一种用于干涉型光纤传感器动态相移测量的J0-J1法

提出了一种用于干涉型光纤传感器动态相移测量的J0-J1法,实现了无源零差检测,而且信号解调算法简单,检测频带宽。详细介绍了该方法的基本检测原理,并对解调误差进行了理论分析与仿真,得出了系统能够检测的最大动态相移幅度与干涉仪的工作点允许变化的范围相互制约的结论。编写了实时的信号采集、处理程序,对某一干涉型光纤水听器探头的声压灵敏度进行了测量。在频带20~1300Hz上,平均声压灵敏度为-162dB(0dB=1rad/μPa),波动<±1.0dB,单频点500Hz的灵敏度变化<±0.5dB,与采用相位载波(PGC)调制解调法测量的结果基本一致,验证了J0-J1法的可行性。     

干涉型光纤传感器相位漂移的无源解决方法

相位漂移是干涉型光纤传感器实际应用中遇到的关键问题之一。提出了一种基于线性控制原理的无源解决方法,利用干涉仪的输出信号得到一个误差信号对光源波长进行调节,在非平衡干涉仪中产生一个补偿相位,对各种噪声引起的相位漂移进行补偿,从而使干涉仪一直工作在最灵敏的地方,实现了无源线性检测。搭建实验系统,利用该方法对某一干涉型光纤水听器进行了测试,结果表明该光纤水听器被很好地控制在正交工作状态,获得了稳定的输出信号。在20~2500 Hz频率范围内,该光纤水听器的声压灵敏度为-156.5 dB(0 dB=1 rad/μPa),频响波动<±1.2 dB,与采用相位载波(PGC)调制解调方法测得的结果一致,从而验证了该方法的可行性。     

基于LabVIEW的光纤水听器闭环工作点控制系统

介绍了一种基于LabVIEW的干涉型光纤水听器闭环工作点控制系统.该系统通过调节光源频率,利用非平衡干涉仪两臂的光程差产生补偿相位,实现了工作点的控制,从而避免了在干涉仪中引入压电陶瓷(PZT),提高了系统的稳定性与可靠性.同时,对传统的信号解调算法进行了改进,提高了解调精度和动态范围.利用该系统对某一干涉型光纤水听器的声压相位灵敏度进行了测量.在频带102～2×103 Hz上,平均灵敏度为-162 dB,频响波动＜±1.0 dB,与采用相位载波(PGC)调制解调方法测量的结果基本一致,验证了该系统的可行性.     

基于相位载波调制解调技术的全保偏光纤水听器

报道了基于相位载波调制解调技术的全保偏光纤水听器研究结果.采用全保偏光纤干涉仪结构消除了偏振不稳定性,运用相位载波调制解调信号处理技术消除相位随机漂移引起的干涉信号衰落的影响,实现了对声信号的稳定检测和光纤水听器探头的全光纤化.实验测得在20～1 600 Hz频段,光纤水听器的相位灵敏度约为-162.5 dB,灵敏度的起伏为±0.7 dB,500 Hz单频点的灵敏度变化小于0.1 dB.     

金属环封装低频光纤布拉格光栅振动传感系统研制

研制了一种金属环封装的单柱体芯轴式光纤布拉格光栅(FBG)振动传感器,搭建了基于非平衡迈克耳逊干涉仪相位载波调制(PGC)解调技术的FBG振动传感器解调系统,实现了低频振动信号的高精度实时解调,并分析了各参数对传感器谐振频率和灵敏度等特性的影响。实验结果表明,研制的FBG振动传感器谐振频率为388Hz,在10～200Hz频率范围内,传感器的加速度灵敏度约为81pm/g,且加速度响应平坦,起伏小于1dB,与理论分析结果基本一致。研制的振动传感器可实现200Hz以下低频振动信号的实时检测,解调系统的波长检测精度为1.07×10-3 pm,最小可检测加速度为1.3×10-5 g。     

