聚合物电致发光显示板

报导聚合物有机电致发光器件在研究和开发方面的最新进展。介绍新型的空穴输送聚合物和电子输送聚合物。最后讨论多色聚合物ＥＬ器件实现的可能性。     

有机电致发光显示器件的研制及产品开发现状

阐明了有机电致发光（ＥＬ）显示器件的基本结构和工作机理,对比了无源矩阵和有源矩阵两种有机ＥＬ器件驱动方式,总结了有机ＥＬ器件的制作工艺。展示了现有的有机ＥＬ产品和各大研究机构的最新成果,并且对有机电致发光现象发现以来的专利情况做了图表式总结。     

有机电致发光器件的研究及专利

介绍了国外正蓬勃开展研究的有机电致发光（ＥＬ）器件的研究发展过程、器件结构、制作和发光机理,报道了１９８９～１９９７年日本公开的专利申请、１９８９～１９９６年美国专利授权中有关有机和无机ＥＬ器件的情况,列出了世界上从事有机ＥＬ器件研究的主要公司及其专利申请,展现了ＥＬ器件的发展趋势。     

有机电致发光数码显示器件的初步研究

用改进的电子束蒸发系统制作了结构为ＩＴＯ／ＣｕＰｃ／ＴＰＤ／Ａ１ｑ３／ＭｇＡｇ的有机ＥＬ数码显示器件,并对器件进行了实用化封装,测量了器件的Ｂ－Ｖ曲线和电致发光光谱。研究了使用直汉方式和交流方式驱动下器件的性能,证明了使用交流方式驱动的有机电致发光器件较直流昔使用寿命得以大大提高。     

深亚微米MOSFET二维数值模拟的若干结果

对溶亚微米器件，由于工作电压下降，要求重新确定ＬＤＤ和常规ＭＯＳＦＥＴ在ＶＬＳＩ中的作用。本文从基本器件数理方程发出，对深亚微米常规及ＬＤＤ ＭＯＳＦＥＴ的器件特性、热载流子效应及短沟道效应进行了二维稳态数值模拟，指出了常规和ＬＤＤ ＭＯＳＦＥＴ各自的局限性，明确了在深亚微米ＶＬＳＩ中，ＬＤＤ仍然起主要作用。     

有机固体中的能量传递与有机电致发光

有机固体中的能量传递与有机电致发光李文连（中国科学院长春物理研究所，长春１３００２１）１前言在研究有机及聚合物电致发光（以下简称有机ＥＬ）过程中，离不开有机固体薄膜中的能量传递现象。在某种意义上讲，有机ＥＬ的光辐射过程就是激发能在薄膜中的能量传递及...     

MOCVD技术制备ZnS：MnACTFEL器件的进展

本文综述了用金属有机物化学气相沉积（ＭＯＣＶＤ）技术制备ＺｎＳ：Ｍｎ交流薄膜电致发光（ＡＣＴＦＥＬ）器件的发展历史及研究现状，对各种改进技术和使用的原材料进行了比较，并指出进一步的研究方向。     

有机薄膜电致发光的回顾和展望

综述了有机薄膜电致发光（ＯＴＦＥＬ）的发展过程，总结了ＯＴＦＥＬ的四种器件结构和工作原理，介绍了器件的制备并了选择有机发光材料的基本原则，文末展望了ＯＴＦＥＬ的应用前景。     

半导体光电子器件的研究进展

文章综述ＣＬＥＯ’９４及ＩＱＥＣ’９４会议报道的有关光电子器件的发展状况，叙述了大功率ＬＤ、蓝绿光ＬＤ、垂直腔面发射半导体激光器、可调谐ＬＤ及ＯＥＩＣ的最新研究进展。     

π——共轭高分子光电性能及聚合物LED

π—共轭高分子光电性能及聚合物ＬＥＤ李文连（中国科学院长春物理研究所，长春１３００２１）（中国科学院激发态物理开放实验室，长春１３００２１）１引言自从Ｃ．Ｗ．Ｔａｎｇ［１］报道了由８—羟基喹啉铝与芳香二胺作为传输材料的积层型电致发光（ＥＬ）器件以来...     

