中波红外连续变焦光学系统设计

针对中波红外制冷式凝视焦平面阵列探测器,探讨了红外连续变焦系统的设计方法,并在考虑红外吊舱使用要求的基础上,设计了结构紧凑、质量轻便的机械补偿5~×连续变焦光学系统.该系统工作波段3～5μm,F~#为2.0,变焦范围30～150mm,变焦轨迹短而平滑,且在全焦距范围内成像质量良好.系统由7片透镜组成,采用二次成像结构,在实现冷光阑效率100%的同时缩小了系统径向尺寸.     

小型化中波红外连续变焦光学系统设计

介绍了一种三组元联动机械补偿式小型化中波红外连续变焦光学系统。针对阵列规模640×512,像元尺寸15μm的中波制冷型红外探测器,设计了焦距20～275 mm, F数5.5的连续变焦光学系统,系统长度90.6 mm。具有变倍比大、结构紧凑、元件数量少的特点,适合应用于小型化的机载光电吊舱系统以及轻量手持红外望远系统中。     

大靶面中波红外连续变焦光学系统设计

开展了大靶面中波红外连续变焦光学系统设计研究,设计出了一种机械正组补偿式连续变焦光学系统。该系统的工作波段为3.7~4.8 m,焦距为50~580 mm,F数为4.5;靶面直径为24.6 mm,适用于目前新推出的像元间距为15 m 的1280×1024元制冷型中波红外焦平面探测器。在实现长焦距、高分辨率的同时,可保持光学系统具有大视场角,进而有效提高机载光电系统的目标搜索与识别能力。设计结果表明,本文系统的成像质量高,在30 1p／mm空间频率处的调制传递函数值接近0.2。     

高清晰大变倍比中波红外连续变焦光学系统设计

随着红外热成像系统的不断发展,对红外光学系统也提出了更高的要求。为了满足红外探测器在军事方面的广泛应用,整机系统对高性能、大变倍的红外连续变焦光学系统的需求日益增强。针对高端中波制冷型640512 凝视焦平面探测器,设计了结构紧凑、性能优良的高清晰大变倍比机械补偿连续变焦光学系统。该系统工作波段为3.7耀4.8m,F 数为4,变倍比为35:1,变焦范围为15~550mm。该系统运用平滑换根理论,实现了超大变倍比的连续变焦光学系统设计,并且采用二次成像以及45反射镜对光路进行U 型折叠,在实现了冷屏效率100%的同时有效控制了该系统的横向和径向尺寸。采用光学设计软件CODE V 进行了仿真计算和像质评价,并绘制了该系统的变焦曲线。设计结果表明,该连续变焦光学系统具有分辨率高、变倍比大、结构紧凑、在全焦距范围内成像质量优良并且变焦轨迹平滑等优点,能够与高性能中波红外探测器匹配用于高端红外热成像系统。     

大变倍比大相对孔径连续变焦红外光学系统研制

提出了一种新型连续变焦结构形式,在现有经典四组元机械补偿变焦模型的基础上,添加一个独立的变倍组,利用二个变倍组级联的方式获得超大变倍比,并推导了数学模型.在此基础上,针对制冷型中波探测器,研制了一套大变倍比大相对孔径连续变焦红外光学系统,解决了大相对孔径红外变焦系统变倍比难以提高的问题.该光学系统工作波长3. 7～4. 8μm,冷光阑效率100%,可实现从焦距6 mm至330 mm连续变焦,在F数恒定为2的同时,变倍比高达55倍.该系统仅包含八片镜片,其中三片镜片独立运动实现变焦.设计结果显示,该系统在6 mm至330 mm的焦距范围内,变焦曲线平滑、像质良好.实验室测试和外场成像结果显示,该系统在整个焦距范围内成像效果清晰,达到设计要求,验证了这种新型连续变焦数学模型的应用效果.     

全反射式红外变焦光学系统设计

针对透射式红外变焦光学系统结构复杂,无热化设计较难等问题,提出全反射式红外变焦光学系统设计。讨论了该光学系统的变焦理论,对反射变焦系统初始结构进行了高斯解分析,给出了其初始结构的计算方法。设计了一离轴三反射镜红外变焦系统,系统焦距为300～600 mm,F数为2.1,工作波段为8～12μm,采用某型非制冷长波红外探测器,截止频率为14 lp/mm,系统变焦过程近似线性连续,像面稳定,像质良好。     

轻型折衍混合中波红外变焦光学系统设计

针对640×512元制冷型中波红外焦平面探测器,采用二次成像的光学结构以及机械正组补偿变焦方式,在设计中引入了硅基衍射光学元件,从而构成折衍混合变焦光学系统。设计结果表明,光学系统使用了7片镜片,在3.7~4.8 μm波段实现了15~300 mm连续变焦,在空间频率33 lp/mm处的调制传递函数(Modulation Transfer Function, MTF)接近衍射极限。光学镜片的总重量仅有86 g,光学系统的总长度为139 mm。该系统具有变倍比大、分辨率高、重量轻、体积小等特点。     

六倍连续变焦面阵扫描红外光学系统设计

提出了一种三次成像红外连续变焦面阵扫描光学系统,在传统红外二次成像光学的基础上,增加了连续变焦的望远系统。通过正组元变焦,负组元补偿的方式,可实现连续变焦。在中间平行光路中,引入扫描振镜,可补偿由于扫描平台转动带来的曝光时间内的物面的移动,保持系统在旋转扫描时成像清晰与稳定,没有拖影。设计了60～360mm连续变焦面阵扫描中波光学系统,变焦全过程畸变小于0.5%,通过测试,光学系统各焦距的性能良好,可实用于连续变焦搜索与跟踪一体的红外系统中。     

8～12μm波段折/衍混合红外连续变焦光学系统

针对长波160×120元非制冷焦平面阵列探测器,设计了8～12 μm波段折,衍混合红外连续变焦光学系统.该系统采用机械补偿的变焦方式,变焦过程中相对孔径不变,F数为1.0,系统变焦比为4:1,在一定焦距范围内可实现连续变焦.变焦系统仅采用锗材料,通过引入衍射面和高次非球面校正系统色差和轴外像差,在空间频率14 lp/mm处,全焦距范围内MTF均在0.7以上,成像质量较好,可以连续变焦,并给出了变倍组和补偿组的变焦运动曲线.     

长波红外两档5倍变焦光学系统设计

与连续变焦光学系统相比,两档变焦光学系统具有结构简单、装调容易、透射比高等优点.针对320×240非制冷焦平面阵列探测器,设计了一个长波红外两档变焦光学系统,系统采用切入式变焦方式,在短焦时切入两片透镜实现宽视场,宽视场时全视场角为31.4°,可用于跟踪和搜索目标;窄视场时全视场角为6.44°,可用于捕获和观察目标.通过引入二元面和非球面,大大提高了成像质量,在空间频率111p/mm处,宽视场和窄视场都具有较好的成像质量.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its