红外图像WBC变换方向内和尺度间降噪

针对传统图像降噪算法不能很好处理含噪红外图像的问题,本文分析红外图像在WBC变换后邻域系数相关性将广义CB形态学应用于邻域系数降噪,并结合基于尺度间相关性的自适应阈值降噪,提出一种基于WBC变换邻域系数相关性和尺度间相关性的红外图像降噪算法。仿真结果表明,该方法相比Bayes估计降噪、WBC尺度间硬阈值降噪和WBC尺度间自适应降噪获得了更好的SNR提升,其SSIM值也更接近于1。     

基于尺度间和尺度内相关陛的平稳小波红外图像去噪

提出了一种基于尺度间和尺度内相关性的平稳小波变换红外图像去噪方法。首先对红外图像进行离散平稳小波变换,分别对各个分解层的高频子带,利用不同尺度小波系数形成的系数向量,通过线性最小均方误差估计小波系数,获得各个高频子带的估计系数,再利用小波系数尺度内的邻域相关性对小波系数进行修正,然后通过小波反变换得到去噪图像。仿真结果表明,考虑尺度间和尺度内相关性的平稳小波红外图像去噪算法能有效地去除红外图像噪声,在信噪比和视觉质量上要优于单纯考虑尺度间相关性的去噪方法。     

基于尺度间和尺度内相关性的平稳小波红外图像去噪

提出了一种基于尺度间和尺度内相关性的平稳小波变换红外图像去噪方法.首先对红外图像进行离散平稳小波变换,分别对各个分解层的高频子带,利用不同尺度小波系数形成的系数向量,通过线性最小均方误差估计小波系数,获得各个高频子带的估计系数,再利用小波系数尺度内的邻域相关性对小波系数进行修正,然后通过小波反变换得到去噪图像.仿真结果表明,考虑尺度间和尺度内相关性的平稳小波红外图像去噪算法能有效地去除红外图像噪声,在信噪比和视觉质量上要优于单纯考虑尺度间相关性的去噪方法.     

基于Contourlet变换和模糊理论的红外图像增强算法

红外图像具有噪声大、对比度低等特点,针对该特点,提出了一种基于Contourlet变换与模糊理论的红外图像增强算法。首先对图像进行Contourlet变换,得到多尺度多方向的低通子带和带通子带。对低通子带,进行基于子带系数最大最小值的线性变换,提高图像的整体对比度;对于带通子带,先估计噪声阈值,对子带系数进行抑制噪声处理,然后通过模糊增强算法,对高频系数进行非线性增强,增强目标边缘纹理的特征,抑制背景信号。最后经过Contourlet逆变换得到对比度增强,噪声被抑制的图像。经过算法仿真,与几种现有的图像增强算法相比,该算法更能有效地抑制噪声,增强图像的对比度,突出图像的边缘与细节纹理信息。     

基于轮廓变换的自适应阈值图像去噪算法

针对Contourlet变换子带系数相关的特性,对图像去噪的阈值进行了研究,提出了一种新的自适应阈值图像去噪算法。该方法首先对噪声图像进行Contourlet变换,得到不同尺度、不同方向上的子带系数,再根据子带系数的能量关系采用改进的Bayes Shrink自适应阈值对图像进行去噪处理。实验结果表明:这种方法提高了图像的PSNR值,增强了去噪后图像的视觉效果,而且更好地保留了图像的边缘信息。     

基于小波变换的自适应多模红外小目标检测

小波变换是一种有效的红外小目标检测方法。然而,在不同的子带、不同方向上,信号和噪声所呈现的特性不同,采用单一的阈值往往无法得到一个令人满意的检测结果。针对这一情况,提出了一种基于小波变换的自适应多模红外小目标检测算法。该算法可以根据不同尺度和方向上噪声的分布自动调整阈值,使得检测结果更加有效。其中分别采用了自适应Bayes Shrink阈值和广义交叉验证阈值处理每个子带的小波系数,接着再利用处理后的系数重构小波图像,最后通过一个简单的全局阈值分割得到红外小目标。实验结果表明,与对照方法相比,所提出的算法具有更好的检测性能和鲁棒性。     

