新型长波长InP基谐振腔增强型光探测器

介绍了一种新型长波长InP基谐振腔增强型(RCE)光探测器。通过V(FeCl3):V(H2O)溶液对InGaAs牺牲层的选择性湿法腐蚀,制备出具有InP/空气隙的高反射率分布布拉格反射镜(DBR),并将该选择性湿法腐蚀技术成功地应用到长波长InP基谐振腔增强型光探测器的制备中去,从而彻底解决了InP/InGaAsP高反射率分布布拉格反射镜难以外延生长的问题。所制备出的谐振腔增强型光探测器,其台面面积为50μm×50μm,底部反射镜为1.5对的InP/空气隙分布布拉格反射镜,顶部反射镜靠InGaAsP与空气的界面反射来实现。测试结果表明,该谐振腔增强型光探测器在波长1.510μm处获得了约59％的峰值量子效率,在3V反偏压下暗电流为2nA,3dB响应带宽达到8GHz。     

InP/InGaAs SHBT器件自对准结构设计和工艺实现

从InP湿法腐蚀各向异性特性实验出发,利用传统的基极-发射极自对准工艺和改进的基极-发射极工艺制作了两种InP/InGaAs SHBT自对准结构,比较了两种自对准工艺对减小基极与发射极台面间距的效果,为制作高频率特性InP/InGaAs SHBT提供了工艺途径.     

InP/InGaAs SHBT器件自对准结构设计和工艺实现

从InP湿法腐蚀各向异性特性实验出发,利用传统的基极-发射极自对准工艺和改进的基极-发射极工艺制作了两种InP/InGaAs SHBT自对准结构,比较了两种自对准工艺对减小基极与发射极台面间距的效果,为制作高频率特性InP/InGaAs SHBT提供了工艺途径.     

InP/InGaAs SHBT器件自对准结构设计和工艺实现

从InP湿法腐蚀各向异性特性实验出发，利用传统的基极-发射极自对准工艺和改进的基极-发射极工艺制作了两种InP/InGaAs SHBT自对准结构，比较了两种自对准工艺对减小基极与发射极台面间距的效果，为制作高频率特性InP/InGaAs SHBT提供了工艺途径.     

fT=140GHz,fmax=200GHz的超高速InP DHBT

InP/InGaAs/InP DHBT具有频带宽、电流驱动能力强、线性好、相位噪声低和阈值电压一致性好等优点成为研究热点。通过优化外延材料结构设计和采用四元InGaAsP缓变层消除集电结电流阻塞效应;改进发射极-基极自对准工艺和集电区台面侧向腐蚀工艺,降低Rb和Cbc乘积;优化PI钝化工艺和空气桥互联等工艺,实现了发射极面积为2μm×10μm的自对准InP/InGaAs/InP DHBT器件,其直流增益β约为25,击穿电压BVCEO≥7 V@10μA,在VCE=4 V,Ic=10 mA下,截止频率fT=140 GHz,最高振荡频率fmax=200 GHz,优于同一外延片上的非自对准InP DHB器件,该器件将可应用于高速光通信和微波毫米波通信。     

亚微米栅长的高速大功率GaInAsP/InP结型场效应晶体管

<正> 由于激光二极管与驱动电路的单片集成能除去不希望有的谐振或限制带宽的寄生元件,所以人们对此工艺很感兴趣。在高比特率的系统中,GaInAsP/InP激光二极管被广泛用作高速光源,因此,值得研究一下用与InP晶格匹配的材料制作晶体管的可行性。最近广泛地研究了InP衬底上制作的结型场效应晶体管(JFET),并采用如GaInAs那样的高电子迁移率材料以及采用短栅长(1μm)结构来改进晶体管的性能。日本富士通实验室采用液相外延生长法成功地制作出大功率、高速GaInAsP/InP JFET,在这种器件中由于采用了短栅制作工艺,所以得到的跨导较高(160mS/mm),电流截止     

极高跨导亚微米栅InGa As/InP结型场效应晶体管

InGaAs’InP结型场效应晶体管首次达到了260mS/mm的极高跨导,制作工艺采用能够获得亚微米栅(0.5μm)的化学腐蚀技术。利用自对准工艺,得到了极低的通道电阻。     

InP/GaAsSb/InP双异质结双极晶体管技术发展现状(Ⅱ)

5 制作工艺和优化 Ⅱ型InP DHBT的工艺流程与传统Ⅰ型InP HBT和DHBT工艺基本相同,一般沿用传统的三台面工艺,所不同之处主要是基区材料不同而导致湿法腐蚀和工艺细节变化,此外,由于Ⅱ型DHBT集电区全部采用InP材料,从而减小了由于四元缓变层带来的形成集电区台面时的工艺难度.     

