过采样模／数转换器的模拟与测试

通常采用诸如峰值误差、积分非线性度或微分非线性度等参数来表征模-数转换器的性能。然而,这些参数已不能用来表征采用反馈和过采样结构的转换器的性能。本文提出了表征A/D转换器的线性,非线性和统计特性的另一些参数,并提出了一种新方法(称为正弦最小误差法)来估计这些参数的数值。所提出的方法同样适用计算机模拟或对试验测量实际电路的方法来分析A/D转换器的性能。     

高速12位D/A转换器

介绍了高速12位D/A转换器的电路设计,采用2μm等平面高速双极工艺,研制出数据更新率≥80MHz,线性误差≤3LSB,微分非线性≤3LSB的12位D/A转换器电路.     

高速12位D/A转换器

介绍了高速12位D/A转换器的电路设计,采用2μm等平面高速双极工艺,研制出数据更新率≥80MHz,线性误差≤3LSB,微分非线性≤3LSB的12位D/A转换器电路.     

高速12位D/A转换器

介绍了高速12位D/A转换器的电路设计，采用2μm等平面高速双极工艺，研制出数据更新率≥80MHz，线性误差≤3LSB，微分非线性≤3LSB的12位D/A转换器电路.     

多晶硅电阻线性度补偿方法研究

介绍了多晶硅电阻非线性度对信号链整体电路性能的影响,分析了多晶硅电阻非线性产生的原因.提出了衬底电位补偿和组合多晶补偿两种非线性补偿设计方法.采用仿真和测试,对比了未经补偿、新补偿方法的12位D/A转换器的性能.结果表明,经过多晶硅电阻补偿和非线性补偿后的D/A转换器达到了更优的线性度.     

CMOS图像传感器中RSD A/D转换器的设计与实现

提出了CMOS图像传感器中RSD A/D转换器的设计方法.基于冗余符号数(RSD)算法,RSD A/D转换器降低了对比较器的性能要求.并且全差分的模拟信号处理用以改进抗噪声度,信噪比和系统的动态范围.RSD A/D转换器是基于90 nm CMOS工艺实现的,测试结果表明它的微分非线性误差(DNL)为±1 LSB,积分非线性误差(INL)为±1.5 LSB,总的未调整误差(TUE)为-3 LSB～1 LSB,功耗约为20 mW.     

一种电阻串加内插结构的16位D/A转换器

设计了一种10位电阻串分压加6位内插结构的16位电压输出型D/A转换器。高10位采用1 024个电阻串分压网络,低6位采用64个运放输入级内插结构,均采用温度计的方式进行线性叠加,从结构上保证了16位D/A转换器的单调性。该D/A转换器的输出运放采用了PMOS输入折叠式共源共栅加Class AB输出缓冲结构、多级嵌套式密勒补偿(NMCNR),实现了高直流增益和大电容负载下的稳定性。该16位D/A转换器基于0.6 μm CMOS工艺设计,在5 V电源电压下,仿真结果表明,微分非线性误差为0.35 LSB,积分非线性误差为3.05 LSB,建立时间为6.12 μs,无杂散度动态范围(SFDR)为93.41 dB,功耗为1.84 mW。在接470 pF电容负载的条件下,输出运放直流增益为150.63 dB,单位增益带宽为1.59 MHz,相位裕度为65.84°。     

D／A转换器非线性误差的一种自动修正方法

本文简要地讨论了D／A转换器的误差，利用线性回归的方法对D／A转换器的非线性误差进行直线拟合，然后对回归系数采用硬件进行修正，以使D／A转换器的误差达到最小值。     

基于80C196KB的高速A/D参数测试技术

探讨了一种以80C196KB为核心并利用直方图测试理论实现高速A/D转换器线性度参数的测试技术，为高速A/D转换器线性误差的测试与分析提供了一种有效的方法。     

一种用于高速A/D转换器的高精度参考电压电阻网络

提高分压电阻网络输出参考电压的精度对设计高速A/D转换器有重要意义.本文基于对参考电压非线性误差的分析提出一种并联式高精度参考电压电阻网络,给出其输出参考电压在最坏情况下的非线性误差分布形式.详细的讨论以及模拟结果表明勿需补偿电路,并联式电阻网络通过减少支路电阻串上的电阻数目能有效地抑制由于负载效应造成的参考电压非线性误差,使得输出参考电压的精度明显提高,同时稳定速度加快,驱动负载能力强,对温度的灵敏度低,适合于多种结构的高速A/D转换器,如:全并行、分步式、折叠式等.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.