一种220 GHz波导-悬置微带线过渡电路设计

波导-微带过渡电路是连接毫米波、太赫兹系统中平面电路与波导的重要结构,直接影响系统性能。设计了一种中心频率220 GHz的矩形波导-悬置微带线过渡电路。过渡采用探针耦合的形式,并使用渐变线结构实现宽带阻抗匹配,这种结构具有结构紧凑,易于加工,宽带和插入损耗低等优点。最终的仿真结果表明：在180~255 GHz的频带内回波损耗优于20 dB,插入损耗小于0.18 dB。这种结构可广泛应用于毫米波、太赫兹平面电路中。     

MMIC芯片衰减器的设计与检测

本文提供了一种单片微波集成电路(MMIC)芯片衰减器,采用氮化钽薄膜作为电阻材料,利用嵌套掩膜刻蚀技术将芯片衰减器结构一层一层套刻在陶瓷基片上。主要研究了利用氮化钽薄膜电阻制作芯片衰减器的优点,结合HFSS仿真软件,建立3 dB和10 dB芯片衰减器的有限元模型,并对实物产品进行测试验证。试验结果表明:3 dB芯片衰减器在DC～20 GHz工作频率内有较好的衰减响应,回波损耗在整个宽频带内都小于-20 dB,衰减量偏差在DC～12 GHz工作频率内小于±0.3 dB。10 dB芯片衰减器在DC～20 GHz工作频率内也有较好的衰减响应,回波损耗在整个宽频带内都小于-19 dB,衰减量偏差在DC～12 GHz工作频率内小于±0.35 dB。     

一种采用砷化镓pHEMT工艺的超宽带DC-40GHz 4位单片数字衰减器

介绍了一种超宽带DC-40GHz的4位单片数字衰减器。该衰减器采用0.25μm砷化镓pHEMT工艺制造。据我所知,这种衰减器是至今国内文献报道中带宽最宽的。它通过采用适当的结构来得到超宽的带宽、低插入损耗以及高衰减精度。该衰减器具有1 dB的衰减步进和15 dB的衰减动态范围,插入损耗在40 GHz时小于5 dB,全衰减态及全频带内的输入输出回波损耗大于12 dB。     

基于脊波导结构的太赫兹超宽带双工器设计

在射电天文领域,为了实现更宽频带内多谱线同时观测任务,要求太赫兹超导相干接收机向更宽带方向发展。针对下一代太赫兹超宽带接收机的应用需求,提出了一种频段覆盖180~ 420 GHz(相对带宽达87%)的超宽带脊波导双工器设计,主要包括：180~300 GHz频段和320~420 GHz频段宽带脊波导滤波器设计与变换;超宽带太赫兹多级耦合型脊波导双工器优化设计。仿真结果表明该结构能够在180~300 GHz和320~420 GHz频段双工工作,回波损耗整体优于15 dB,通道间隔离度达20 dB以上。     

GaN MMIC六位数字衰减器的设计

基于GaN HEMT工艺成功研制出一款宽带六位数字衰减器,衰减范围为0～31.5 dB.通过研究GaN HEMT开关器件模型及电阻式衰减网络,选取合适的衰减器拓扑,减小了衰减器的插入损耗,提高了衰减精度,缩小了芯片尺寸.测试结果表明,在2～ 18 GHz频带内,该衰减器的插入损耗小于4.8 dB,64态衰减精度均方根误差小于0.6 dB,输入回波损耗小于-13 dB,输出回波损耗小于-12.5 dB,附加相移为-14°～4°.在10 GHz下,其1 dB压缩点输入功率达到34.5 dBm.裸片尺寸为2.30 mm× 1.10 mm.     

小孔耦合型双通道太赫兹波导定向耦合器设计

提出了一种小孔耦合型双通道太赫兹波导定向耦合器,采用新颖的阶梯结构,将两个单通道耦合器结合,可在双通道内实现相同的耦合输出。研究结果表明,在180~260 GHz的频率范围内,该耦合器的耦合度为10 dB,输出最大误差小于1.6 dB,回波损耗大于25 dB,隔离度大于35 dB,相对带宽达到36%。与传统的太赫兹波导定向耦合器相比,该耦合器能够实现双通道的耦合输出,在太赫兹系统中可用于双通道的功率检测、功率合成与分配。     

一种W波段介质密封型的波导-微带转换结构

提出了一种W波段波导-微带转换结构。该转换结构采用探针耦合转换的形式实现微波信号从矩形波导(BJ-900)到微带传输线的转换,并利用介质板实现波导口的密封。设计制作背靠背转换结构,在75~105GHz频率范围内测试结果:回波损耗优于-10dB,插入损耗小于3dB,泄漏率小于1×10-9Pa·m3/s。     

