扫描近场光学显微镜测量量子点团簇超辐射

用扫描近场光学显微镜的针尖照明模式对ZnSe量子点团簇进行精确定位测量,研究了量子点团簇的超辐射效应。在理论上根据Wannier激子超辐射模型阐述了量子点系统的超辐射发光机制;实验上用荧光光谱表征ZnSe量子点溶液的荧光性质,用扫描近场光学显微镜(SNOM)表征单个量子点团簇的超辐射光谱。结果表明,在Wannier激子超辐射模型中,量子点团簇辐射衰变率受到量子点团簇的大小和辐射光谱的共同影响,在实验上得出团簇的辐射衰变率随团簇尺寸的增加而增大,同时,不同尺寸的量子点团簇产生的辐射光谱也会对其产生影响,理论和实验的结合验证了激子超辐射的适用性。此研究结果可广泛用于生物传感器和光子器件等领域。     

荧光金纳米团簇探针的生物成像应用进展（特邀）

金纳米团簇（AuNCs）因兼具优异荧光特性、超小尺寸、精确化学组成及良好生物相容性等优势，使其成为近些年备受关注的新型荧光探针。为了推动荧光AuNCs在成像领域的应用，研究者们一直致力于发展高性能荧光AuNCs的设计与制备策略。基于对AuNCs结构与发光机制的理解，诸如提高荧光量子产率和细胞摄取率等策略陆续被提出以增强AuNCs的细胞成像效果，极大提升了其作为荧光成像探针的潜力，并将AuNCs的应用推广至荧光寿命成像、多光子成像等新兴荧光成像技术。近些年发展的具有近红外二区荧光的AuNCs进一步推动了其在活体成像的应用。文中概述了AuNCs的制备方法、提高AuNCs细胞荧光成像效果的各种策略，以及AuNCs荧光成像应用的最新进展，并对该领域的挑战和未来发展进行了展望。     

生长温度对类金刚石膜结构和发光性质的影响

使用脉冲激光沉积技术制备了系列无氢类金刚石薄膜,测量了样品的Raman光谱、光吸收光谱和光致发光光谱,研究了薄膜结构和光致发光性质与制备条件的依赖关系。结果表明,这种薄膜是由少量sp2键和大量sp3键组成的非晶碳膜。薄膜的光学带隙在1.68~2.46eV,发光在可见光区呈宽带结构。生长温度能够对类金刚石薄膜的结构和发光性质产生较大影响。当生长温度从室温升高至400℃时,sp2团簇的变大使C原子的有序度增强,从而导致薄膜的光学带隙变窄,发光峰红移且半高宽变小。     

超宽带光纤放大器用的新型掺铋发光材料

最近,一种新型的掺铋发光材料引起了人们的关注。这种发光材料有长的荧光寿命(τ>200μs),在800nm激光激 发下发射波长在1200-1600nm区间的超宽带荧光(荧光半高宽FWHM>200nm),其发光性质与以往文献中报道的Bi3+或 Bi2+掺杂的发光材料的性质截然不同;光发射截面(σem)是光掺铒光纤放大器玻璃(EDFAG)的2-3倍,其σem×FWHM值是 EDFAG的10倍左右,σem×τ值是掺Ti3+蓝宝石的3倍左右。     

碱性体系下水热合成ZnS∶Sm微球及其发光特性

以硝酸锌和硫粉分别为锌源和硫源,利用水热法在碱性体系下合成了具有光谱下转换功能的Zn S∶Sm微球。探讨了Sm3+掺杂浓度、反应温度对Zn S∶Sm微球的晶相结构和发光性质的影响。采用SEM、XRD、PL和PLE等对微球的晶体形貌、物相结构和荧光性能进行表征。结果表明,Sm3+掺杂浓度越高,晶体中发光中心越多、发光越强,但Sm3+掺杂浓度达到摩尔分数5%时,在浓度淬灭和Zn S晶格畸变的双重作用下,导致发光减弱。反应温度越高,晶体生长越完整,晶体的发光越强。     

Au掺杂HgCdTe材料的光电特性

Au掺杂是改善光伏型HgCdTe红外探测器性能的一种技术途径,通过Au掺杂来取代HgCdTe材料中的本征的Hg空位,可以提高材料的少子寿命和少子扩散长度。采用液相外延技术生长了Au掺杂的HgCdTe外延材料,Au的掺杂浓度为~8×1015/cm3,通过富Hg退火技术来抑制材料中的Hg空位,Hg空位的浓度控制在1~2×1015/cm3。变温霍尔测试表明,退火材料中的受主杂质能级为8~12 meV,并且与退火条件相关。采用Au掺杂材料和离子注入成结工艺制备了截止波长为14 μm的甚长波红外焦平面器件,测试结果显示,用Au掺杂取代Hg空位掺杂,可以显著提高红外探测器的光响应率,探测器的内量子效率可以达到95%以上。     

特大口径高功率脉冲氙灯的研制取得进展

上海光机所超宽带光放大材料研究小组对铋掺杂玻璃展开了系统的研究。在808nm半导体激光器的泵浦下，发现铋掺杂硅酸盐、锗酸盐、硼酸盐、磷酸盐等系统玻璃在室温下能产生横盖1．2-1．6μm区间的超宽带荧光，荧光寿命一般为几百微秒，荧光半高宽在200-400nm之间。该类发光材料极有望用做光通讯领域中超宽带光放大器以及超宽带可调谐激光器的增益介质，并首次提出了基于低价铋的发光机理。     

掺杂超晶格及其应用前景

掺杂超晶格的层内载流子浓度、有效带隙、二维子带结构和载流子寿命可以用光或外加电势来调制。这导致了掺杂超晶格的电导率、吸收系数、光增益以及发光光谱的光、电可调性。此外,长的载流子复合寿命亦导致了低激发功率下大的光学非线性。这都意味着有可能利用掺杂超晶格制作新型的光电子器件。     

激光烧蚀掺杂氧化硅气凝胶产生SiO_2团簇的实验研究

利用飞行时间质谱方法．研究了多种掺杂氧化硅气凝胶在激光作用下在负离子通道中的团簇形成特性．测得几个主要的ＳｉＯ２团簇系列．讨论了掺杂物在激光能量吸收及传输与团簇产生机理中的重要作用。     

离子注入法Mn掺杂InAs/GaAs量子点的光磁性质

用离子注入法对InAs/GaAs量子点掺杂Mn离子,量子点样品经过快速退火处理后同时具有低温铁磁性和发光性能.注Mn量子点发光峰在退火后蓝移,在较高注入剂量的样品中这种由于互扩散带来的蓝移受到抑制,认为这与样品中的缺陷以及Mn聚集在量子点周围减小量子点所受的应力,同时形成的团簇阻碍了界面上原子的互扩散作用有关.Mn在盖层中形成了GaMnAs和小的Mn颗粒,表现出较好的低温铁磁性.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.