole–Frenkel conduction. Unlike SiO2, hot carrier induced damage is not the main mechanism for SILC creation. Therefore, the origin of SILC in silicate layers is distinctly different to SiO2. 相似文献
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Chin-Lung Cheng Chun-Yuan Lu Kuei-Shu Chang-Liao Ching-Hung Huang Sheng-Hung Wang Tien-Ko Wang 《Electron Devices, IEEE Transactions on》2006,53(1):63-70
Effects of the defects at high-/spl kappa/ dielectric/Si interface on the electrical characteristics of MOS devices are important issues. To study these issues, a low defect (denuded zone) at Si surface was formed by a high-temperature annealing in hydrogen atmosphere in this paper. Our results reveal that HfO/sub x/N/sub y/ demonstrates significant improvement on the electrical properties of MOS devices due to its low amount of the interstitial oxygen [O/sub i/] and the crystal-originated particles defects as well as small surface roughness at HfO/sub x/N/sub y//Si interface. The current-conduction mechanism of the HfO/sub x/N/sub y/ film at the low- and high-electrical field and high-temperature (T>100/spl deg/C) is dominated by Schottky emission and Frenkel-Poole (FP) emission, respectively. The trap energy level involved in FP conduction was estimated to be around 0.5eV. Reduced gate leakage current, stress-induced leakage current and defect generation rate, attributable to the reduction of defects at HfO/sub x/N/sub y//Si interface, were observed for devices with denuded zone. The variable rise and fall time bipolar-pulse-induced current technique was used to determine the energy distribution of interface trap density (D/sub it/). The results exhibit that relatively low D/sub it/ can be attributed to the reduction of defects at Si surface. By using denuded zone at the Si surface, HfO/sub x/N/sub y/ has demonstrated significant improvement on electrical properties as compared to SiO/sub x/N/sub y/. 相似文献
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Neutral electron traps are generated in gate oxide during electrical stress, leading to degradation in the form of stress-induced leakage current (SILC) and eventually resulting in breakdown. SILC is the result of inelastic, trap-assisted tunneling of electrons that originate in the conduction band of the cathode. Deuterium annealing experiments call into question the interfacial hydrogen release model of the trap generation mechanism. A framework for modeling time-to-breakdown is presented. 相似文献
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Conduction mechanisms in MOS gate dielectric films 总被引:1,自引:0,他引:1
This paper reviews the conduction mechanisms in the gate dielectric films of MOSFETs for VLSI and ULSI technologies. They include Fowler–Nordheim tunneling, internal Schottky (or Pool–Frenkel) effect, two-step (or trap-assisted) tunneling, shallow-trap-assisted tunneling, and band-to-band tunneling. The current transport in the gate dielectric films is manly controlled by film material composition, film processing conditions, film thickness, trap energy level and trap density in the films. In general, for a given gate dielectric film, the current transport behaviors are normally governed by one or two conduction mechanisms. 相似文献
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Houtsma V.E. Holleman J. Salm C. Widdershoven F.P. Woerlee P.H. 《Electron Device Letters, IEEE》1999,20(7):314-316
The gate bias polarity dependence of stress-induced leakage current (SILC) of PMOS capacitors with a p+ polycrystalline silicon (poly-Si) and polycrystalline Silicon-Germanium (poly-Si0.7 Ge0.3) gate on 5.6-nm thick gate oxides has been investigated. It is shown that the SILC characteristics are highly asymmetric with gate bias polarity. This asymmetric behavior is explained by the occurrence of a different injection mechanism for negative bias, compared to positive bias where Fowler-Nordheim (FN) tunneling is the main conduction mechanism. For gate injection, a larger oxide field is required to obtain the same tunneling current, which leads to reduced SILC at low fields. Moreover, at negative gate bias, the higher valence band position of poly-SiGe compared to poly-Si reduces the barrier height for tunneling to traps and hence leads to increased SILC. At positive gate bias, reduced SILC is observed for poly-SiGe gates compared to poly-Si gates. This is most likely due to a lower concentration of Boron in the dielectric in the case of poly-SiGe compared to poly-Si. This makes Boron-doped poly-SiGe a very interesting gate material for nonvolatile memory devices 相似文献
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Wataru Mizubayashi Naoki Yasuda Kenji Okada Hiroyuki Ota Hirokazu Hisamatsu Kunihiko Iwamoto Koji Tominaga Katsuhiko Yamamoto Tsuyoshi Horikawa Toshihide Nabatame Hideki Satake Akira Toriumi 《Microelectronics Reliability》2005,45(7-8):1041-1050
The carrier conduction and the degradation mechanism in n+gate p-channel metal-insulator-semiconductor field-effect-transistors with HfAlOX (Hf: 60 at.%, Al: 40 at.%)/SiO2 dielectric layers have been investigated using carrier separation method. Since gate current depends on substrate bias and both electron and hole currents are independent of temperature over the range of 25–150 °C, the conduction mechanism for both currents is controlled by a tunneling process. As the interfacial SiO2 layer (IL) thickness increases in a fixed high-k layer thickness (Thigh-k), a dominant carrier in the leakage current changes from hole to electron around 2.2-nm-thick IL. This is due to an asymmetric barrier height for electrons and holes at the SiO2/Si interface. On the contrary, in the case of a fixed IL thickness of 1.3 nm, the hole current is dominant in the leakage current, regardless of Thigh-k. It is shown that the dominant carrier in the leakage current depends on the structure of the high-k stack. Both electron and hole currents for the stress-induced-leakage-current (SILC) state increase slightly relative to the initial currents, which means that the trap generation in the high-k stack occurs near both the conduction band edge of n+poly-Si gate and the valence band edge of Si substrate. The electron current at soft breakdown (SBD) state dramatically increases over that for the SILC state, while the hole currents for both the SILC state and SBD are almost the same. This indicates that the defect sites generated in the high-k stack after SBD are located at energies near the conduction band edge of n+poly-Si gate. Both the defect generation rate and the defect size in the HfAlOX/SiO2 stacks are large compared with those in SiO2. It is inferred that, in high-k dielectric stack, the defect generation mainly occurs in the high-k side rather than the IL side, and the defect size larger than the case of SiO2 could be related to a larger dielectric constant of the high-k layer. 相似文献
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The device performance and reliability of higher-/spl kappa/ HfTaTiO gate dielectrics have been investigated in this letter. HfTaTiO dielectrics have been reported to have a high-/spl kappa/ value of 56 and acceptable barrier height relative to Si (1.0 eV). Through process optimization, an ultrathin equivalent oxide thickness (EOT) (/spl sim/9 /spl Aring/) has been achieved. HfTaTiO nMOSFET characteristics have been studied as well. The peak mobility of HfTaTiO is 50% higher than that of HfO/sub 2/ and its high field mobility is comparable to that of HfSiON with an intentionally grown SiO/sub 2/ interface, indicative of superior quality of the interface and bulk dielectric. In addition, HfTaTiO dielectric has a reduced stress-induced leakage current (SILC) and improved breakdown voltage compared to HfO/sub 2/ dielectric. 相似文献