一种晶圆级封装的MEMS数控衰减器

设计实现了一种晶圆级封装的三位MEMS数控衰减器，工作频段DC～15 GHz，衰减范围0～35 dB，步进5 dB。衰减器采用MEMS工艺实现，信号传输采用共面波导（CPW）结构，6个直接接触式悬臂梁MEMS开关对称放置实现不同衰减量的切换，每个开关带有三个触点，电阻网络采用T型结构，整个衰减器实现晶圆级封装。测试结果显示，DC～15 GHz频段内实现了8个衰减态，衰减器插入损耗小于1.7 dB，回波损耗小于-15 dB，衰减平坦度小于±5%，功耗几乎为零。芯片尺寸为2.7 mm×2.7 mm×0.8 mm。     

一种X波段低附加相位的6位单片数控衰减器

提出了一种X波段低附加相位的6位单片数控衰减器。采用一种改进型开关T型衰减网络,实现了2 dB与4 dB的衰减位。网络在整个带宽内具有良好的附加相位特性。其他各衰减位采用了基于传输线的相位补偿结构。该6位单片数控衰减器基于0.25 μm GaAs工艺进行流片与验证,芯片面积为(2.2×1.4) mm²。测试结果表明,在整个带宽内,该数控衰减器的插损小于4.1 dB,输入输出回波损耗小于-10.7 dB,RMS幅度误差小于0.26 dB,RMS相位误差小于2.4°。     

太赫兹功率放大单片封装技术研究

本文对太赫兹功率放大单片封装技术进行研究，主要包括波导-微带垂直过渡和模块内的模式谐振抑制技术.不同于常规的矩形探针平面过渡，本文提出了一种基于分叉探针的垂直过渡结构，适用于多层电路排布的系统/模块封装，并在WR-4波导频段（170～260 GHz）进行了背靠背结构的实验验证，在整个波导频带内，回波损耗优于16 dB，单个过渡的插入损耗约0.42 dB，这包括了波导模块接触不良造成的额外的损耗.为进一步降低过渡损耗，提出了一种开口谐振环结构，用来抑制不良接触导致的电磁泄漏，使过渡损耗降低为原来的一半.此外，为避免功率放大模块内部发生模式谐振，提出将电磁带隙结构设置在平面传输线的上腔来抑制高次模的激励、传输和谐振.应用上述技术对工作于210～230 GHz的功率放大单片进行封装及测试.在210 GHz，小信号增益达到最大值20.75 dB，单端封装损耗约0.8 dB；在217 GHz达到最大输出功率15.6 dBm，与芯片手册数据吻合较好.     

一种毫米波梳状鳍线电调衰减器的研究与实现

为实现毫米波信号功率电平控制,设计出一种电调衰减器,衰减器传输线为波导鳍线形式,通过在鳍线槽缝中并联PIN二极管实现衰减,另外,为了抑制波导与鳍线夹缝中的能量泄露,采用了一种新型纵向的梳状结构进行改善。整个电路结构紧凑,易于加工实现,经过仿真、优化并实测,在Ka波段1 GHz 带宽内插损不超过2 dB,最大衰减量可达32 dB,衰减性能良好。     

Wideband planar lightwave circuit type variable optical attenuator using phase-generating coupler

A novel wideband planar lightwave circuit type variable optical attenuator (VOA) that incorporates a phase-generating coupler is proposed. The proposed VOA was fabricated on a 1.5%-/spl Delta/ silica-based waveguide, and obtained a low insertion loss of less than 1.2 dB and a low wavelength dependent loss of less than 0.8 dB at attenuation levels of 0 to 25 dB over the C- and L-band wavelength range.     

Variable optical attenuator based on a cutoff modulator withtapered waveguides in polymers

A variable optical attenuator was demonstrated by using a thermooptic cutoff modulator in polymers. It combined horizontally and vertically tapered waveguide structures to improve both the attenuation efficiency and the fiber coupling. The rib height of the waveguides in the input and output region was chosen to achieve minimum fiber coupling loss. For the waveguide in the active region with the electrodes, the rib height was reduced and the width was tapered in order to enhance the attenuation performance by weakening the mode confinement. The two waveguides with different rib heights were connected smoothly by employing a vertical taper, which was realized by utilizing two steps of reactive ion etching with a shadow mask. Then a fiber coupler built in a silicon block was attached directly to the output end of the device. A fraction of the main attenuator output was tapped and fed back to the electrical driver to achieve constant output regardless of variations in input light power and polarization. The measured insertion loss of the attenuator was 2.5 dB at 1550 nm. The dynamic range was more than 20 dB with an electrical power consumption of 160 mW. And the optical response time was faster than 1.5 ms. The effect of polarization on the attenuation was reduced to 0.1 dB by employing a continuous electronic feedback control. The wavelength uniformity was as small as 0.3 dB over the range from 1530 to 1560 nm. Finally, the attenuator was successfully used to regulate channel powers within 0.4 dB in a wavelength division multiplexed transmission system     

