共查询到19条相似文献,搜索用时 171 毫秒
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提出了一种基于0.5μm5VCMOS工艺的低噪声PWM调制D类音频功率放大器。该放大器在5V电源电压下以全桥方式可以驱动4Ω负载输出2.5W功率;转换效率等于87%,信噪比达94dB(负载8Ω,输出功率1W);THD+N仅0.05%(负载4Ω,输出功率1W);PSRR为68dB(频率1kHz)。分析了整体电路结构及其线性化模型,并着重介绍了高性能前置斩波稳定运算放大器(开环增益117dB,等效输入噪声16μV.Hz-1/2),线性三角波振荡电路(斜率偏差仅±0.2%)和功率器件、驱动电路的设计。最后给出了D类放大器的测试结果。 相似文献
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报道了一款低噪声、低功耗、增益可调的音频功率放大器的设计. 该功率放大器在电源电压为5V,输入信号频率为1kHz,驱动负载为16Ω,输出功率为120mW时的总谐波失真仅为0.1%. 此音频功率放大器的增益允许以每台阶为15dB在+12~-34.5dB之间变化,共32个台阶,内部的放大器电路是该用于驱动耳机的音频功率放大器的核心. 介绍了功率放大器的电路结构、放大器的主要模块、最终版图和测试结果,最后此电路在上华0.6μm双层多晶硅、双层金属的CMOS工艺上实现. 相似文献
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报道了一款低噪声、低功耗、增益可调的音频功率放大器的设计.该功率放大器在电源电压为5V,输入信号频率为1kHz,驱动负载为16Ω,输出功率为120mW时的总谐波失真仅为0.1%.此音频功率放大器的增益允许以每台阶为1.5dB在 12~-34.5dB之间变化,共32个台阶,内部的放大器电路是该用于驱动耳机的音频功率放大器的核心.介绍了功率放大器的电路结构、放大器的主要模块、最终版图和测试结果,最后此电路在上华0.6μm双层多晶硅、双层金属的CMOS工艺上实现. 相似文献
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报道了一款低噪声、低功耗、增益可调的音频功率放大器的设计.该功率放大器在电源电压为5V,输入信号频率为1kHz,驱动负载为16Ω,输出功率为120mW时的总谐波失真仅为0.1%.此音频功率放大器的增益允许以每台阶为1.5dB在+12~-34.5dB之间变化,共32个台阶,内部的放大器电路是该用于驱动耳机的音频功率放大器的核心.介绍了功率放大器的电路结构、放大器的主要模块、最终版图和测试结果,最后此电路在上华0.6μm双层多晶硅、双层金属的CMOS工艺上实现. 相似文献
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MAX4297是一种立体声D类音频功率放大器。该放大器的特点:工作电压单电源2.7~5.5V;在5V供电时,每通道输出功率可达2W,在3V供电时每通道输出功率可达0.7W;在3V供电、负载阻抗RL=32Ω、输出功率在0.2W时,效率高达90%;总谐波失真加噪声(THD N)在输出功率0.2W、负载阻抗32Ω、工作电压为5V、开关频率为125kHz时为0.3%;PWM频率可选择(125kHz到1MHz分4种);有节电关闭模式,在关闭或重新启动时无“咔哒”声;内部有1A电流限制电路及过热(145℃)保护电路;有电源低压锁存保护(低于2.2V);24管脚SSOP封装;工作温度范围-40~85℃。该功放应用… 相似文献
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A class A/B BiCMOS power op-amp designed to drive the L/R load of a disk drive head actuator is presented. The amplifier uses totem pole NMOS outputs instead of bipolar devices to avoid the high collector resistance in the simplified process used. A unique floating buffer technique regulates the quiescent totem pole current of the output devices and provides control for deep triode NMOS operation. The amplifier is capable of driving a load in all four V-I quadrants without a deadband during transition, and achieves a 0.25 A drive capacity into a 7.5-Ω load using a 5-V supply 相似文献
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针对准第四代无线通信技术TD-LTE中2.570~2.620 GHz频段的应用,设计了一款基于IBM SiGe BiCMOS7WL工艺的射频功率放大器。该功率放大器工作于AB类,采用单端结构,由两级共发射极电路级联构成,带有基极镇流电阻,除两个谐振电感采用片外元件外,其他全部元件均片上集成,芯片面积为(1.004×0.736)mm2。测试结果表明,在3.3 V电源电压下,电路总消耗电流为109 mA,放大器的功率增益为16 dB,输出1 dB增益压缩点为15 dBm。该驱动放大器具有良好的输入匹配,工作稳定。 相似文献
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设计了一种0.13μm BiCMOS低压差线性稳压器(LDO),包括BiCMOS误差放大器、带软启动的BiCMOS带隙基准源、"套筒式"共源-共栅补偿电路等。为了改善线性瞬态响应性能,在BiCMOS误差放大器的前级设置了动态电流偏置电路。由于所设计的BiCMOS带隙基准源对温度的敏感性较小,故能为LDO提供高精度的基准电压。对所设计的LDO进行了工艺流片。流片测试结果表明,该LDO可提供60 mA的输出电流且最小压差只有100 mV。测试同时验证了所设计LDO的负载和瞬态响应都得到改善:负载调整率为0.054 mV/mA,线性调整率为0.014%,而芯片面积约为0.094 mm2,因此特别适用于高精度、便携式片上电源系统。 相似文献
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The authors present a 1.8 GHz class E power amplifier for wireless communications. A fully integrated class E power amplifier module was designed, fabricated and tested. The circuit was implemented in a self-aligned-gate, depletion mode 0.8 μm GaAs MESFET process. The amplifier delivers 23 dBm of power to the 50Ω load, with a power added efficiency of 57% at a supply voltage of 2.4 V 相似文献
