角状螺旋固体激光器偏振特性的理论分析

利用琼斯矢量和琼斯矩阵的形式对ＥＳ激光器的偏振特性作了分析，得到光线在激光腔内往返一周的琼斯变换矩阵．证明了ＥＳ激光器具有偏振态自再现性质，同时研究了偏振损耗的变化规律．给出了计算结果。     

图像奇异值特征矢量缩放不变性分析及应用

图像奇异值特征矢量以其稳定性和它在转置、平移、旋转和镜像变换下具有的不变性,被认为是一种图像的代数特征,广泛应用于图像匹配和图像识别。通过矩阵运算,证明了奇异值特征矢量在图像做缩放变换时具有不变性,并将这种性质运用于图像匹配。实验结果表明这种不变性与奇异值特征矢量在图像做转置、平移、旋转和镜像变换时所具有的不变性一样,是奇异值特征矢量能够作为图像代数特征的一个重要依据。     

用分离变量法求解长旋转椭球坐标下的Maxwell方程

过去许多作者曾指出,在一般情形下,长旋转椭球坐标下的Maxwell方程不能用分离变量法求解。然而,本文证明,即使激励场不是轴对称时(即一般情形),引入适当的变换后,长旋转椭球坐标下的Maxwell方程仍然可以用分离变量法求解。从而提供了一种求解长金属旋转椭球体强迫振荡问题的方法。     

基于IWT和FCM的曲线矢量数据压缩方法

矢量数据压缩对于GIS数据的存储、网络传输以及在移动设备中的使用都具有重要意义。在此通过对曲线矢量数据特点的分析,提出基于整数小波变换的矢量数据压缩方法。压缩方案包括3个主要流程：矢量数据整型化。曲线矢量数据具有相邻坐标点间坐标值大小差别不大的特点,将坐标点间的差值转换为整型的偏移量,用偏移量表示矢量数据的坐标点,利用整数小波变换处理偏移量序列。实验表明,偏移量序列经过整数小波变换得到的小波系数序列在空间分布上更加集中,适合使用高效的编码压缩方法;对变换后的小波系数进行编码压缩。在此使用模糊C均值聚类字典法编码实现了曲线矢量数据的有损编码。通过实验和其他压缩算法结果的对比,该方法具有压缩比较高,失真小的特点。     

对琼斯矩阵法测量PMD的改进

为了精确确定输出光的偏振态,对JME测量结构进行了改进,加入了1／4波片．引入正弦值,计算确定了输出光的琼斯矢量、光纤的琼斯矢量和光纤的琼斯矩阵,使测量误差减小到6％。     

光致各向异性记录介质偏振全息图的透射矩阵

在给定参，物光波的偏振态和位相差的关系以后，用光致各向异性介质记录的偏振全息图的光学常数分布便被确定。这样，可以把偏振全息图看作是一种复杂的偏振元件，按照偏振元件的矩阵理论，可以求出偏振全息图的透射短阵，透射矩阵与照明光的琼斯矢量相乘，使可以求出再现光波的琼斯矢量。     

光隔离器原理的数学描述

利用琼斯矢量及琼斯矩阵、描述了光隔离器的原理，并分析了法拉第旋光器旋光角的精度以及两只偏光镜相对方位角的精度对光隔离器插入损耗的隔离度的影响。     

复合1／4波片工作特性分析

基于偏振光矢量的琼斯矩阵理论,本文分析了复合波片的工作特性,结果表明：复合1／4波片系统并不存在所谓的等效快轴,但对偏振态的变换作用可等效于旋光器和单1／4波片的组合。     

旋转和尺寸变化的图象的相关识别

利用光栅矢量法设计旋转和尺寸不变图象识别所需的位相片，进一步阐述了这种方法的一些特点，并用基尔霍夫衍射积分验证了位相片的变换效果的确是理想的。     

电梯专用矢量控制变频调速器设计

简要介绍了一种电梯专用的、矢量控制变频调速器的原理和技术方案。该变频调速器采用转差频率型矢量控制，在电动机转子磁通的旋转坐标上，对电动机进行运算控制，使交流异步电动机具有直流电机的调速性能，即使在零速时，也能输出额定转距，此外，由于功率因素始终接近于１，比普通调压调速方式节能３０％以上。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its