全局与局部特征融合在人脸识别中的应用研究

摘　要 主成分分析（PCA）和线性判别分析（LDA）是基于全局结构的特征提取方法,局部保持投影（LPP）和正交拉普拉斯脸（OLF）是基于局部结构的特征提取方法,全局结构特征的弱点是忽略了局部结构特征,局部结构特征的弱点是忽略了整体结构。基于此,本文提出了一种全局与局部结构特征融合（GLSF）的提取方法,将PCA和LDA的提取结果融合到LPP中,既描述了全局结构,又考虑了局部结构。在ORL及Yale上的实验结果表明,GLSF方法比PCA、LDA、LPP、OLF等方法具有更高的识别率。     

基于核方法的探地雷达目标特征提取方法

把核方法引入探地雷达目标特征提取中,先对雷达特征数据进行基于核的非线性变换投影到高维空间;然后在高维空间应用传统的探地雷达目标特征提取方法（LDA方法和PCA方法）提取雷达数据特征。对PCA、LDA、基于核方法的PCA和基于核方法的LDA四种探地雷达目标特征提取方法进行对比研究,对实测数据处理的结果表明：无监督的学习方法不适合探地雷达目标特征提取,所提基于核方法的LDA探地雷达目标特征提取方法效果最好。并详细阐述了基于核方法的LDA探地雷达目标特征提取方法。     

基于融合DCT和LBP特征提取的面部表情识别

针对离散余弦变换(DCT)只能提取面部表情图像的全局特征,而忽略了临近像素之间的关系、不能提取纹理特征信息、不能准确区分相似表情等问题,提出一种融合离散余弦变换方法和局部二值模式(LBP)特征的表情特征提取方法。该方法首先将人脸图像经过DCT获得的低频系数作为表情的全局特征;然后用LBP对贡献率较大的嘴部、眼睛区域进行局部纹理特征提取,通过将LBP提取到的局部纹理特征与DCT提取到的全局特征进行融合,从而得到更有效的表情特征;最后利用支持向量机(SVM)进行识别。实验结果表明:该方法比单独使用DCT方法提取的表情特征更有利于识别,提高了表情识别的准确性,并将这个表情识别方法用于智能轮椅的控制上,收到了良好的效果。     

基于巴氏距离和LPP相结合的人脸识别

局部保持映射(Locality Preserving Projection,LPP)算法是一种有效的特征提取方法。提出了利用巴氏距离和LPP相合算法对特征进行提取。当特征维数过高时,首先对样本用LPP进行特征提取和降维处理,然后采用巴氏距离特征的迭代算法,得到最小错误率上界。在ORL上实验,实验结果表明了提出算法在人脸识别中的有效性。     

基于局部保持投影和核直接判别分析的掌纹识别

为了提高识别性能,提出运用局部保持投影(LPP)和核直接判别分析(KDDA)相结合的方法进行掌纹识别.在小样本图像识别中,为了解决特征方程矩阵的奇异性,首先运用图像下抽样降低掌纹空间的维数,然后应用LPP提取掌纹局部结构特征作为KDDA的输入提取分类特征,计算特征向量间的余弦距离进行掌纹匹配.运用PolyU掌纹图像库,...     

基于PCA和LDA融合算法的性别鉴别

结合主元分析(PCA)与线性鉴别分析(LDA)的特点,利用PCA-LDA算法进行性别鉴别.通过PCA算法求得训练样本的特征子空间.并在此基础上计算出LDA算法的特征子空间.将PCA算法与LDA算法的特征予空间进行融合,获得PCA-LDA算法的融合特征空间.训练样本与测试样本分别朝融合特征空间投影,从而得到识别特征.利用最近邻准则即可完成性别鉴别.实验中利用三种预处理方法(PCA+LDA、HG+PCA+LDA、RHG+PCA+LDA),得出各自的实验结果,并进行比较.实验结果表明,利用RHG+PCA+LDA方法预处理后,使用PCA-LDA算法进行性别鉴别可以得到理想的效果.     

基于局部保持判别子空间的ISAR目标识别

由于目标运动及其所处环境的复杂性,雷达目标数据之间往往呈现出局部的非线性,如果采用传统的线性子空间方法降维,必将会使雷达目标识别性能有所下降,基于以上原因,文章尝试将流形学习的思想应用于逆合成孔径雷达(ISAR,inverse synthetic aperture radar)目标二维像的目标识别.局部保持投影(LPP,locality preserving projections)是一类有效的流形学习算法,但它在构建权矩阵时没有充分利用样本的类别信息.针对此问题,提出了一种称为局部保持判别投影(LP-DP,locality preserving discriminant projections)的子空间学习方法,该方法通过构建类内和类间两个权矩阵来描述多类样本数据集的局部几何结构,以使在高维空间中相互靠近的同类数据点在低维嵌入空间中也相互靠近,而不同类的近邻点则尽可能地远离.对三类飞机目标的仿真实验结果表明,与PCA、LDA和LPP等算法相比,LPDP算法具有更好的识别性能.     

多粒度特征融合的行人再识别研究

结合全局特征和局部特征是提高行人再识别精度的一种途径。现有的算法通常从人体特定的语义区域提取特征,由于没有将人体结构考虑在内,增加了学习难度,在差异较大的场景下效率和鲁棒性较差。为了较好地解决上述问题,本文提出一种融合了全局特征、局部特征以及人体结构特征的多粒度特征融合的行人再识别算法。本算法不引入任何人体结构先验知识,在特征提取方面,采用均值池化和最大池化对特征图加权得到强辨识性的全局特征。对特征图切片得到局部特征,在原有局部特征的基础上,引入局部相对特征作为人体结构特征。在度量方面,采用三元组损失与ID损失在不同尺度下的多级监督机制。在Market1501、DukeMTMC-reID的实验表明,算法的Rank-1指标相比于部分卷积基线(PCB)方法提升了1.3%、3.9%,平均精度均值(mAP)提升了5.1%、9.8%。     

基于判别邻域嵌入的人脸识别

提出了一种人脸识别子空间方法:判别邻域嵌入(DNE).在框架中,训练样本数据的邻域和类关系被用来构建低维嵌入流形.在嵌入低维子空间后,同类样本保持它们固有的邻域关系,相反不同类近邻样本彼此远离.在ORL和Yale人脸数据库上,对提出的方法和主成分分析(PCA)、线性判别分析(LDA)、保持邻域嵌入(NPE)和保持局部投影(LPP)方法进行了比较,结果表明,提出的方法是有效的.     

基于Gabor的特征提取算法在人脸识别中的应用

针对人脸识别中的特征提取问题,提出一种新的基于Gabor的特征提取算法,利用Gabor小波变换良好的提取区分能力和LDA所具有的判别性优势来进行特征提取。首先利用Gabor小波变换来提取人脸特征。然后对得到的高维特征采用PCA进行初次降维,再利用LDA实现再次降维,得到最终的特征向量。在ORL和YALE人脸库上的实验验证了该算法的有效性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.