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为了提高运算放大器的驱动能力,依据现有CMOS集成电路生产线,介绍一款新型BiCMOS集成运算放大电路设计,探讨BiCMOS工艺的特点。在s_Edit中进行“BiCMOS运放设计”电路设计,并对其电路各个器件参数进行调整,包括M0s器件的宽长比和电客电阻的值。完成电路设计后,在Tspice中进行电路的瞬态仿真,插入CMOS,PNP和NPN的工艺库,对电路所需的电源电压和输入信号幅度和频率进行设定调整,最终在W—Edit输出波形图。在MCNC0.5μm工艺平台上完成由MOs、双极型晶体管和电容构成的运算放大器版图设计。根据设计的版图,设计出BiCMOS相应的工艺流程,并提取各光刻工艺的掩模版。 相似文献
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Curvature-compensated BiCMOS bandgap with 1-V supply voltage 总被引:8,自引:0,他引:8
Malcovati P. Maloberti F. Fiocchi C. Pruzzi M. 《Solid-State Circuits, IEEE Journal of》2001,36(7):1076-1081
We present a bandgap circuit capable of generating a reference voltage of 0.53 V. The circuit, implemented In a submicron BiCMOS technology, operates with a supply voltage of 1 V, consuming 92 μW at room temperature. In the bandgap circuit proposed, we use a nonconventional operational amplifier which achieves virtually zero systematic offset, operating directly from the 1-V power supply. The bandgap architecture used allows a straightforward implementation of the curvature compensation method. The proposed circuit achieves 7.5 ppm/K of temperature coefficient and 212 ppm/V of supply voltage dependence, without requiring additional operational amplifiers or complex circuits for the curvature compensation 相似文献
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Sasaki K. Ishibashi K. Yamanaka T. Hashimoto N. Nishida T. Shimohigashi K. Hanamura S. Honjo S. 《Solid-State Circuits, IEEE Journal of》1989,24(5):1219-1225
A 1-Mbit CMOS static RAM (SRAM) with a typical address access time of 9 ns has been developed. A high-speed sense amplifier circuit, consisting of a three-stage PMOS cross-coupled sense amplifier with a CMOS preamplifier, is the key to the fast access time. A parallel-word-access redundancy architecture, which causes no access time penalty, was also incorporated. A polysilicon PMOS load memory cell, which had a large on-current-to-off-current ratio, gave a much lower soft-error rate than a conventional high-resistance polysilicon load cell. The 1-Mbit SRAM, fabricated using a half-micrometer, triple-poly, and double-metal CMOS technology, operated at a single supply voltage of 5 V. An on-chip power supply converter was incorporated in the SRAM to supply a partial internal supply voltage of 4 V to the high-performance half-micrometer MOS transistors.<> 相似文献
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A 1.2-μm VLSI BiCMOS technology has been used to implement a monolithic video track-and-hold amplifier that settles to an accuracy of 10 b in 15 ns. This level of performance is competitive with hybrid track-and-hold circuits and surpasses previously reported monolithic implementations by nearly two orders of magnitude. The amplifier's design is based on a closed-loop topology incorporating two BiCMOS folded-cascode gain stages, an NMOS sampling switch, and a BiCMOS switch driver with 1-ns transitions between ±4 V. The circuit operates from ±5-V power supplies and is capable of driving a 50-Ω load with ±1-V swings. For a fully differential implementation, the power dissipation is 1.2 W. The amplifier can be integrated either as a stand-alone track-and-hold circuit or as the front end of an analog-to-digital conversion system for video and high-speed instrumentation applications 相似文献
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介绍一种新的CMOS功率放大电路,该电路既有开关型放大器的高效率的特点,同时又具备线性功率放大电路能输出可变包络的特点,而且可以根据实际需要对输出功率进行调节。电路在0.6μm工艺线上流片。经测试验证电路能在-20°C~80°C的温度范围内工作,工作电压范围为2.5V~5.5V,输出功率可在很大范围内进行调节,在5V条件下,最大输出功率可达6.25W。 相似文献