Design and simulation of optoelectronic oscillator with micro ring resonator and radio frequency amplifier modelling at 110 GHz

There is an increasing need for high performance oscillators as the faster transmission networks demand for high frequency signals. Opto-electronic oscillators (OEO) enable us to make better oscillators in terms of size, weight and power. In this paper, photonic integration is proposed for realizing the OEO with micro ring resonator (MRR) and radio-frequency (RF) amplifiers of monolithic microwave integrated circuit (MMIC), which can be used for generating 110 GHz sine wave. The OEO architecture is proposed and block diagram developed considering Silicon based MRR and three-stage RF amplifier based on GaN high-electron-mobility transistor (HEMT). A simulation model is developed according to the Klein model of MRR and is validated against the calculated performance parameters. MRR dimensions are calculated as with silicon on insulator (SOI) technology and a radius 5.27 μm for the device is derived. Free spectral range (FSR) of 48.52 nm and filter rejection ratio of 16.79 dB are obtained for this device. The proposed RF amplifier is modelled with GaN parameters derived from high frequency pinch-off model and with power amplifier considerations. The gain for this amplifier is obtained as 10.6 dB. The OEO design is developed in this project in such a way that the system can be manufactured with the existing methods.     

雪崩PIN二极管中的电流丝运动

The motion of current filaments in avalanching PIN diodes has been investigated in this paper by 2D transient numerical simulations.The simulation results show that the filament can move along the length of the PIN diode back and forth when the self-heating effect is considered.The voltage waveform varies periodically due to the motion of the filament.The filament motion is driven by the temperature gradient in the filament due to the negative temperature dependence of the impact ionization rates.Contrary to the traditional understanding that current filamentation is a potential cause of thermal destruction,it is shown in this paper that the thermally-driven motion of current filaments leads to the homogenization of temperature in the diode and is expected to have a positive influence on the failure threshold of the PIN diode.     

Micro-vibration parameters fast demodulation algorithm and experiment of self-mixing interference

Self-mixing interference （SMI） technique can be used for measuring vibration, displacement, velocity and absolute distance. In this paper, a simple demodulation algorithm for fast measuring frequency and amplitude of a simple harmonic vibration target is proposed based on the basic theoretical model of self-mixing interference effects. The simulative results show that the error between the vibration parameters which are demodulated by this algorithm and initial settings merely results from the sample rate. Further, the experimental system of self-mixing vibration measurement is built. The experimental results have a good agreement with simulation analyses. The maximum error of frequency demodulation is less than 1 Hz in our experiment.     

An improved temperature-dependent large signal model of microwave GaN HEMTs

Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability design and assessment. In this paper, an improved temperature-dependent model for large signal equivalent circuit modeling of GaN HEMTs is proposed. To accurately describe the thermal effects, a modified nonlinear thermal sub-circuit which is related not only to power dissipation, but also ambient temperature is used to calculate the variations of channel temperature of the device; the temperature-dependent parasitic and intrinsic elements are also taken into account in this model. The parameters of the thermal sub-circuit are extracted by using the numerical finite element method. The results show that better performance can be achieved by using the proposed large signal model in the range of -55 to 125℃ compared with the conventional model with a linear thermal sub-circuit.     

Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region（DDR） impact avalanche transit time（IMPATT） devices operating at both millimetre-wave（mm-wave） and terahertz（THz） frequencies. A rigorous large-signal（L-S） simulation based on the non-sinusoidal voltage excitation（NSVE） model developed earlier by the authors is used in this study. At first,a simulation study based on avalanche response time reveals that the upper cut-off frequency for DDR diamond IMPATTs is 1.5 THz, while the same for conventional DDR Si IMPATTs is much smaller, i.e. 0.5 THz. The L-S simulationresultsshowthattheDDRdiamondIMPATTdevicedeliversapeakRFpowerof7.79Wwithan18.17%conversion efficiency at 94 GHz; while at 1.5 THz, the peak power output and conversion efficiency decrease to6.19mWand8.17%respectively,taking50%voltagemodulation.AcomparativestudyofDDRIMPATTsbasedon diamond and Si shows that the former excels over the later as regards high frequency and high power performance at both mm-wave and THz frequency bands. The effect of band to band tunneling on the L-S properties of DDR diamond and Si IMPATTs has also been studied at different mm-wave and THz frequencies.     

