无初始啁啾高斯光脉冲的色散展宽及色散补偿

对无初始啁啾高斯脉冲在普通单模光纤中的传输特性及线性啁啾光纤光栅的色散补偿特性进行了理论分析和数值模拟。结果表明,光纤的色散导致了传输脉冲的展宽,线性啁啾光纤光栅能够实现对展宽脉冲的良好补偿,啁啾光栅时延曲线的平滑度和线性度都是影响其色散补偿性能的重要因素。本文对啁啾光纤光栅的制作及其在色散补偿中的应用有一定的指导意义。     

两种用于色散补偿的取样非线性啁啾光纤光栅的参数选择

本文对采用取样非线性啁啾光纤光栅用于补偿光通信系统中的动态色散进行了研究。提出了二进制取样非线性啁啾光纤光栅所产生信道个数的计算方法。对不同长度的取样光栅的一阶啁啾系数c1和二阶啁啾系数c2 的取值范围进行了研究，并进行了数值仿真。     

二类取样NLCFG的多波长色散补偿特性

根据非线性啁啾光纤光栅可用于对光通信系统中一阶和二阶色散进行补偿的原理 ,系统地研究了二类取样型非线性啁啾光纤光栅的反射谱及时延特性 ,并进行了数值仿真。提出了计算二类取样光栅产生的信道数的计算方法。     

光脉冲在非啁啾光纤光栅中的透射传输研究

基于均匀布拉格光纤光栅的色散特性,阐述了激光啁啾脉冲的传输演变特性,研究了工作于传输方式的非啁啾光纤光栅的透射传输特性.讨论了光源线宽、光栅长度、光栅耦合系数等光栅参数以及初始脉宽、初始啁啾等参量对补偿光纤长度的影响,通过理论计算和模拟实验研究光栅对脉冲的补偿能力.     

光脉冲在非啁啾光纤光栅中的透射传输研究

基于均匀布拉格光纤光栅的色散特性,阐述丁激光啁啾脉冲的传输演变特性,研究了工作于传输方式的非啁啾光纤光栅的透射传输特性。讨论了光源线宽、光栅长度、光栅耦合系数等光栅参数以及初始脉宽、初始啁啾等参量对补偿光纤长度的影响,通过理论计算和模拟实验研究光栅对脉冲的补偿能力。     

高斯脉冲在光纤中传输的光纤光栅色散补偿研究

高斯脉冲在光纤中传输一段距离后，啁啾系数和脉冲宽度均要发生变化，不同啁啾系数和脉冲宽度的高斯脉冲经过啁啾光纤光栅反射后的脉宽压缩特性也不同。本文介绍了啁啾高斯脉冲在光纤中的传输特性以及啁啾高斯脉冲经啁啾光纤光栅反射后的传输特性。理论分析和实验均表明，使用啁啾光纤光栅实现长距离色散补偿时，最佳色散补偿长度与光栅位置有关。     

弱非周期性相位取样啁啾光栅的优化方法

取样光栅可以同时对多个信道进行滤波或色散补偿，所以在波分复用(WDM)系统中有广泛的应用，其中周期相位取样光栅是一种很有前途的设计方法，但周期取样的方法会使取样光栅的所有信道具有相同的色散补偿能力。提出设计弱非周期性相位取样啁啾光栅的优化方法，通过引入一组与信道色散补偿量有关的啁啾控制参数，可使不同信道的色散补偿量存在差异。运用该方法设计出弱非周期的取样光栅后，可用传输矩阵法来模拟该光栅的复反射谱，结果显示通过调整啁啾控制参数，可方便地控制不同信道的色散补偿能力，从而能实现对光纤链路色散与色散斜率的同时补偿，而且取样函数的幅度值的起伏则被完全消除。     

用于10Gb／s WDM系统色散补偿的波长取样啁啾光纤光栅

研制出一种新型色散补偿光纤光栅--波长取样啁啾光纤光栅,它具有10个周期性为0.8nm的波长结构,每个周期的反射特性和色散特性都基本相同,其带宽为0.6nm、峰值反射率为90%、色散量为1300ps/nm、时延抖动小于50ps,光栅长度为10cm.利用此波长取样啁啾光纤光栅,在8×10Gb/s波分复用(WDM)系统中,进行了NRZ码140km标准单模光纤的色散补偿实验,补偿效果良好.     

线性啁啾光纤光栅色散补偿器的特性与设计

线性啁啾光纤光栅可用于光纤色散的补偿,本文用数值方法研究了这类色散补偿器的平均色散、时延波动、反射带宽和反射率等重要特性与光栅长度、啁啾系数、耦合系数等参数的关系,并简要讨论了光栅特性受不同变迹的影响。     

偏振模色散和时延抖动对啁啾光纤光栅色散补偿特性的影响

对存在偏振模色散(PMD)和群时延(GD)抖动的非理想线性啁啾光纤光栅的色散补偿特性进行了研究。实验测量了啁啾光纤光栅的群时延谱和偏振模色散光谱，理论分析和实验测量表明，啁啾光纤光栅差分群时延(DGD)抖动与其时延抖动密切相关。通过数值模拟方法，计算了线性啁啾光纤光栅偏振模色散眼图代价与入射到啁啾光纤光栅色散补偿器的光信号的偏振方向的关系，计算结果表明在使用啁啾光纤光栅色散补偿器时应对光信号的偏振方向进行调整，以获得最佳补偿效果。另外结合实验数据，模拟计算并讨论了非理想线性啁啾光纤光栅群时延抖动和偏振模色散引起的信号的展宽和脉冲形状的劣化。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.