选择外延MOVPE的表面迁移

研究了采用选择外延MOVPE生长InGaAsP的组分随掩模宽度的变化规律,以及InGaAsP表面边缘尖角随Ⅴ/Ⅲ比的变化.结果表明,随着掩模宽度的增大,In组分增大,Ga 组分减少;随着Ⅴ/Ⅲ比的增大,InGaAsP 材料表面趋向平坦.对材料边缘尖角的变化规律作出了合理解释,研制出表面平坦的外延材料,为器件研制提供了有效的方法.     

InGaAsP材料的厚度增强因子随选择外延MOVPE生长条件的变化

利用扫描电子显微镜(SEM)研究了在选择外延MOVPE生长InGaAsP材料中,厚度增强因子随SiO2掩模宽度的变化,生长条件(如生长压力、Ⅲ族源流量等)对厚度增强因子的影响.随着生长压力的增加,生长速率下降,选择性增强;随着In源流量的增加,生长速率上升,选择性下降.制备了最大厚度增强因子达3.4的InGaAsP体材料.通过扫描电镜观察,得到了较平坦的生长界面和表面形貌.为用选择生长法制备DFB激光器与模斑转换器集成器件提供有效的方法.(OH12)     

全固源分子束外延生长InP和InGaAsP

在国产分子束外延设备的基础上,利用新型三温区阀控裂解源炉,对InP及InGaAsP材料的全固源分子束外延(SSMBE)生长进行了研究.生长了高质量的InP外延层,表面缺陷密度为65cm-2,非故意掺杂电子浓度约为1×1016cm-3.InP外延层的表面形貌、生长速率及p型掺杂特性与生长温度密切相关.研究了InGaAsP外延材料的组分特性,发现在一定温度范围内生长温度对Ⅲ族原子的吸附系数有较大影响.最后得到了晶格匹配的In0.56Ga0.4As0.04P06材料,低温光致发光谱峰位于1507 nm,FWHM为9.8 meV.     

利用MOVPE选区外延生长InGaAsP

研究了利用低压 MOVPE宽条 (15μm )选区外延生长 In Ga As P的性质 .研究了生长速率、厚度增强因子、带隙调制、组分调制随着生长条件如掩模宽度、生长压力、 族源流量的变化规律 ,给出了合理的解释 .同时研究了不同 / 比下选择性生长 In Ga As P表面尖角的性质.     

应用SEM和V-I特性研究1.3μmInGaAsP/InP DH激光器中掺杂的影响

本文说明用 SEM和V-I特性法研究 1.3μm InGaAsP/InP DH激光器中掺杂对 PN结位置及 PN结性质的影响.认为用 Zn作P型掺杂剂的 InGaAsP/InP DH 激光器中,由于Zn在InGaAsP和InP晶体中的快扩散及外延生长期间Zn蒸气沾污是PN结偏位的主要原因.施主和受主掺杂的高浓度会产生隧道型 PN 结. 因此在研制激光器的工艺中,控制Zn的沾污及掺杂剂的浓度是非常重要的.     

选择区域生长高质量InGaAsP多量子阱材料

采用LP-MOVPE在SiO2掩膜的InP衬底上实现了高质量的InGaAsP多量子阱(MQW)的选择区域生长(SAG).通过改变生长温度和生长压力,MQW的适用范围由C波段扩展至L波段,即MQW的光致发光波长从1546nm延展至1621nm.光致发光（PL）测试表明：在宽达75nm的波长范围内,MQW的质量与非选择生长的MQW质量相当,并成功制作出电吸收调制DFB激光器（EML）.     

InAsP/InGaAsP/InP应变材料的二维倒空间衍射研究

采用X射线衍射三轴二维倒空间衍射图研究了InP(100)衬底上分子束外延生长的压应变InAsP材料和张应变InGaAsP材料.实验测定了两种材料的(004)面、(224)面的倒空间衍射图,得到了处于部分弛豫状态的InGaAsP在不同方向呈现不同的应变状态.排除了外延层倾斜及应变对确定失配度的影响,准确计算得到InAsP外延层体失配度为1.446%,InGaAsP外延层体失配度为-0.5849%,并且生长了高质量的应变补偿8阱多量子阱.     