基于石英衬底的16通道二氧化硅可调复用器/解复用器的单片集成

本文是关于可调复用器/解复用器的单片集成,它由一个16通道200 GHZ的二氧化硅阵列波导光栅和一组马赫增德尔干涉型热光可调光衰减器阵列构成。该集成器件是基于石英衬底的,与基于硅衬底的器件相比,省去了沉积下包层的工艺步骤,并且降低了器件功耗。该集成器件的插入损耗是-5 dB,串扰小于-22 dB。在衰减为20 dB的时候每个通道的功耗只有110 mW。     

聚合物热光可变光衰减器

提出一种旁路结构聚合物热光可变光衰减器 (variable optical attenuator,VOA)的设计 ,采用旁路波导可提高衰减效率并降低串扰 .软件模拟验证 ,无间距旁路 VOA衰减可达 2 8d B,比未加旁路波导的相同结构 VOA增加10 d B,但同时插入损耗增加 0 .3d B,串扰低于 - 4 4 d B,理论功耗为 4 0 m W.采用倒脊形结构研制了原理性的热光聚合物 VOA,测得衰减大于 11d B,相应输入电流为 6 6 m A,具有明显的热光效应 .     

0.22 THz Waveguide Bandpass Filter with High Stop-Band Suppression

A terahertz (THz) waveguide band-pass filter using an iris inductive window coupled structure was designed and fabricated. The filter was designed at 0.22 THz with a pass band of 20 GHz. The measured results show that the center frequency is 0.218 THz with a pass band of 0.205 THz to 0.231 THz, the minimum insertion loss is 1.26 dB at 0.224 THz, and the return loss is less than 13.1 dB. The stop-band suppression is 65.6 dB at 0.193 THz and 51.8 dB at 0.243 THz, respectively, which means a good performance of high stop-band suppression. A good agreement exists between the measured S-parameters and the simulated ones, especially in the upper band. The proposed THz waveguide filter has potential applications in THz communications.     

Variable optical attenuator for large-scale integration

A polymer thermooptic variable optical attenuator (VOA) was designed and demonstrated for dense waveguide device integration. The waveguide bend design is compatible with photolithography fabrication techniques and operates by controlling waveguide bend radiation loss. The design optimizes the compromise between integration capability, integration cost, and attenuation efficiency. For a 5 mm bend length, optical attenuation of >40 dB has been achieved with an applied electrical power of 250 mW. The fiber-to-fiber insertion loss was 1.5 dB for a 20-mm total waveguide length. The design's compact size makes it practical for both VOA arrays and dense integrated optical circuits     

MEMS可调式光衰减器性能测试及其分析

采用微细加工的方法研制出了一种可调式微机械光衰减器 ,对该衰减器的性能进行了测试 ,并对影响其光学性能的因素作了分析。测试表明 ,该衰减器的插入损耗<3dB ,衰减范围 0～ 4 0dB ,回波损耗 <- 45dB ,衰减精度可达 0 1dB。     

太赫兹宽带分谐波混频器设计

太赫兹分谐波混频器的变频损耗、噪声系数等指标与基波混频器相近,且本振频率为射频频率的一半,大大 降低了本振源的设计难度和制作成本,是高性能太赫兹接收前端的关键部件。本文介绍了一种覆盖全波导带宽的太赫 兹宽带分谐波混频器的设计,对电路中射频波导至悬置带线过渡结构和本振中频双工器进行仿真和优化设计。并以 0.14~0.22THz 分谐波混频器为例进行设计和制作,测试结果表明0.14 ~0.22THz 分谐波混频器在全波导频段内最大变频 损耗低于15dB,中频3dB 带宽大于20GHz。     

Design and Analysis of an Ultra-Compact and Ultra-Wideband Polarization Beam Splitter Based on Coupled Plasmonic Waveguide Arrays

We present the design of an ultra-compact polarization beam splitter where three symmetrical dielectric channel waveguides are hybrid integrated with Au plasmonic waveguide arrays. Ultra-wideband operation over 50 THz with the insertion loss less than 2 dB for both transverse electric and transverse magnetic mode are predicted. The extinction ratio is better than 15 dB for both polarizations and it is realizable on a chip size as small as 0.93times4.2 mum².