InP基一镜斜置三镜腔型光电探测器理论分析及实验研究

介绍了一种新型长波长InP基一镜斜置三镜腔型（OMITMiC）光电探测器，并对其进行了数值模拟。介绍了该光电探测器的两项关键制备工艺。首先，利用动态掩膜湿法腐蚀技术，通过调节HCl：HF：CrO3腐蚀溶液的选择比。在与InP晶格匹配的In0.72Ga0.28As0.6P0.4外延层上制备出了不同倾角的楔形结构。其次，利用选择性湿法腐蚀技术，通过FeCl3；H2O溶液对In0.53Ga0.47As牺牲层的腐蚀，制备出了具有InP／空气隙的高反射率分布式布拉格反射镜（DBR）。     

基于InP/空气隙分布布拉格反射镜的微机械可调谐光滤波器

采用表面微机械技术制作了一种1 310 nm基于InP/空气隙分布布拉格反射镜的微机械可调谐Fabry-Perot光滤波器.该滤波器的通光孔直径约为70 μm,在1.4 V的调谐电压下,调谐范围达到15 nm.并采用光学传输矩阵方法,分析了斜入射对这种可调谐光滤波器透射谱的峰值半高宽的影响.     

Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 /spl mu/m VCSELs

InAlGaAs/InP-based all-monolithic 1.3 /spl mu/m VCSELs operating continuous wave up to 18/spl deg/C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 /spl mu/m device at 15/spl deg/C is /spl sim/2.8 mA.     

Widely tunable-constant bandwidth monolithic Fabry-Perot filterwith a stable cavity design for WDM systems

The authors report the design and fabrication of micromechanically tunable filters using a novel stable resonator geometry. The filters consist of a 1λ air-gap cavity with two InP/air-gap Bragg reflectors. The design of the micromechanical structure ensures a stable resonator geometry under actuation that provides constant performance throughout the entire tuning range of 65 nm. The devices are micromachined from a monolithic all epitaxial InP-InGaAs structure that can be integrated with an InP-based photo detector or emitter in a low-cost component for coarse wavelength division multiplexing systems operating in the 1.3 or 1.55 μm band     

Record tuning range of InP-based multiple air-gap MOEMS filter

Continuously tunable Fabry-Perot filters based on multiple InP/air-gap MOEMS technology are presented. Record wavelength tuning >112 nm with an actuation voltage of only 5 V is demonstrated. The FWHM remains constant over the entire tuning range. The stopband covers both the second and third optical telecommunication window (1250-1800 nm).     

Integration of magnetooptical waveguides onto a III-V semiconductorsurface

Optical waveguides fabricated on a yttrium iron garnet (YIG) substrate are integrated onto a semiconductor surface by using ridge waveguides patterned onto a prefabricated recess in the YIG surface. The recess separates the waveguides from the semiconductor substrate with an air-gap. This structure makes it possible to avoid coupling light within the YIG waveguides into the semiconductor substrate which has a higher refractive index. The excess optical loss due to the coupling can be as low as ⩽0.1 dB/cm with a 1-μm-wide air-gap. The calculated coupling loss is confirmed by comparing the guided TE and TM modes     

Highly selective and widely tunable 1.55-μm InP/air-gapmicromachined Fabry-Perot filter for optical communications

The authors report, for the first time, a highly selective and widely tunable optical filter at 1.55 μm using a Fabry-Perot resonator with micromachined InP/air-gap distributed Bragg reflectors. The minimum resonance full-width at half-maximum (FWHM), as measured by microreflectivity experiments, is close to 0.4 mm (around 1.55 μm) and is compatible with wavelength-division multiplexing specifications of optical telecommunications. The tuning range is 62 nm for a tuning voltage of 14 V. The FWHM is kept below 1 nm over a 40 nm tuning range     

