激光再制造机器人待加工零件形貌三维重建

采用双目摄像机结合结构光组成主动视觉测量系统,并与机器人耦合,构建了一种具有视觉功能的智能激光加工机器人,能够感知各种复杂曲面轮廓,重建三维形貌。系统由六自由度机器人、双目摄像机和结构光发射器组成。机器人带动双目摄像机和结构光发射器运动,既实现多视角测量,消除测量中的"死角",重建工件的完整三维形貌,又将测量到的点云数据转换到机器人坐标系。阐述了测量原理和数学模型,进行了单摄像机内外参数的标定,双目摄像机相对关系的标定,双目摄像机与机器人之间的手眼关系标定,得到摄像机内参数矩阵,手眼关系矩阵,机器人与世界坐标系关系矩阵。对双目图像进行大步距图像分割,提取目标区域,平滑降低图像噪声,重心法提取亚像素级结构光条纹中心,根据极线约束进行左右条纹配准,三维算法得到空间点坐标,可方便地转换到世界坐标系,实现全局坐标的统一。     

双平面法标定的双目视觉三维测量系统

针对传统摄像机标定过程复杂、三维测量精度不高的问题,提出了一种基于投影直线相交的双目视觉三维测量方法,并给出了基于神经网络的标定方法。根据摄像机成像特点,利用双标定平面上的点求取投影直线方程;针对摄像机成像复杂的畸变模型,利用BP神经网络对复杂非线性映射关系的强大逼近能力,对左右两台摄像机于远近标定平面处分别进行隐式标定,得到图像像素坐标到平面模板二维物理坐标的映射关系;设计制作了试验平台,采用手工辅助的方法获得网格模板训练样本。此标定方法完全适用于大视场、近距离、高精度的双目视觉传感器。试验结果表明,系统对空间已知长度的测量结果误差约为0.109 mm,测量精度较高。     

智能坐标测量中零件位姿的单目立体识别

为了使三坐标测量机快速准确地识别出被测零件的位姿,提出了一种基于三坐标测量机平动的单目立体视觉识别方法,对该方法的原理、位姿参数的求解和识别过程进行了研究。根据双目立体视觉原理,以三坐标测量机带动摄像机沿x轴或y轴平移,在两个不同位置分别拍摄被测零件的一幅图像,经过同名像点的匹配实现单摄像机立体视觉测量,得到被测零件上各特征点在摄像机坐标系中的三维坐标;由摄像机标定参数,进一步计算出各特征点在机器坐标系中的三维坐标;再结合各特征点在零件CAD坐标系中的对应坐标,求解出被测零件的位姿参数。进行了识别实验,实验数据表明该识别方法是可行的,满足实时测量要求。     

基于双线投影与线面约束的3D扫描测量系统研究

将双目传感器和线结构光有机地结合到一起,设计了一套能够对大尺寸被测物进行无导轨三维扫描的测量系统。通过标定实现双目传感器与结构光传感器坐标系的统一。提出了一种双线投影模型,实现了双目标记点的立体匹配和标记点传感器坐标的测量。设计了基于线面约束的结构光测量模型,实现了物体表面光条三维信息的获取。采用空间几何相对不变性原则实现标记点传感器坐标和世界坐标的全局匹配,进而确定在测量位置处传感器坐标系与世界坐标系的转换关系。最终将传感器实时扫描测量的物体表面的三维点云数据转换到世界坐标系下,实现对被测物三维的扫描测量,工作距离下扫描测量精度优于0.08 mm。     

