凹球面双频聚焦超声声场的线性声学分析

在线性声学条件下,研究了差频相干模式下的双频聚焦声场的空间-时间特性,分析了换能器分割面积、不同频差对声场的影响.通过计算两波在不同初始相位时轴上瞬时声压起伏的周期性变化规律,证明其合成声场是统计平稳和均匀的.结果表明,适当选择分割面积比和频差,双频声场的"损伤声焦域"相对于单频有明显扩大,并在离体牛肝的损伤实验中得到初步验证,为双频高强度聚焦超声(HIFU)换能器的设计及提高治疗效率提供参照.     

超声治疗换能器的声场分析

无创超声治疗使用的体外聚焦超声换能器的聚焦方式有多种,多元组合聚集是其中之一。与其他聚焦方式相比,多元组合聚焦超声换能器具有较大的聚焦深度、较理想的焦域以及较高的声强度等优点,并且聚焦区域和声强度易于控制。提出了一种新的多阵元球壳形超声换能器结构,换能器由113个排列在一个孔径为112mm的球形凹面上的圆形压电陶瓷片构成,焦距为100mm,工作频率为1MHz。并应用几何声学法建立了换能器的声场的计算模型,并进行了实验验证。研究结果表明：该换有器具有优异的声场性能,与机械扫描的方法相结合应用于高强度聚焦超声无创治疗设备,将极大地降低设备的复杂性,完全能够满足超声无创治疗的应用。     

凹球面自聚焦声场非线性效应的研究

用球束方程(SBE)研究了声源参数和媒质特性对凹球面自聚焦声场非线性效应的影响。结果表明,谐波的最大幅值出现在声焦点附近,基波与线性声场的分布类似,而高阶谐波的聚焦性能更好。超声频率、声源表面初始声压幅值或非线性参数越大,即平面波冲击间断形成距离越短,声的非线性效应越明显。声衰减会使非线性效应减弱,而凹球面曲率半径增大会使谐波和基波最大值的位置偏离更明显。     

64阵元高强度聚焦超声相控换能器的仿真研究

超声相控换能器具有焦距可调,多焦点聚焦的特性。以64阵元球面相控换能器为例,利用Westervelt声波非线性传播方程及时间反转法(TR)对64阵元圆形相控换能器在水中不同焦点处形成的焦域声压分布进行时域有限差分法(FDTD)仿真研究。研究结果表明,频率为0.5⁰.8 MHz时自聚焦形成的焦距均小于球面几何焦距;单焦点聚焦时,随着焦点偏离声轴的距离增大,焦点处的最大声压逐渐降低,随着焦距增大,旁瓣与主瓣最大声强比值先减小后增大;频率为0.7MHz,双焦点聚焦时,在焦点间设定距离>7mm的条件下,焦点间旁瓣很小,当焦点间距离≤2.5mm时,两焦域融合成单一焦域。     

一种超声相控阵大焦域聚焦的设计方法

本文提出一种实现超声相控阵换能器大焦域声场的方法。这种方法就是通过多次正向—逆向变换计算出相控阵换能器各阵元的激励向量。仿真结果表明：此方法能准确地控制169阵元相控阵换能器的声场模式,能得到比较满意的单焦点大焦域声场分布。     

热疗用微波辐射器长度对其性能影响的理论分析

本文分析了一种带冷却水的用于人体体腔内部热疗的绝缘偶极子微波辐射器的特性。利用辐射器上的电流分布导出辐射阻抗和驻波经与辐射器长度的关系式，探讨了体腔周围被加热生物组织中分布的比吸收率，进而根据热平衡方程得到辐射器长度对温度场分布的影响，为体腔内部热疗用微波辐射器的设计提供了理论依据。     

微波热疗辐射器聚束方法的研究进展

肿瘤的热疗法是当前肿瘤放疗、化疗的有效辅助疗法.影响肿瘤的微波热疗效果的决定性因素是微波能量在肿瘤组织中的合理分布,如何提高微波辐射器的辐射效率,将辐射的微波能聚焦在肿瘤体是当前辐射器研究的重点.文中针对国内外已研制的微波热疗辐射器,从单辐射器和辐射器阵列两个方面综述辐射器聚束的方法及研究工作进展.     

自聚焦共焦式微型探测系统的研究

为解决微小内轮廊为代表的微小尺寸的非接触测量问题，本文提出了将自聚焦透镜体积小与共焦显微技术的纵向层析特性有机结合的自聚焦共焦微型显微技术的光聚焦探测系统。介绍了系统的工作原理和结构装置，对系统中的关键技术进行了优化设计，通过对自聚焦透镜、针孔，光源及探测器系统的设计，可以有效地实现高精度微型光聚焦探测，初步实验结果表明，系统的轴向分辨率可达10nm。     

多阵元聚焦换能器声场的数值模拟及分析

提出一种新型的多阵元聚焦换能器,该聚焦换能器由6个排列在一个球径为146 mm的凹球面上的透镜式单元换能器组成,透镜曲率半径为112 mm,工作频率为1 MHz。该文应用坐标变换法对该聚焦换能器的复杂声场分布进行了数值计算,并测定了其声功率。研究结果表明:该结构具有较大的聚焦深度、较理想的焦域、可改变的声场能量,工艺简单,成本低廉。     

超声针灸的“针”形声场实现

从改进超声针灸的声场形态入手,研究了针形声焦域的实现。通过在凹球面压电陶瓷片分割成6个面积相等的环域,对6个环域产生的轴向声场进行离散化。为了保证在针形声场区域内的声场尽可能的均匀、集中,针形区域外的声强尽可能的低,建立了约束规划模型。采用了拉格朗日乘子约束优化方法,对模型进行优化,最终得到了想要的声场分布。计算机模拟和实验都表明,用该方法设计的针形声场分布满足超声针灸的需要     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.