红外隐身技术在无人机上的应用研究

随着红外探测技术和精确制导武器的飞速发展,隐身无人机成为了各军事强国的研究热点。在未来的战场上,无人机将代替普通战斗机在敌区范围内执行侦察、打击等作战任务。为了提高无人机的突防、生存能力以及作战效能,有效减小雷达散射截面的同时必须对其红外辐射特征进行有效减小或抑制。分析了目前无人机所面临的主要红外威胁,通过讨论无人机的红外辐射特征,归纳出实现无人机红外隐身技术所需的几种主要途径:冷却降温技术、外形遮挡技术以及降低红外发射率材料技术等。研究了红外隐身技术和抑制措施以及国外服役或者验证阶段的比较典型隐身无人机上的应用情况,得出未来无人机隐身技术的发展方向及所面临的难题,对于国内未来无人机红外隐身设计具有重要的参考价值。     

基于隐身效率的红外隐身性能评估方法

为定量描述红外隐身材料性能,进而评价装备的红外隐身效果,从目标的红外辐射特性出发,结合热成像系统的视距估算理论及静态性能理论,提出了目标"隐身效率"的概念,在此基础上建立了红外隐身性能评估模型.对某装备在不同观测等级下和不同探测概率下的隐身效率进行了分析计算,从理论上模拟了红外探测系统对隐身装备的探测情况,实现了对装备隐身性能的定量评估.     

隐身技术在导弹上的应用

隐身导弹将是未来导弹的一个发展方向,如何发展隐身导弹已成为各国军方高度重视的课题.本文简述了导弹实现隐身的主要技术--雷达隐身技术和红外隐身技术.导弹外形设计和使用吸波材料是实现雷达隐身的关键技术;发动机红外抑制技术和使用红外隐身材料是实现红外隐身的关键技术,最后简要分析了隐身导弹的现状和发展趋势.     

基于多层MIM结构超材料的耐高温波长选择性宽带红外隐身特性研究

超材料是一种人工复合结构,因非凡的红外发射/吸收调控能力,成为实现红外隐身技术的有效途径。针对当前超材料实现波长选择性红外辐射隐身的不足,提出和设计了基于耐高温金属材料钼Mo的多层金属 介质 金属(MIM)结构超材料,同时实现了5～8μm波段的宽带高发射(吸收)和中红外波段3～5μm、远红外波段8～14μm的宽带低发射(吸收)。进一步研究表明该隐身结构耐高温性能非常突出,在500～2500K温度范围内其红外辐射特征都能被抑制,同时,红外辐射的角度选择性也很好,75°范围内时5～8μm和8～14μm波段辐射特性无明显变化。该工作为新型耐高温波长选择性宽带红外隐身技术提供了一个新的途径。     

一种新型中红外材料及其隐身功能研究

随着红外技术与光电对抗技术的不断发展,对红外窗口的雷达隐身性能提出了很高的要求.介绍了一种中红外光学玻璃--氟镓酸盐玻璃IRG-05,以IRG-05为基质成功研制出了具有雷达隐身功能的中红外功能材料.与以往采用镀膜一刻蚀技术在表面制备周期性的金属网栅而实现的隐身功能的红外材料相比,这种雷达隐身红外材料在3～5μm波段有着更高的红外透过率和更加稳定的金属网栅.对红外晶体与红外玻璃直接复合以及由超强超快激光诱导实现的雷达隐身中红外材料的研制进行了展望.     

基于辐射对比度的变发射率舰船的红外隐身研究

利用固定发射率的红外隐身涂料无法实现全天候舰船红外隐身。以小于0.04的目标与背景的辐射对比度作为红外隐身的评判标准,通过计算分析目标与背景的红外特征模型,得到了实现红外隐身所需的目标表面发射率变化范围,提出利用电致变色材料来改变目标表面的平均发射率。与固定发射率的普通红外隐身涂料相比,改变发射率后的红外隐身涂料的隐身效率有了很大的改善,基本能满足目标的全天候红外隐身要求。     

红外隐身技术与发展

红外隐身技术通过降低和改变目标的红外辐射特征，实现对目标的低可探测性。综述了国内外红外隐身材料的发展历程。最后指出了红外隐身的发展方向。     

飞机红外隐身技术研究

随着红外探测技术和精确制导武器的发展,飞机要想在日益复杂的战场环境中保持和提高生存能力,必须综合采取各种隐身措施。针对飞机的红外辐射特征、辐射机理展开探讨,对飞机的红外隐身措施进行了总结。最后,结合国外的红外隐身技术和隐身材料的发展现状,展望了未来红外隐身技术的发展趋势。     

红外与雷达复合隐身研究

本文从材料的角度分析了红外隐身和雷达隐身各自需要的条件,指出在采用分层涂覆法时,红外与雷达复合隐身的技术关键是在满足红外隐身层目标低发射率的同时,能让雷达波顺利穿透该层,使雷达波进入雷达隐身层而被有效耗散.最后介绍了用掺杂半导体材料和纳米材料实现红外与雷达复合隐身的可能性.     

红外目标隐身的计算机仿真

红外目标能否实现隐身决于（１）目标及其所处背景的红外辐射特性（包括传输介质的特性）和（２）红外系统的探测与识别能力，本文介绍了红外目标隐身仿真的基本内容，论述了目标和背景红外源辐射的仿真建模及红外目标隐身软件系统的设计思想和总体规划。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its