Fabrication of ultrathin and highly flexible InP-based membranes for microoptoelectromechanical systems at 1.55 /spl mu/m

In this letter, tunable microcavities have been fabricated to evaluate their tunability in dependence on the membrane thickness. The membrane thickness has been decreased from 615 nm down to a record thickness of 123 nm yielding in a maximum mechanical tunability of 15.15 nm/V/sup 2/. Furthermore, a three-period /spl lambda//4 InP/air-gap high reflective mirror (R > 99.8% at 1.55 /spl mu/m) with a record wide stopband of more than 1100 nm has been fabricated. These results are achieved thanks to specific metal-organic vapor-phase epitaxy growth parameters.     

A 183 GHz f/sub T/ and 165 GHz f/sub max/ regrown-emitter DHBT with abrupt InP emitter

Small-area regrown emitter-base junction InP/In-GaAs/InP double heterojunction bipolar transistors (DHBT) using an abrupt InP emitter are presented for the first time. In a device with emitter-base junction area of 0.7 /spl times/ 8 /spl mu/m/sup 2/, a maximum 183 GHz f/sub T/ and 165 GHz f/sub max/ are exhibited. To our knowledge, this is the highest reported bandwidth for a III-V bipolar transistor utilizing emitter regrowth. The emitter current density is 6/spl times/10/sup 5/ A/cm/sup 2/ at V/sub CE,sat/ = 1.5 V. The small-signal current gain h/sub 21/ = 17, while collector breakdown voltage is near 6 V for the 1500-/spl Aring/-thick collector. The emitter structure, created by nonselective molecular beam epitaxy regrowth, combines a small-area emitter-base junction and a larger-area extrinsic emitter contact, and is similar in structure to that of a SiGe HBT. The higher f/sub T/ and f/sub max/ compared to previously reported devices are achieved by simplified regrowth using an InP emitter and by improvements to the regrowth surface preparation process.     

Stabilized extrinsic fiber-optic Fizeau sensor for surface acousticwave detection

A surface acoustic wave sensor based on an in-line extrinsic Fizeau interferometer is described. A single-mode fiber, used as the input/output fiber, and a multimode fiber, used solely as a reflector, form an air-gap that acts as a low-finesse Fabry-Perot or Fizeau cavity. The Fresnel reference reflection from the glass/air interface at the front of the air-gap interferes with the sensing reflection from the air/glass interface at the far end of the air-gap. Strains in the thin-walled silica tube housing the two fibers change the length of the air-gap, thereby altering the phase difference between the reference and sensing reflections. A theoretical analysis of the interaction between the strain induced by elastic stress wave fields and the fiber sensor housing is presented     

Photoluminescence in InP hydrogenated by plasma exposure

Hydrogenation of an InP surface has been achieved by hydrogen plasma. Exposure in the limited temperature range 95-100 degrees C gives rise to a remarkable enhancement of the photoluminescence (PL) intensity by a factor of 5.4 compared with that of unexposed InP. On the other hand, a reduction in the PL intensity occurs at temperatures a little higher than 100 degrees C which leads to surface damage owing to preferential dissociation of phosphorus from the surface of InP. It is confirmed by secondary ion mass spectroscopy (SIMS) that hydrogen with concentration of 1*10/sup 18/ cm/sup -3/ diffuses into the bulk InP down to a depth of 300 nm.<>     

InP/GaAsSb/InP双异质结双极晶体管技术发展现状(Ⅰ)

InP/GaAsSb/InP双异质结双极晶体管(DHBT)以其独特的交错Ⅱ型能带结构,在频率特性、击穿特性和热特性等方面较传统的InP/InGaAsSHBT与InP/InGaAs/InPDHBT等显示出极大的优越性。对InP/GaAsSb/InPⅡ型DHBT技术的提出、外延层结构设计与生长、器件结构设计、器件制造工艺与优化以及国内外发展情况研究水平、发展趋势和商业化情况进行了系统的回顾和展望。指出结合垂直方向材料结构优化缩小器件尺寸和采用微空气桥隔离基极电极结构是InP/GaAsSb/InPDHBT向THz截止频率发展的最重要的技术路线。