基于SPI的CAN总线控制器与MCS-51单片机的接口设计

本文提出了一种基于SPI的cAN总线控制器与MCS-51单片机接口的智能节点设计方案.单片机通过模拟SPI接口实现对MCP2510的控制,从而实现CAN总线的通信.     

CAN智能节点的设计

CAN总线是一种流行的实时性现场总线 ,文中提出了一种基于MSP430单片机 ,并以MCP2510为CAN控制器的智能节点设计方案 ,该方案利用MSP430通过标准SPI接口可实现对MCP2510的控制 ,并能够完全实现CAN总线规范。     

基于CAN总线的数据采集与控制系统

介绍了一种基于CAN总线的数据采集与控制系统的设计方案，该方案采用内部带CAN控制器的51单片机P8xC591作为CAN总线上的智能节点，由上位机通过CAN网络来对各节点进行监控。文中给出了整个系统软件设计的主要程序段。     

基于ADμC812的CAN总线智能节点的设计

介绍了一种用单片机ADμC812、CAN总线控制器SJAl000和CAN总线驱动器POA82C250组成的CAN总线智能节点的设计方案，给出了该节点的硬件结构和软件设计方法，同时介绍了CAN总线的主要特点。     

四通道位置控制的CAN总线节点设计与实现

本文介绍了一种基于单片机系统的CAN总线接口系统，通过将CAN总线上的数字指令转换为模拟控制信号．送给已有的四路电动伺服模拟控制系统。该方案实现了四通道位置控制的CAN总线节点设计。     

基于μPD780822型单片机的客车CAN总线灯光节点设计与实现

采用μPD780822型单片机的CAN总线技术实现客车车灯控制和工作状态检测.介绍CAN总线和智能开关在客车车灯控制系统中的应用.给出节点的硬件设计方案,介绍节点控制软件的设计及实现.     

内带CAN控制器的P8xC591单片机

P8xC591是一款内带CAN控制器的8位高性能的微处理器。它采用了强大的80C51指令集并成功地包括了SJA1000CAN控制器的PeiiCAN的具体功能。P8xC591作为CAN总线上的一个智能节点应用于过程控制的集散系统中。P8xC591功能齐全,可设计成在最小数量的器件下工作,在过程控制中,是扩展CAN总线智能节点的理想器件。     

基于C8051F040的CAN总线智能节点的设计

CAN总线现在已被公认为是最有前途的现场总线之一。Cygnal公司的片上系统(SoC)级单片机C8051F040功能强大,代表了目前8位单片机控制系统的发展方向。详细介绍了基于C8051F040的CAN总线智能节点的硬件和软件设计,给出了详细的硬件原理图和软件流程,并提供了部分源代码。所给的硬件和软件设计方案已经全部通过了验证。     

基于CAN总线和无线技术的输液网络监控系统

为实现大中型医院静脉输液网络化与智能化,设计了一种利用CAN总线和无线技术的输液监控系统。该系统包括执行机节点、CAN总线网络、主节点、无线数据收发系统、控制主机等。无线通信模块采用2.4 G的nRF2401通信芯片,而CAN总线通信模块采用SJA1000和PCA82C250,通过单片机控制,实现与其他节点通信。试验表明所设计的CAN总线和无线通信系统均能正常工作,数据传输错误率为0%。     

CAN／RS232接口卡的设计与实现

详细叙述了一种利用AT89S51单片机和SJA1000总线控制器的CAN总线与RS 232接口卡的设计和实现方法;通过对串行通信协议的加强,设计了一种同步的串行通信协议.该接口卡可以方便地建立起计算机与CAN总线之间的通信,能够使CAN总线的设计者方便地观察总线的运行情况和各个节点所发送的数据.实际运行证实了其可靠性和易用性.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.