采用张量分解的四摄像机测量系统标定方法

摄像机标定是精密三维视觉测量的关键,为了实现对多摄像机测量系统的精确标定,首先分析了现有基于一维靶标的多摄像机标定方法的优缺点,并针对其不足,提出了一种基于张量分解的多相机标定方法,该方法主要包括以下三个方面的内容:(1) 利用透视投影成像模型和刚体变换理论建立多摄像机测量的数学模型;(2) 分析现有基于基本矩阵的多摄像机标定方法存在标定结果之间相互耦合的问题;(3) 将四摄像机测量系统的四焦张量引入标定过程中,利用一维标定靶标的成像点坐标求解的四摄像机测量系统的四焦张量,并根据四焦张量的简化求解方法来精炼获取摄像机矩阵。最后,通过实验验证了该方法的有效性和准确性,实验结果表明:(1) 四摄像机三维测量系统的标定可仅通过三组标定靶标图像即可实现,且标定操作效率相对于基本矩阵法更高;(2) 在4000 mm×4000 mm×2000 mm范围内,多摄像机测量系统的精度达到4 mm (3σ),相比于传统方法具有更精确的标定结果。满足室内运动目标位姿精确测量的要求。     

基于立体视觉标定方法的改进研究

摄像机标定是立体视觉研究与非接触测量的重要组成部分,是精密视觉测量的基础,传统的标定需要建立复杂的数学模型,从而描述双目视觉中三维空间物点坐标和两个摄像机像面像点坐标间的非线性关系。而神经网络可以有效地处理非线性映射问题。本文介绍一种改进的RBF神经网络,并对该网络标定法与传统标定方法及BP网络标定法的标定结果进行比较。实验结果表明:基于改进RBF神经网络的双目视觉标定方法能获得较高的标定精度。     

基于双目视觉的工件尺寸三维测量

针对传统的接触式测量方法存在测量速度慢、效率低等问题,本文基于双目视觉视差原理,采用了一种双目视觉测量方法。首先,利用双目视觉系统采集带有标志圆的靶标图像对,进行摄像机标定;然后,采用Canny自适应算子检测图像的边缘,通过椭圆拟合来确定特征点,在极线约束条件下完成图像的立体匹配,最后将图像坐标换算成世界坐标系下的三维坐标。实验结果表明,该方法对于有标志点的被测对象具有测量精度高的特点,误差在0.07mm以下。     

基于全局空间控制的高精度柔性视觉测量系统研究

针对传统机器人视觉测量系统中测量精度受机器人绝对定位精度限制的问题,构建了基于全局空间控制的高精度柔性视觉测量系统并研究其标定技术。通过全局空间测量定位系统实现机器人末端工具的高精度实时控制,可以突破机器人自身定位精度的限制,充分发挥其高度柔性的运动特性。为实现系统高精度测量,提出一种基于单应性矩阵的视觉传感器外参标定方法,该方法仅需对所设计的平面靶标进行一次成像,结合激光跟踪仪进行坐标转换即可实现传感器坐标系与外部参考坐标系之间坐标转换关系的精确标定。实验结果表明,基于全局空间控制的机器人视觉测量系统在其工作空间中距离测量精度优于0.2/mm,较传统的机器人视觉测量系统得到显著提高。     

基于绝对相位靶的摄像机标定仿真与实验研究

摄像机标定是结构光三维传感技术中联系测量系统内外参数与三维坐标之间的重要环节.基于灰度信息提取特征点的摄像机标定方法易受图像噪声、对比度等因素的影响.提出一种基于绝对相位靶(APT)的摄像机标定方法,采用时间相位展开算法计算绝对相位,提取相位值为4π整数倍的特征点,采用局部窗口最小二乘拟合算法计算特征点的精确亚像素坐标...     

基于神经网络的双目视觉摄像机标定方法的研究

摄像机标定是精密视觉测量的基础，传统的双目标定位需要建立复杂的数学模型。神经网络可以有效地处理非线性映射问题，本文介绍了一种BP神经网络，可以很好地描述双目视觉中三维空间特征点坐标和2个摄像机对应像点间的非线性关系，并且为了提高网络的学习能力引入了动态因子。将神经网络标定方法与传统的常用标定方法比较，实验结果表明，基于神经网络的双目视觉标定方法能获得较高的标定精度。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its