基于小波变换与像元对目标的短波红外图像增强算法

弱光夜视是短波红外成像的重要应用领域之一。针对短波红外弱光图像对比度低,增强后噪声也被放大的特点,提出了一种基于小波变换与像元对目标的短波红外图像增强算法。首先通过小波变换获得不同频率成分的子带图像;然后对低频子带图像进行基于像元对目标的灰度变换处理,对高频子带图像进行可变阈值降噪处理;最后通过小波反变换将处理后的子带重构得到增强结果。将该算法与基于直方图的增强算法,全局优化线性窗口色调映射算法和自然保持增强算法进行比较,采用图像的信息熵和基于Michelson法则的对比度增强度量作为客观评价指标,结果表明本文算法更为有效地提高了短波红外弱光图像的对比度,抑制了噪声的增强,提升了图像的视觉效果。     

基于小波变换与Retinex的电路板红外图像增强技术

电路板红外图像发热芯片区域的增强是红外图像故障检测系统中一项重要研究内容。针对电路板某些芯片的发热量小,芯片区域红外图像与背景差异弱的特点,为提高故障检测效率,设计了一种融合小波变换与改进的多尺度Retinex红外图像增强算法。首先,通过小波变换获得不同频率的子带图像;然后,利用多尺度Retinex算法对低频子带图像进行增强处理;对于高频子带图像,利用可变阈值去噪,引入图像清晰度参数,依据参数值对高频图像进行适度增强。最后,对处理后的高、低频图像进行小波逆变换与重构,实现电路板红外图像增强。对增强后的红外图像进行的定量以及定性评价表明:与单一的利用直方图均衡算法、小波变换法以及多尺度Retinex增强算法相比,本文算法改善了某些发热芯片区域红外图像对比度低且细节模糊问题,抑制了噪声,提升了电路板红外图像整体视觉效果。     

基于双密度双树复数小波变换的合成 孔径雷达图像降噪研究

 针对合成孔径雷达(SAR)图像相干斑噪声抑制问题,本文将双密度双树复数小波变换(DD-DT CWT)结合具有局部方差估计的双变量收缩阈值函数(BSF)构成一种新的SAR图像降噪算法实现合成孔径雷达图像降噪.首先将SAR图像用双密度双树复数小波变换进行多尺度分解,考虑小波系数间的相关性,用双变量概率密度函数作为小波系数及其父代系数的统计关性的模型,并通过Bayesian估计理论导出相应的非线性双变量收缩函数对图像不同方向的小波系数进行非线性自适应的处理,最后重建降噪后的图像.分别用仿真SAR图像和实际图像对算法进行验证,并与其它方法的性能进行比较,对不同算法处理后图像进行了主客观评价,分析结果表明,新算法的去噪效果明显优于传统的小波变换方法,不仅有效实现了图像降噪,而且较好保留了图像细节.含噪SAR图像经该算法处理后,图像性能指标均有提高.     

基于二代Curvelet变换的红外与可见光图像融合

针对红外与可见光成像传感器的物理特性,提出了一种基于二代Curvelet变换的图像融合算法.首先对原始图像分别进行快速离散Curvelet变换,得到不同尺度与方向下的子带系数.对低频子带系数,根据红外图像的目标特性与可见光图像的细节信息确定其融合权值;对不同尺度与方向下的高频子带系数,采用基于局部区域能量匹配的融合规则.最后经Curvelet逆变换得到融合结果.实验结果表明,该算法可以有效地综合可见光与红外图像中的重要信息,其融合结果较典型的基于塔式分解与基于小波变换的图像融合算法,在主观视觉效果与客观评价指标上均有所改善.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-