InAsP/InGaAsP/InP应变材料的二维倒空间衍射研究

采用X射线衍射三轴二维倒空间衍射图研究了InP(100)衬底上分子束外延生长的压应变InAsP材料和张应变InGaAsP材料. 实验测定了两种材料的（004）面、(224）面的倒空间衍射图，得到了处于部分弛豫状态的InGaAsP在不同方向呈现不同的应变状态. 排除了外延层倾斜及应变对确定失配度的影响，准确计算得到InAsP外延层体失配度为1.446%, InGaAsP外延层体失配度为-0.5849%，并且生长了高质量的应变补偿8阱多量子阱.     

InAsP/InGaAsP/InP应变材料的二维倒空间衍射研究

采用X射线衍射三轴二维倒空间衍射图研究了InP(100)衬底上分子束外延生长的压应变InAsP材料和张应变InGaAsP材料.实验测定了两种材料的(004)面、(224)面的倒空间衍射图,得到了处于部分弛豫状态的InGaAsP在不同方向呈现不同的应变状态.排除了外延层倾斜及应变对确定失配度的影响,准确计算得到InAsP外延层体失配度为1.446%,InGaAsP外延层体失配度为-0.5849%,并且生长了高质量的应变补偿8阱多量子阱.     

用1.3μm半导体激光器直接调制产生2.1GHz超短光脉冲

报道了直接调制InGaAsP半导体激光器获得重复率为2.1GHz、脉宽为25～60ps的超短光脉冲。     

Monolithically integrated multi-wavelength laser by selective areagrowth with metal organic vapour phase epitaxy

A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author' knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE     

MOVPE-grown 1.5 µm distributed feedback lasers on corrugated InP substrates

A single-step low-pressure metalorganic vapor phase epitaxy (MOVPE) was applied to the fabrication of 1.5 μm InGaAsP/InP distributed feedback laser diodes on corrugated InP substrates, accompanied by LPE for buried heterostructure formation. High probability of single longitudinal mode operation was obtained due to the uniformity of the active layer thickness. A typical threshold current was 35 mA with both facets cleaved. A maximum output power of up to 27 mW was also obtained under single longitudinal mode operation with anti-reflective/cleaved facet configuration. The laser diode had high spectral stability under high-frequency direct modulation of 1.4 GHz. Results of initial aging tests (APC of 5 mW at 25°C for longer than 3800 h) have shown no degradation in driving currents. It is found that low-pressure MOVPE is favorable for epitaxial growth on corrugated substrates.     

Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology

Electroabsorption modulators with polarization-independence of transmission (TE/TM sensitivity <0.4 dB at 1550 nm) over a wide wavelength range from 1540-1560 nm have been realized using tensile-strained InGaAs and InGaAsP quantum wells. Both designs show 42-GHz modulation bandwidth with a high bandwidth-to-drive-voltage ratio of >23 GHz/V. Polarization insensitivity of modulator transmission and chirp is demonstrated. Technical realization has been done in ridge waveguide technology with low-pressure MOVPE, reactive ion etching (RIE) for semiconductor etching and polyimide for planarization.     

Optoelectronic integrated circuit (OEIC) waveguide coupler for spotsize expansion and improved fibre coupling efficiency

An MOVPE vertical coupler structure is used to provide efficient coupling between InP/InGaAsP optoelectronic integrated circuit (OEIC) waveguides and cleaved monomode fibres. A 2 dB improvement in the coupling efficiency of TE polarised light of wavelength 1.55 μm is demonstrated. The structure does not require any additional growth steps, and is compatable with vertically integrated detector structures     