Concerning the maximum frequency limits of Gunn operators

The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode－the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5 μm, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. The authors posit that this theoretical restriction is a consequence of limits of the hydrodynamic models by which it was determined. Study of these devices by more advanced Monte Carlo techniques, which simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5 μm, which is already being approached by the experimental evidence shown in planar and vertical devices exhibiting Gunn operation at 0.6 μm and 0.7 μm. It is shown that the limits for Gunn domain operation are determined by the device length required for the transferred electron effect to occur(approximately 0.15 μm, which as demonstrated is largely field independent) and the fundamental size of the domain(approximately 0.3 μm). At this new length, operation in fundamental mode at much higher frequencies becomes possible－the Monte Carlo model used predicts power output at frequencies over 300 GHz.     

一种包含热效应的InP DHBT大信号模型及其Verilog-A实现

A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previous model in which the double heterojunction effect,current blocking effect and high current effect in current expression are considered,the effect of bandgap narrowing with temperature has been considered in transport current while a formula for model parameters as a function of temperature has been developed.This model is implemented by Verilog-A and embedded in ADS.The proposed model is verified with DC and large signal measurements.     

A 1-GHz Charge Pump PLL Frequency Synthesizer for IEEE 1394b PHY

The design procedure of an 1-GHz phase-locked loop (PLL)-based frequency synthesizer used in IEEE 1394b physical (PHY) system is presented in this paper. The PLL’s loop dynamics are analyzed in depth and theoretical relationships between all loop parameters are clearly described. All the parameters are derived and verified by Verilog-A model, which ensures the accuracy and efficiency of the circuit design and simulation. A 4-stage ring oscillator is employed to generate 1-GHz oscillation frequency and is divided into low frequency clocks by a feedback divider. The architecture is a third-order, type-2 charge pump PLL. The simulated settling time is less than 4μs. The RMS value of period jitter of the PLL’s output is 2.1 ps. The PLL core occupies an area of 0.12 mm2, one fourth of which is occupied by the MiM loop capacitors. The total current consumption of the chip is 16.5 mA. The chip has been sent for fabrication in 0.13 m complementary metal oxide semiconductor (CMOS) technology.     

Laser Driver for Optic Fiber Gyro with 4 mA to 200 mA Drive Current

Abstract---The stability of the drive current is very important for a laser driver, while it is difficult to maintain the current stable at a high value for the laser driver. On the other hand, the range of the drive current is expected to be as wide as possible to be applied to different kinds of lasers. In this paper, a high current laser driver for the superluminescent light emitting diode （SLED） is presented, which is used in the optic fiber gyro embedded by a 0.35 μm bipolar complementary metal-oxide-semiconductor transistor （BiCMOS） process. The laser driver provides automatic power control and certain value of current determined by the external resister. The system is based on the optic-electric feedback theory and uses the closed-loop control technique to maintain the drive current stable. The system is capable of producing stable current ranges from 4 mA to 200 mA when the value of external resister changes.     

The On-line Calibration Technology of System Delay Based on Dynamic Delay Cancellation for Generalized TT＆C Channel Simulator

An on-line system delay calibration method based on dynamic cancellation for generalized high-precision Tracking, telemetry and command （TT＆C） channel simulator is proposed. This method manages to estimate the time-varying system delay in real time through the coupling signal of input signal and simulated output signal, and then modifies the simulated parameters by the estimated value. With this method, it effectively avoids the effect of time-varying system delay caused by temperature drift, aging of components and other factors on high precision simulation. In this paper, the dynamic cancellation technology, which is the kernel and foundation of this method, is presented to eliminate the simulated motion law between the input signal and output signal. The time delay estimation method based on cross correlation and area barycenter arithmetic is introduced to estimate the time-varying system delay. The simulation results show the validity and high-precision performance.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-