InP材料体系RTD的研制

报道了InP衬底AlAs /In0.53Ga0.47As/AlAs结构共振隧穿二极管(RTD)的研制过程.衬底片选用(001)半绝缘InP单晶片,结构材料使用分子束外延(MBE)技术制备,并用PL谱对外延片进行测试,器件采用台面结构.测得RTD器件室温下的峰谷电流比(PVCR)为7.4,峰值电流密度(Jp)为1.06×105A/cm-2,是国内首例成功的InP材料体系RTD.     

共振隧穿二极管THz辐射源研究进展

太赫兹技术被称为“改变未来世界十大技术之一”,对基础科学研究、国民经济发展和国防建设具有重要意义,尤其在未来6G通信方面举足轻重。太赫兹波源是整个太赫兹技术研究的基础,也是太赫兹应用系统的核心部件。近年来,共振隧穿二极管(RTD)型太赫兹波源因体积小,质量轻,易于集成,室温工作,功耗低等特点受到广泛关注,为太赫兹波推广应用开辟了新的途径。通过文献分析,本文从器件材料技术、主要工艺及器件性能等方面对InP基与GaN基RTD太赫兹振荡器的发展进行评述,并探讨了InP基与GaN基RTD太赫兹振荡器件的研究方向。     

InP衬底AlAs/In0.53Ga0.47As RTD的研制

报道了InP衬底AlAs/In0.53Ga0.47As/AlAs两垒一阱结构共振隧穿二极管(RTD)器件的研制.结构材料由分子束外延制备,衬底片为(001)半绝缘InP单晶片,器件制作选用台面结构.测得室温下的峰值电流密度为1.06×105 A/cm2,峰-谷电流比为7.4,是国内报道的首例InP材料体系RTD器件.     

InP衬底AlAs/In0.53Ga0.47As RTD的研制

报道了InP衬底AlAs/In0.53Ga0.47As/AlAs两垒一阱结构共振隧穿二极管(RTD)器件的研制.结构材料由分子束外延制备,衬底片为(001)半绝缘InP单晶片,器件制作选用台面结构.测得室温下的峰值电流密度为1.06×105 A/cm2,峰-谷电流比为7.4,是国内报道的首例InP材料体系RTD器件.     

InP基RTD特性的数值模拟研究

采用基于非平衡格林函数法(Non-equilibrium Green’s function,NEGF)量子输运模拟器WinGreen对InP基共振隧穿二极管(RTD)的输运特性进行了计算模拟,分析了Ga0.47In0.53As/AlAs以及富In组份势阱双势垒结构几何参数、散射参数、发射区和集电区掺杂浓度以及隔离层厚度对InP基RTD器件I-V特性的影响。模拟结果表明,采用富In组份的势阱有利于降低峰值电压,提高发射区掺杂浓度有利于增大峰值电流密度,而散射则会导致谷值电流增大,影响其负阻特性。     

InP基RTD太赫兹振荡源及其应用研究进展

紧凑和相干的太赫兹源是太赫兹应用的关键组成,共振隧穿二极管(RTD)是目前振荡频率最高的电子学器件,RTD太赫兹振荡源具有结构紧凑、功耗低、室温工作、有一定输出功率、易集成、覆盖频率较宽等优点。InP基RTD太赫兹振荡源在600 GHz左右的频段内输出功率可达百微瓦量级,可见报道的最高振荡频率为1.92 THz,输出功率0.4 μW。RTD振荡源的输出功率可以通过偏置电压进行直接调制,使得其在高容量短距离的太赫兹通信系统中具有很大的优势。目前,InP基RTD太赫兹振荡源成为太赫兹源领域的研究热点。     

InP基共振遂穿二极管器件（RTD）研究

我们在实验中对InGaAs/AlAs/InP共振遂穿二极管（RTD）材料结构进行了优化设计,并用MBE设备在(100)半绝缘InP单晶片上生长了RTD外延材料。我们采用电子束光刻工艺和空气桥互连技术,制作了InP基RTD器件。并在室温下测试了器件的电学特性：峰值电流密度24.6kA/cm2,峰谷电流比(PVCR)为8.6。     

MSM-PD与RTD光电集成的模拟

设计了由谐振隧穿二极管(RTD)为驱动器件,以金属-半导体-金属光探测器(MSM-PD)为光敏元件的光电集成电路单元,利用通用电路模拟软件PSPICE基于其物理意义的电流-电压方程建立直流电路模型,模拟其暂态特性,结果表明器件具有反相输出功能和双稳态特性.     

利用空气桥技术实现InP基共振遂穿二极管器件

优化设计了InGaAs/AlAs/InP共振遂穿二极管（RTD）材料结构,并用MBE设备在（100）半绝缘InP单晶片上生长了RTD外延材料。利用电子束光刻工艺和空气桥互连技术,制作了InP基RTD器件。并在室温下测试了器件的电学特性：峰值电流密度78kA/cm2,峰谷电流比（PVCR）为7.8。利用空气桥互连技术实现该类器件,在国内尚属首次。     

谐振隧穿二极管的直流模型及其双稳态特性

研制成的在常温下工作的谐振隧穿二极管 (RTD) ,峰谷比达到了 5∶ 1,最高振荡频率为 2 6 .3GHz.采用基于物理意义的电流 -电压方程 ,利用通用电路模拟软件 PSPICE,建立了其直流电路模型 ,模拟结果和实验数据吻合得很好 ;并以此为基础模拟出了以 RTD为驱动器 ,以电阻或 RTD本身为负载的电路双稳态特性 ,同时分析了 RTD器件双稳态特性 .     