干涉型保偏光纤微振动矢量传感器研究

报道了干涉型保偏光纤微振动矢量传感器的理论与实验结果。传感器采用全保偏光纤结构 ,消除了偏振不稳定性 ,系统采用光频调制相位载波 (PGC)解调信号处理技术 ,消除了干涉仪初始相差的影响 ,从而实现了对传感信号的稳定检测。对三轴正交芯轴式干涉型全保偏推挽结构的光纤微振动矢量传感器进行了理论和实验研究。由理论得到了简化公式 ,并通过公式分析了各种参数对传感器谐振频率与灵敏度等特性的影响。由实验得到系统谐振频率约为 370Hz,与 375Hz的理论结果基本一致。在 5～ 2 0 0Hz频段系统灵敏度响应平坦 ,约为 340rad/g ,略低于 35 6rad/g的理论值。该传感器具有良好的矢量性 ,在 4 5°方向的灵敏度约为轴向灵敏度的 0 7倍 ,与理论结果一致 ,正交方向串扰小于 - 2 6dB。系统最小可测相位为 10 -5rad ,最小可测加速度为 3× 10 -8g。     

基于铒镱共掺分布布拉格反射式光纤激光器的有源光纤水听器声压灵敏度

对基于铒镱共掺分布布拉格反射式光纤激光器(DBR-FL)的有源光纤水听器进行了研究.制作了腔长为8 cm的铒镱共掺DBR-FL,在抽运功率为50 mW时,激光器的输出功率达到0.263 mW;采用带法拉第旋镜的迈克尔逊干涉仪和相佗载波(PGC)解调方案,解调出施加在铒镱共掺DBR-FL有源光纤水听器的声信号,并通过与标准压电水听器对比得到声压灵敏度;对单频信号进行多次测量,声压灵敏度的波动小于±0.6 dB;测量了80 Hz到2.5 kHz频率范围的响应曲线,除125 Hz,200 Hz和250 Hz三个频点外,声压灵敏度已达到或超过部分文献报道中干涉型光纤水听器的灵敏度;与基于DFB-FL的有源光纤水听器做了对比测试,结果表明频率响应不平坦是未对水听器进行封装和测试系统引起的.     

用于周界安防的光纤光栅振动传感系统研究

基于光纤光栅传感理论设计了一种应用于周界安防的低频振动传感器.采用商用解调仪OPD4000对传感器的灵敏度进行了测试,在10～100 Hz频率范围内,传感器灵敏度高于1 000 pm/g.基于非平衡迈克尔逊干涉仪相位载波调制(PGC)解调技术搭建了一套光栅传感器解调系统,实现对传感器低频振动信号的高精度实时解调,使得该系统可广泛应用于机场、监狱、油库、核场所等重要区域的周界安防中.     

基于激光干涉法的谐振式高加速度振动传感器校准技术研究

校准是保证振动传感器测量结果准确和可靠的重要手段。针对传统中频校准装置无法提供高加速度振动激励以及高加速度振动量值无法溯源的问题,开展基于激光干涉法的谐振式高加速度振动传感器校准技术研究。基于谐振原理建立谐振式高加速度振动发生装置,实现高加速度振动发生;建立外差激光干涉法绝对振动校准系统,通过对外差激光干涉信号的直接采集和解调,实现了高加速度振动测量和校准。实验结果表明,该系统能够在140-2929 Hz频率范围、100-10000 m/s²加速度范围内实现振动传感器的灵敏度幅值与相位的有效校准。     

利用正交偏振切换抗偏振衰落和抑制偏振噪声

干涉型光纤传感器是一种高灵敏度的传感器,在许多领域都具有重要应用价值,而偏振衰落是这种传感器中需要解决的一个重要问题。提出采用脉冲正交偏振切换及基于相位生成载波(PGC)的信号合成算法来实现抗偏振衰落。阐述了正交偏振切换方法的基本理论,分析了以PGC解调为基础的正交偏振切换合成算法的原理,搭建了实验系统进行实验研究。结果表明,当光纤中偏振态受到扰动时,通过正交偏振切换及合成算法,合成的结果等效干涉度可以稳定在0.93~0.94之间;解调结果的噪声可以达到四路偏振通道噪声的最低水平。该方法可以消除传输光纤中偏振扰动所造成的低频相位漂移,使解调结果不受传输光纤中偏振态扰动的影响。长时间的噪声监测结果表明,PGC调制频率为8kHz时,系统噪声达到了-96dB/槡Hz(1kHz),与同一系统中采用法拉第旋镜作为反射镜测得的本底噪声相当。该方法为解决干涉型光纤传感器时分复用阵列,特别是基于光纤光栅的干涉型准分布式光纤传感器和分布式传感系统中的偏振衰落问题提供了一种可行的途径。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.