NGN规划方法初探

随着网络体系结构的演变和宽带技术的发展，传统网络向下一代网络(NGN)的演进是不可避免的大趋势，基于软交换(Softswitch)的下一代网络开展传统的话音业务和多媒体业务的商业应用已逐步出现。本文在介绍NGN基本构架的基础上，提出NGN业务网络规划的基本流程，并详细阐述了NGN网络规划的基本思路。     

移动软交换和固定NGN融合的解决方案

下一代网络(NGN)是未来固定网络发展的方向,而3G是目前移动通信网络发展的热点.全业务运营商对各种新技术和新业务提出了越来越多的需求,移动和固定NGN的融合将是未来电信网络的发展趋势.本文分析了这两种技术融合的可能性,提出了中兴通讯移动软交换和固定NGN融合的解决方案.     

下一代网络中业务感知模型研究

下一代网络（NGN）是业务驱动的网络,提供具有不同QoS要求的IP业务是NGN需要解决的关键问题,感知网络中的各种业务流对NGN的管理和安全具有重要意义。本文通过以对VoIP和P2P为代表的下一代网络业务有效识别、控制和管理技术的研究,从业务识别、业务管理等方面提出了网络业务识别系统,设计出应用于下一代网络的业务感知模型,能有效解决下一代网络由于缺乏应用层业务感知而导致的网络管理、网络安全等问题。     

下一代承载网建设思路探讨

下一代网络(NGN)的发展日新月异,NGN和3G业务在未来几年将有大规模的发展,下一代业务承载网络建设将是电信业务发展成败的关键所在.文章从服务质量、可靠性、网络安全和地址规划等几个方面对下一代承载网建设的思路作了介绍和分析.     

中国联通下一代网络的实践与思考

文章介绍了中国联通的多业务统一网络平台,包括多业务服务质量(QoS)保障的融合的承载平台、融合的软交换核心控制架构、多业务QoS保障的城域综合业务网络和基于IPv6的网络承载技术.依据中国联通在下一代网络(NGN)方面的实践,文章对多业务统一网络平台的先进性、效果与效益进行了总结,并指出了存在的问题.文章指出:由于未来NGN技术将向基于IP多媒体子系统(IMS)的NGN方向继续演进,同时网络承载层技术将逐步从IPv4过渡到IPv6,因此中国联通将积极探索基于IMS的NGN网络架构与组网模式,努力开展面向IPv6的应用实验与推广工作,特别是移动IPv6业务的开发和推进.     

基于业务感知的下一代网络服务质量管理模型

下一代网络(NGN)是基于软交换、业务网与承载网分离的多业务融合网络。由于其多业务特性,出现了对业务流进行区分的业务感知技术,并将在NGN中起重要作用。NGN结构及特性的革命性变化,也对NGN的网管技术提出了新的要求,带来了新的挑战。NGN的多业务特性要求其网管技术能够实现对业务层面的管理和监测,从而为NGN提供高品质业务打下基础。文中提出了一种能动态业务感知的网管监测系统的智能代理结构模型。     

浅谈固网智能化及其相关问题

文章通过对固网现状的分析,结合固网业务属性数据寄存器(SHLR)技术,提出了当前固网智能化的几种实现方法;以及如何通过网络转型,来促进业务转型,从而使网络运营商向综合运营商转变.利用公用交换电话网(PSTN)、下一代网络(NGN)和未来3G网络,固网运营商将发展成多网络综合运营商;利用现有PSTN用户规模和业务,发展融合业务,形成差异化的竞争优势.NGN智能化解决了PSTN用户享受NGN业务覆盖问题,将促进PSTN用户与NGN用户无缝演进和融合.     

中国移动的NGN路线

中国移动对NGN的理解 NGN是一个广泛的概念,泛指下一代网络,在不同的领域有不同的NGN,有以ASON为主体的下一代传送网络,以IPv6为核心的下一代互联网(NGI),以软交换为核心的下一代交换网络、下一代业务网络等等.这里所指的NGN是指下一代的交换网络.     

下一代网络体系结构研究及软交换面临的挑战

目前，许多国际标准化组织均积极参与研究下一代网络技术，特别是ITU-T SG13研究组，牵头组织NGN2004 Project来研究NGN相关技术。2002年11月在日内瓦召开的2001～2004研究期会议上，下一代网络技术又成为会议讨论的热点，与会期间不但组织了NGN的专题研讨会，还与特别研究组(SSG)召开了联合研讨会，取得了多项研究成果，包括分析了NGN的特点，提出了NGN的功能模型，分析了NGN对移动性的要求，以及分析了NGN需要研究和解决的问题。作为下一代网络控制层面技术之一的软交换，不但应支持语音业务的所有功能，而且应具有多种媒体…     

NGN:ITU电信展释放成熟魅力

现在,各国都在构筑下一代网络NGN,以提供更多的服务.网络是支撑运营商业务发展的基础设施,现代通信网是一个大规模、广覆盖、结构复杂的庞大系统,为满足运营商全面的业务转型,通信网络必将向下一代网络(NGN)过渡和发展.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.