Low DC-power ku-band differential VCO based on an RTD/HBT MMIC technology

This letter presents the design and fabrication of a Ku-band differential-mode voltage-controlled oscillator (VCO) with extremely low power consumption and good phase noise characteristics based on a monolithic InP-based resonant tunneling diode/heterojunction bipolar transistor (RTD)/(HBT) technology. In order to reduce the power consumption, an InP-based RTD is used for microwave power generation, which shows the negative resistance characteristics at a low voltage. The fabricated VCO shows an extremely low dc power consumption of 1.42mW and fairly good phase noise performance of -112 dBc/Hz at 1-MHz frequency offset. The figure-of-merit (FOM), which is used for comparing the performance of the fabricated oscillator with the previously reported results, was obtained to be -195 dBc/Hz. The obtained FOM is one of the best values among Ku-band differential VCOs reported so far.     

共振隧穿二极管型光探测器和光调制器

将共振隧穿二极管(RTD)的核心结构——双势垒系统与光探测器和调制器的原理相结合可构成共振隧穿光探测器和共振隧穿光调制器。这些器件既保持了RTD高频、高速的特点,同时又具备了光探测器和光调制器原有的功能,可用于光电集成电路。介绍了这种具有代表性的RTD型光电器件的工作原理、器件结构、制造工艺、器件参数测试等,为此类器件在国内的设计和研制奠定基础。     

Static frequency divider featuring reduced circuit complexity byutilizing resonant tunneling diodes in combination with HEMTs

A static frequency divider constructed with resonant tunneling diodes (RTDs) in combination with HEMTs is proposed and demonstrated. The circuit complexity is reduced drastically. The proposed circuit is fabricated using InP-based RTD/HEMT monolithic integration technology. Proper operation is demonstrated at room temperature by a quasi-static test pattern. The circuit includes two sub-circuits which behave like D-latches. Each sub-circuit consists of only three components. This number of components is one fifth of that required to construct a D-latch using conventional SCFL technology. The strong nonlinear I-V characteristics of RTD's are fully utilized for this reduction     

共振隧穿器件及其集成技术发展趋势和研究热点

在概括了共振隧穿器件及其集成技术的特点和分析了其发展趋势的基础上,给出了该领域当前的研究热点。     

Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current-voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure.     

RTD 高频等效电路的① 研究及应用现状

详述了RTD器件各高频等效电路模型及其各模型的应用与适用条件。并在40GHz以下的频率范围内，用CECM描述RTD器件的高频特性也较成功。     

A Sub-100 $mu{rm W}$ Ku-Band RTD VCO for Extremely Low Power Applications

This letter presents the microwave performance of a sub-100 $mu{rm W}$ Ku-band differential-mode resonant tunneling diode (RTD)-based voltage controlled oscillator (VCO) with an extremely low power consumption of 87 $mu{rm W}$ using an InP-based RTD/HBT MMIC technology. In order to achieve the extremely low-power Ku-band RTD VCO, the device size of RTD is scaled down to $0.6times 0.6 mu{rm m}^{2}$. The obtained dc power consumption of 87 $mu{rm W}$ is found to be only 1/18 of the conventional-type MMIC VCOs reported in the Ku-band. The fabricated RTD VCO has a phase noise of $-$100.3 dBc/Hz at 1 MHz offset frequency and a tuning range of 140 MHz with the figure-of-merit (FOM) of $-$194.3 dBc/Hz.      

GeSi/Si共振隧穿二极管

GeSi/Si共振隧穿二极管主要包括空穴型GeSi/SiRTD、应力型GeSi/SiRTD和GeSi/Si带间共振隧穿二极管三种结构。着重讨论了后两种GeSi/Si基RTD结构;指出GeSi/Si异质结的能带偏差主要发生在二者价带之间(即ΔEv>ΔEc),形成的电子势阱很浅,因此适用于空穴型RTD的研制;n型带内RTD只有通过应力Si或应力GeSi来实现,这种应力型RTD为带内RTD的主要结构;而带间GeSi/SiRITD则将成为更有应用前景的、性能较好的GeSi/SiRTD器件结构。     

RTD多值逻辑电路原理与电路模拟

由共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)构成的多值逻辑(MVL)电路可以用最少的器件来完成一定的逻辑功能,达到大大简化电路的目的。共振隧穿二极管和高电子迁移率晶体管属于量子器件,具有高频高速的特点,所以这一逻辑电路有很好的应用前景。本文就多值逻辑电路中的几个典型电路用Pspice软件进行电路模拟,得到了与理论分析一致的模拟结果。