Luminescent Efficiency in Single-layer Organic Electrophosphorescent Devices

Based on the charge injection and recombination processes and the triplet-triplet annihilation process, a model to calculate the electro.luminescent（EL） efficiency is presented. The influences of the applied electric field on the injection efficiency, recombination efficiency and electroluminescent efficiency are discussed. It is found that： （1） The injection efficiency is increasing while the recombination efficiency is decreasing with the applied electric field increasing. （2） The EL efficiency is enhanced at low electric field slowly but is decreasing at high electric field with the increase of applied voltage. （3） The EL efficiency is decreasing with the increase of the host-guest molecular distance （R）. So, it is concluded that the EL efficiency in single-layer organic electrophosphorescent devices is dominated by injection efficiency at lower electric field and recombination efficiency at higher electric field.     

Temperature behavior of visible and infrared electroluminescentdevices fabricated on erbium-doped GaN

Visible and infrared (IR) rare-earth-activated light emission has been obtained from Er-doped GaN electroluminescent devices (ELD). The ELD consists of an in-situ Er-doped GaN layer grown on either a sapphire or silicon (Si) substrate. The temperature dependence of the light emission and the current conduction is reported. The EL spectrum shows two main visible peaks at 537 and 558 nm and a group of closely spaced IR peaks clustered around 1550 nm. The 558 nm visible transition is dominant below 250 K, whereas the 537 nm transition is dominant at higher temperature peaking at 300 K. Temperatures from 240-500 K have minimal effect on IR emission intensity. A simple model consisting of two back-to-back Schottky diodes explains the current-voltage dependence. The effect of Er doping and substrate type on carrier transport is investigated as a function of voltage and temperature. Specifically, there is evidence that an Er-related defect is responsible for carrier generation at temperatures above 300 K. The effect of bias polarity on spatial confinement of the light emission in different areas of the devices is discussed. The model indicates that both electric field intensity and current density are important in producing light emission. The model also accounts for the uniformity of the emission under the electrodes when considering the type of substrate used for GaN:Er device growth     

Operation and power dissipation of thin-film transistor-controlled electroluminescent displays

The operation of the thin-film transistor-controlled electroluminescent (TFT-EL) display panel was analyzed and the power dissipation under different conditions calculated. A hybrid electronic multiplier was used to measure the dissipation of individual electroluminescent (EL) cells, TFT-EL elements, and TFT-EL panels. The results of these measurements and the luminous efficiency of the EL material are presented.     

新型芴-咔唑共聚物电致发光性质的研究

研究了一种新型的芴与咔唑交替共聚合物材料的电致发光(EL)特性,制备了2种不同结构的器件,分别为indium-tin-oxide(ITO)/polymer/tris-(8-hydroxyquinoline)-alumium(Alq3)/Mg:Ag和ITO/polymer/bathocuproine(BCP)/Alq3/Mg:Ag.实验结果表明;前者发射绿色光,为Alq3的本征发光,聚合物起空穴传输层(HTL)的作用;后者发射蓝色光,EL谱与聚合物材料的光致发光(PL)谱一致,说明这种共聚物除了可用做空穴传输材料外,本身亦可做为优良的OLED蓝色发光材料.     

有机小分子掺杂的聚合物共混发光二极管

报道了用可溶性发光材料聚（２,５－二丁氧基苯）做发光材料,分别与母体聚合物聚乙烯基咔唑（ＰＶＫ）和聚甲基丙烯酸甲脂（ＰＭＭＡ）共混,并掺杂电子传输材料叔丁基联苯基苯基口恶二唑和空穴传输材料二胺衍生物作发光层,用铟锡氧化物和铝分别作正负电极,制作了两种蓝紫光有机／聚合物单层发光器件。通过比较两种器件的器件特性,发现以ＰＭＭＡ做母体的器件比用ＰＶＫ做母体的器件有更好的稳定性,器件开启电压为１０Ｖ左右,发光峰值波长均位于４２４ｎｍ,电致发光效率可达２．９％,比用ＰＶＫ做母体的器件效率高一倍多。     

