一种基于自适应关键帧的视频序列拼接方法

由于视频帧数量较大,视频序列拼接时容易造成拼接误差大、耗时较多,为有效解决此问题,提出一种基于自适应关键帧的视频序列拼接方法。将固定间隔采样帧作为关键帧并对其进行特征点提取,利用特征点匹配结合RANSAC鲁棒估计算法得到关键帧间单映矩阵,依此计算关键帧间重叠区域,按照重叠区域比例结合折半排序方法重新定位关键帧,将此关键帧作为基准帧,重复帧采样、重叠区域确定、定位后续所需关键帧过程,直至关键帧提取完毕,最后,利用级联单映矩阵和加权融合实现视频序列无缝拼接。实验验证了该方法的有效性。     

一种有效的视频序列拼接方法

针对视频序列拼接中容易造成拼接耗时较长、拼接效果不佳等问题,提出一种有效的视频序列拼接方法,首先,利用时域检测窗口对视频序列进行关键帧的提取,其次,利用相邻关键帧间特征点的匹配结合(random sample consensus)算法以及单应矩阵的级联特性,获取相邻关键帧和非相连关键帧间的匹配矩阵,最后通过融合实现了关键帧所表示的视频序列无缝拼接,效果比较理想。     

基于SURF和改进RANSAC的视频拼接算法

在传统的视频拼接算法中,配准的误差和运动的物体都会使拼接结果产生鬼影,而复杂的融合算法又难以满足实时性要求。针对上述问题,以平行光轴且光心位于同一水平基线位置的双目相机采集的视频图像为研究对象,提出一种基于限定区域和SURF算法的视频拼接方法。针对采集到的具有20%~30%重叠感兴趣区域(ROI)的视频图像,每24帧设置一个关键帧,仅对关键帧的ROI区域采用SURF算法寻找特征匹配点对。然后采用改进的RANSAC算法筛选单应性变换矩阵H,对非关键帧直接采用此单应性变换矩阵H进行图像融合。实验结果表明,采用关键帧计算特征点的方式得到的视频拼接效果能够很好地消除鬼影,同时也能够保证视频融合的实时性。     

基于压缩感知和熵计算的关键帧提取算法

针对关键帧提取问题,提出了一种基于压缩感知理 论和熵计算的关键帧提取算法, 首先通过构造符合有限等距性质要求的稀疏随机投影矩阵,将高维多尺度帧图像特征变换为 低维多尺度帧图像特征, 并形成视频镜头低维多尺度特征列向量组;然后通过随机权值向量与低维多尺度特征向量的 阿达玛乘积运算生成各 帧图像的匹配特征,并根据匹配特征的相似性度量完成镜头内部的子镜头分割;最后通过交 叉熵计算在每个子镜头 中得到可能的关键帧,并由图像熵计算确定最终的关键帧。实验表明,与传统方法相比,本 文算法提取的关键帧能够更精确、更稳定描述视频镜头内容。     

分布视频编码中基于帧间相关性的自适应关键帧选取算法

针对分布式视频编码(DVC)系统中固定周期关键帧选取(PKFS)方法忽视了帧间相关性的缺陷,提出了一种自适应关键帧选取(AKFS)算法。利用图像特征点检测与匹配的方法,将相邻图像的非匹配点作为帧间相关性的近似,把累积或平均非匹配点数超过阈值的帧判定为关键帧。在此基础上,提出改进的帧内插方案,以适应不同长度序列组的边信息生成;将零运动强度的关联帧合并为一帧图像参与编解码,进一步提高了系统的压缩效率。实验结果表明,对于不同运动特性的序列,本文提出的算法可以明显提升边信息帧的重建质量,使系统的率失真性能提高0.9～2.0 dB,并有效降低了编码传输码率。     

改进模型估计的无人机侦察视频快速拼接方法

针对提高无人机侦察视频的拼接速度与效果的问题,提出一种改进模型估计的无人机侦察视频快速拼接方法。首先,基于自适应鲁棒性尺度不变的特征检测子对视频各帧进行基于点的特征匹配。其次,提出改进的随机抽样一致性算法进行模型估计,并去除误匹配点。最后,提出侦察影像快速拼接算法,计算各影像变换到正射拼接图的单应性矩阵,完成视频序列拼接。实验结果表明:改进的随机抽样一致性算法在保证鲁棒性的同时,提高了执行速度;侦察影像快速拼接算法提高了拼接速度,同时改善了拼接效果。     

基于帧间似然比的关键帧提取算法

借助基于内容分析的关键帧提取算法的基本思路，提出了一种基于帧间似然比的关键帧提取算法，算法利用Y、Cb、Cr3个颜色分量的均值和方差作为图像帧的特征参数，有效地描述了帧间相似性，对镜头突变和渐变有较强的鲁棒性，实验表明该方法能较好地提取出视频序列的关键帧。     

基于动态规划的自适应关键帧提取算法

提出一种基于内容的视频检索系统的关键帧提取新算法,把关键帧提取问题建模为一个可以用动态规划算法隶解的全局优化问题.首先建立二值的帧差矩阵来表示低维特征空间中帧与帧之间的相似性度量,然后使用动态规划算法分割帧差矩阵从而提取出关键帧.该算法具有低计算复杂度和对于视频内容的自适应性,而且保持了关键帧的时间顺序.可以方便地根据需要调节关键帧数目.     

一种新的无人机航拍序列图像快速拼接方法

 无人驾驶飞机航拍序列图像的邻近帧间含有大量的相交区域,这些相交区域是进行基于特征的图像拼接的基础,但是也成为了降低拼接效率的冗余信息.因此,本文提出一种既稳定又具有较小时间开销的无人机航拍序列图像的自动拼接方法.利用图像拼接过程中查找到的匹配特征点,自适应提取出适于航拍序列图像快速拼接的关键帧;在分析了序列图像的拼接时的相交区域的运动模型的基础上,建立了无人机航拍序列图像配准过程中的特征搜索区域预测的卡尔曼滤波器,减少了特征搜索和配准的时间;然后给出了详细无人机航拍序列图像的快速拼接方法,实验结果显示,本文的方法具有较好的拼接效果和拼接效率.     

HEVC压缩域的视频摘要关键帧提取方法

为了提高关键帧提取的准确率，改善视频摘要的质量，提出了一种HEVC压缩域的视频摘要关键帧提取方法。首先，对视频序列进行编解码，在解码中统计HEVC帧内编码PU块的亮度预测模式数目。然后，特征提取是利用统计得到的模式数目构建成模式特征向量，并将其作为视频帧的纹理特征用于关键帧的提取。最后，利用融合迭代自组织数据分析算法(ISODATA）的自适应聚类算法对模式特征向量进行聚类，在聚类结果中选取每个类内中间向量对应的帧作为候选关键帧，并通过相似度对候选关键帧进行再次筛选，剔除冗余帧，得到最终的关键帧。实验结果表明，在Open Video Project数据集上进行的大量实验验证，该方法提取关键帧的精度为79.9%、召回率达到93.6%、F-score为86.2%，有效地改善了视频摘要的质量。      

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.