SDR中新型自适应复分接芯片的板级验证

针对多用户型软件无线电(SDR)的发展需求,基于FPGA,采用新型时钟提取方案,设计实现了自适应数字复分接芯片的板级验证平台,详细阐述了平台的软、硬件设计及自适应实现过程,给出了平台的各项测试指标.测试结果表明,该平台可满足数字复分接芯片的验证需求.     

软件无线电关键技术的新趋势（下）

DSP是限制软件无线电发展的瓶颈问题，其数据处理速度和精度直接关系到软件无线电台能否实现。目前采用的技术方案主要是数字信号处理技术(DSP)、专用集成电路(ASIC)、现场可编程门阵列(FPGA)以及这几种技术的结合。高速DSP芯片是软件无线电的核心部分。     

基于OMAP软件无线电平台设计与实现

文章根据软件无线电的基本原理,使用OMAP3530处理器和FPGA,设计了一个新型的软件无线电平台,以满足高性能、低功耗和便携性的需求。     

一种低成本星载软件无线电平台设计

通过对低成本星载软件无线电平台的应用需求、技术指标和空间环境的特性进行研究,提出了一种基于FPGA+MCU+AD+DA架构的低成本星载软件无线电平台解决方案。详细地介绍了星载软件无线电平台硬件架构设计,利用器件选型、 FPGA加固和多重冗余备份等方式,实现星载软件无线电平台低成本、高可靠、高性能的要求;并基于该平台开展了QPSK波形验证,验证结果表明,该平台性能优越,具有低成本、高可靠性、高性能的特点,具有较强的灵活性、开放性和易拓展性,满足新一代低成本星载软件无线电平台需求。     

超宽带信号监测处理中关键技术研究

以瞬时带宽超过1 CHz的超宽带信号监测处理为应用背景,利用高性能FPGA和超高速ADC实现了超高速数据采集、海量数字存储的技术方案.基于此方案的终端处理系统采用软件无线电技术架构,对1 GHz超宽带信号具有实时监测处理功能、实时引导干扰能力;实验测得系统采样速率600 Msps时系统信纳比达到44dB,有效位数为7.1b,达到了较好的实验效果.     

超宽带多发多收雷达系统的信号源设计及实现

多发多收超宽带雷达和通信系统是当今研发热点,国内外多有相关报道,而信号源的设计及实现是其关键技术之一。目前用扩频模块来实现GHz 脉冲信号的信号源,结构复杂、成本高。对此,设计和制作了一款由可编程逻辑器件FPGA 和DDS 芯片组成并产生GHz 脉冲信号的信号源,其核心是ADI公司的DDS芯片AD9914和Xilinx公司的Kintex-7系列FPGA芯片作控制芯片,此信号源获得了高达1.4 GHz的大带宽多通道同步雷达脉冲信号,频率切换时间达到ns级,且频率、相位和幅值都可控,其性能在国内具有先进性,并具有实际应用价值。     

在软件无线电调制解调器功能中使用硬件加速单元

前言FPGA已经不再单纯应用在芯片与系统之间的直接互联层,在软件无线电(SDR)中,FPGA逐渐被用做通用运算架构来实现硬件加速单元,在降低成本和功耗的基础上提高了性能。SDR调制解调器的典型实现包括通用处理器(GPP)、DSP和FPGA。而且,FPGA架构可以结合专用硬件加速单元,用来卸载     

一种改进的小型化超宽带平面倒锥缝隙天线

提出了一种改进的超宽带平面倒锥缝隙贴片天线,通过调整倒锥缝隙和倒锥贴片的形 状,在更小尺寸条件下,实现了超宽带性能。天线总体尺寸为40 mm×40 mm× 1.5 mm。采用仿真软件分析了该天线的阻抗带宽、辐射方向图及增益特性。结果显示,该 天线的回波损耗小于-10 dB的带宽为2.2 GHz到大于16 GHz,在低频段具有全 向性,在3～14 GHz频段增益随频率的变化在4～7 dB之间。     

基于DSP+FPGA的高速数字信号处理平台

本文介绍了一种高速数字信号处理平台的实现方案,主要是基于FPGA DSP的结构来实现高速数字信号处理.该方案采用先进的FPGA和DSP芯片,借鉴了软件无线电的思想,通过DSP芯片对FPGA芯片的动态配置来实现具有通用性、可扩充性的硬件平台,并对其硬件结构和软件工作流程进行了阐述.     

一种试验场无线电辐射源模拟器测量与监视系统

基于超宽带采集存储技术构建了测量与监视系统，实现了对无线电监测系统试验场中的模拟无线电监测目标信号群的测量与监视。重点研究了基于并行交替采样的超宽带信号高速采集技术、基于固态磁盘(Solid-State Disk,SSD)阵列流水拼接的海量数据实时存储技术和基于统一计算设备架构(Compute Unified Device Architecture,CUDA)的超宽带信号频谱分析技术等关键技术。测量与监视系统工作频率范围为1.5 MHz～22 GHz，单通道采集速率可达5 GB/s，三通道实时带宽达到6 GHz，最大存储容量达到48 TB，满足对无线电监测系统试验场中通信、导航、雷达等多路模拟无线电监测目标信号进行测量与监视的使用需求。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.