聚合物电致发光器件中用类金刚石碳膜增强电子注入

用正丁胺作碳源,采用射频辉光等离子系统制备类金刚石碳膜(DLC),沉积在聚合物发光器件中的发光层(MEH-PPV)和铝(Al)阴极间作电子注入层.制备了结构为ITO/MEH-PPV/DLC/Al的不同DLC厚度的器件,测量了器件的I-V特性、亮度及效率,研究了DLC层对器件电子注入性能影响的机制.结果表明:当DLC厚度小于1.0nm时,其器件有较ITO/MEH-PPV/Al高的启动电压和低的发光效率;当DLC厚度在1.0～5.0nm之间时,器件的性能随着DLC厚度增加而变好;当DLC厚度为5.0nm时,器件具有最低的启动电压与最高的发光效率;当DLC厚度继续增加时,器件的性能随着DLC厚度增加而变差.并对ITO/MEH-PPV/DLC/Al和ITO/MEH-PPV/LiF/Al的器件性能进行了比较研究.     

Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices

用正丁胺作碳源,采用射频辉光等离子系统制备类金刚石碳膜(DLC),沉积在聚合物发光器件中的发光层(MEH-PPV)和铝(Al)阴极间作电子注入层.制备了结构为ITO/MEH-PPV/DLC/Al的不同DLC厚度的器件,测量了器件的I-V特性、亮度及效率,研究了DLC层对器件电子注入性能影响的机制.结果表明:当DLC厚度小于1.0nm时,其器件有较ITO/MEH-PPV/Al高的启动电压和低的发光效率;当DLC厚度在1.0～5.0nm之间时,器件的性能随着DLC厚度增加而变好;当DLC厚度为5.0nm时,器件具有最低的启动电压与最高的发光效率;当DLC厚度继续增加时,器件的性能随着DLC厚度增加而变差.并对ITO/MEH-PPV/DLC/Al和ITO/MEH-PPV/LiF/Al的器件性能进行了比较研究.     

Microcavity polymer electroluminescent devices with solution-processed dielectric distributed Bragg reflectors utilizing inorganic copper (I) thiocyanate and insulating polymers

The concept of using printed inorganic/organic hybrid distributed Bragg reflectors (DBRs) utilizing inorganic semiconductor and insulating polymers in microcavity polymer electroluminescent devices is introduced to provide an approach to achieve the spectral narrowing and the strong forward directionality. The large refractive index contrast of approximately 0.5 (0.44) between inorganic copper(I) thiocyanate, CuSCN, and insulating polymer of poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE) (cellulose acetate, CA) results in the fabrication of solution-processed inorganic-organic hybrid dielectric DBRs with high reflectivity (>90%) from nanostructures consisting of only four (five) bilayers. For DBRs composed of CuSCN/CA alternative dielectric layers, all-solution processed microcavity polymer light-emitting diode based on highly conductive poly(ethylenedioxythiophene):poly(styrenesulfonate) anode except for Ag cathode exhibits the narrowing of EL spectrum with a full width at half maximum of approximately 25 nm and the maximum luminance of above 10,000 cd/m². From the viewpoint of dielectric DBRs based on ferroelectric polymer P(VDF-TrFE) with both low refractivity and high permittivity, we demonstrate a microcavity AC voltage-driven polymer electroluminescent device (μcACEL) which exhibits the spectral narrowing and the strong forward directionality. This work is anticipated to be useful for the development of solution-processed μcACEL with unique device architecture.     

有机无机复合膜发光器件的研究

针对聚合物电致发光（EL）材料缺乏可用的电子型聚合物半导体材料的现状，采用无机电子型半导体材料ZnO：Zn与空穴型聚合物材料poly（2，5bis（dodecyloxy）-phenylenevinylene）（PDDOPV）成功制备了结构为ITO／PDDOPV／ZnO：Zn／Al的有机／无机复合膜双层器件。复合膜器件的发光效率与亮度比单层器件提高了1个数量级以上，而复合膜的电流是单层器件的0．5倍。而且，聚合物／无机物复合膜器件的发光颜色随电压的增加而蓝移，其光致发光（PL）光谱也随激发波长的改变而改变，有可能形成了新的发光基团。     

有机电致发光材料的研究进展

有机电致发光(OEL)是近年来国际上的一个研究热点。有机电致发光器件具有低压驱动、高亮度、高效率以及能实现大面积彩色显示等优点。介绍了有机电致发光材料特别是金属配合物和聚合物材料的国内外研究进展，并在此基础上探讨了分子结构与发光性能的关系．