L波段90kW固态发射机的设计

介绍了某雷达集中式大功率固态发射机功放组件、功率分配／合成器、电源系统、控制监控单元、结构冷却系统的设计,分析了电路对称性对发射机合成效率的影响。     

高功率发射机结构及其动力学分析

一种由4只大功率功放电源机柜、1只水冷机柜、1只大功率合成器组成的舰载雷达高功率固态发射机,其大功率功放电源机柜上部浮动安装了功放组件功率合成器,微波功率从顶部输出,机柜安装误差可以补偿.大功率功放电源机柜可根据功率和结构布局进行组合,通用性强.并且4只大功率功放电源机柜对称布局,相互间刚性连接,实现了微波大功率的最优合成.文中针对舰载环境要求,建立了发射机结构分析的有限元模型,进行了动力学分析.     

大功率固态功放合成效率研究

应用散射参数理论对大功率合成器的合成效率进行了计算推导,分析了合成效率的各种影响因素,推导出合成效率所能达到的最大值,并且给出最大合成效率的条件.这对于进行S频段连续波800 W固态功放研制打下很好的理论基础.     

S波段大功率合成器

S波段大功率合成器是某雷达固态发射机攻关技术之一。研制成功的大功率合成器除具有损耗小、分配比平衡、隔离度高、相位一致性好、承受功率大等特点外，还具有连接方便、结构紧凑的特点。该大功率合成器很好地解决了发射机合成中的关键问题。     

C波段GaN固态功放及其功率合成器研制北大核心CSCD

介绍了一种C波段高功率高效率GaN固态功率放大器及其径向同轴功率合成器研究成果,基于该功率合成器设计出一种C波段输出功率110 W(CW)、效率40%的高效率GaN功率放大器。实验测试结果:表明采用四路C波段30 W GaN功放径向同轴功率合成方法,其功率合成效率达93%,解决了实际工程应用中C波段高功率微波功率放大器的高效率问题,为下一步研制更高性能高效率高功率固态功率放大器探索出一种可行的技术方法。     

Ku波段宽带大功率多芯片合成设计

设计针对多个Ku波段宽带MMIC功率放大芯片进行大功率合成.对波导多路功率合成结构进行了分析,基于单个Ku波段6W功放单片,进行了16路的功率合成,研制出了工作在12～17 GHz,带宽达到6 GHz的固态功率放大器.通过测试发现该固态功率放大器的输出功率≥70 W,功率增益≥15 dB,工作电压48 V,效率≥16％...     

Ka波段100W固态功率合成器

随着科技发展,对大功率的需求越来越高,但是单个固态功率放大器输出功率有限,功率合成技术应运而生。文章介绍了一种利用波导实现Ka波段芯片级功率合成的方法。首先介绍了两路波导功率合成器的模型,分析了影响功率合成效率的因素,推导出合成效率最大化的条件。然后借助HFSS软件进行仿真优化,依托精密机加工技术制作出来的波导功率合成器可以在4GHz带宽内VSWR<1.5,LOSS<0.5dB。合成的基本单元3W模块由两个1.8W的MMIC通过Lange桥合成,在装入壳体合成之前单独调试,确保功率相等,相位一致。最后采用该合路器在35GHz~35.4GHz的工作频率内成功获得100W的合成功率,合成效率达85%以上,测试数据和模拟数据基本吻合。     

C波段GaN空间合成固态功率放大器

GaN功率器件具有高功率密度和高效率的优点,配合高合成密度和高合成效率的功率合成器,可以有效地提高功放的效率和减小功放的体积。开发了一种高密度、高效率的C波段空间功率合成技术,并且基于南京电子器件研究所自主研制的GaN功率器件进行了16路的功率合成,获得了800 W的输出功率和28%的功率附加效率,合成效率达到88%以上。     

Ka波段16W脉冲功率放大器的研制

Ka波段毫米波功率放大器的输出功率往往受限于功率合成部分的损耗,其合成器多路之间的隔离度、多级放大模块的级间匹配好坏及整体散热性能是影响整个功放可靠性的重要因素.针对上述毫米波固态功放的特点,提出了一种新颖的高效高可靠性的Ka波段宽带功率合成结构,采用低损耗的多支节波导作为功率分配/合成单元,结合以双探针波导-微带转换结构,实现了高效率的8路功率合成,各路之间隔离度大于25 dB,保证了功率合成器的高可靠性.以此为基础成功研制出一个脉冲式Ka波段固态功率放大器模块,该模块在33～37 GHz频段内,最高输出功率大于16 W,小信号增益大于55 dB,功率合成效率达到87%.     

Ku波段四路径向功率合成器的设计与实现

介绍了径向合成技术,并对径向波导的电磁场进行了分析,提出了一种新型功率合成器结构。并对基于径向合成技术的Ku波段四路功率合成器的结构进行设计,利用CST软件对该合成器的表面电流分布、能量密度、插损和驻波特性进行仿真。仿真结果表明,基于径向合成技术的Ku波段四路功率合成器的插损和驻波特性优良,完全适用于需求输出大功率的Ku波段的功放组件,突破了工程化应用的技术瓶颈。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.