Tapered thickness MQW waveguide BH MQW lasers

We propose and demonstrate a novel 1.3 μm InGaAsP/InGaAsP multiple-quantum-well (MQW) BH Fabry-Perot laser diode monolithically integrated with a MQW tapered thickness waveguide. A selective area growth (SAG) technique is used to fabricate the tapered thickness waveguide with low absorption loss and to integrate it with the MQW gain region with a high coupling efficiency. We achieve very narrow vertical and lateral far-field FWHM of 11.8° and 8.0°, with low threshold current of 19 mA and high slope efficiency of 0.25 mW/mA     

Metalorganic InP and Inx Ga1-x,Asy P1-y,on InP epitaxy at atmospheric pressure

We present a procedure for the MOVPE of InP as simple as the one currently used for GaAs. InP and InGaAsP alloys are grown on InP substrates using trimethy1indium (TMI), phosphine, trimethylgallium (TMG) and arsine. The choice of carrier gas is important ; a mixture of hydrogen and nitrogen allowed us to grow uniform layers over large areas at atmospheric pressure, without pyrolizing the phosphine or separating the input reactants. Preliminary characterization results are presented. Most information contained in this paper was presented at the 1983 Electron Materials Conference as paper Cl.     

Extremely large band gap shifts for MQW structures by selectiveepitaxy on SiO2 masked substrates

The authors investigate selective epitaxy through SiO₂ masks of varied geometry with the goal of making planar photonic integrated circuits. The InGaAs/InP, InGaAsP/InP, and InGaAs/InGaAsP MQW material systems are studied with atmospheric and 100-torr MOVPE. Extremely large bandgap shifts (136 meV) can be achieved, more than enough to allow construction of lasers, modulators, and low-loss waveguides in a single plane     

Enhanced exciton absorption in quantum-confined Stark effect of [110]-oriented InGaAsP quantum wells

A new phenomenon of the quantum-confined Stark effect has been found in InGaAsP quantum wells grown on [110]InP substrates by MOVPE. Enhanced exciton absorption concurrent with the applied voltage is observed for the first time.<>     

1.7–1.8 µm Diode lasers based on quantum-well InGaAsP/InP heterostructures

Separate-confinement InGaAsP/InP heterostructures with highly strained quantum wells are grown by metal-organic vapor-phase epitaxy (MOVPE). The properties of InGaAsP and InGaAs quantum wells are studied, and the influence of the heterostructure parameters on the lasing wavelength is analyzed. The grown structures are used for designing high-intensity multimode and single-mode mesa-stripe laser diodes operating in the range λ=1.7–1.8 µm. The maximum continuous-wave lasing power achieved at room temperature is 1.6 W and 150 mW for multimode and single-mode laser diodes, respectively. Single-mode lasing is retained up to 100 mW.     

Effect of temperature on InGaAsP alloy composition

The influence of growth temperature on the composition of InGaAsP films grown by low pressure metalorganic vapor phase epitaxy (MOVPE) is reported for quaternary (Q) alloys having bandgap wavelengths of λ_g = 1.1, 1.3, and 1.5 μn. Films with these different Q-compositions were deposited lattice matched to InP at a growth temperature of 675°C. Subsequent growth experiments were then performed for each Q-composition in which the input gas flow rates were kept the same and only the temperature changed in 25°C decrements down to 600°C. Photoluminescence (PL) and lattice mismatch (LMM) measurements of the resulting films were used to determine the effect of growth temperature on film composition. The PL data indicate a temperature shift in the PL wavelength of −1.8 nm/ °C for the 1.5Q composition, −2.9 nm/°C for 1.3Q, and −4.3 nm/°C for 1.1Q. Negative shifts were also observed in LMM of −80 ppm/°C for 1.5Q, −150 ppm/°C for 1.3Q, and −250 ppm/°C for 1.1Q. The Ga/In and P/As ratios of the Q-filmswere measured by secondary ion mass spectroscopy and correlated with full-wafer maps of the PL wavelength and lattice mismatch to gain insight into the processes responsible for wafer nonuniformity in MOVPE.