制冷型大面阵红外探测器研制进展

作为未来红外探测器的主流发展方向之一,大面阵红外探测器近年来的发展非常迅速,主要用于天体物理学、地球科学和行星科学等领域,并且是未来地球天气与气候描述、空气污染检测方面的一种主要工具。随着面阵规格和材料尺寸的增加,器件的制作难度也越来越大。重点介绍了目前国际上最常见的两种制冷型红外探测器——HgCdTe和InSb红外探测器。结合国内外的一些文献,总结了这两种红外探测器的大面阵技术的发展状况,并重点介绍了当前全球行业领先的几家红外探测器厂商的相关产品及技术水平。最后指出了大面阵红外探测器研制目前存在的主要问题。     

锑基Ⅱ类超晶格红外探测器——第三代红外探测器的最佳选择

以多色、大面阵、高性能、低成本为特征的第三代红外探测器是当前红外探测器的发展方向及目标.InAs/GaInSb Ⅱ类超晶格探测器因为独特的断代能带结构以及自身存在的材料和器件优势,在大面阵长波红外探测器、高温中波红外探测器、中波双色探测器以及甚长波红外探测器领域显示出优异的器件性能和技术成熟性,成为第三代红外探测器技术...     

数字红外焦平面探测器（特邀）

相比传统的模拟红外焦平面探测器,数字红外焦平面探测器具有很多技术优势,是红外焦平面探测器技术的重要发展方向。首先,介绍了数字红外焦平面探测器国内外的研发现状,从信号处理以及应用的角度分析了模拟红外焦平面探测器与数字红外焦平面探测器的区别与特点;然后,又详细介绍了列级ADC数字读出集成电路以及数字像元读出集成电路的架构及具体电路模块,分析了数字读出集成电路的各模块电路及与性能的关系,并展望了数字读出集成电路的技术发展趋势。随着红外焦平面探测器向大面阵、小像元及高性能发展,对数字读出集成电路也提出更高的技术要求。通过读出集成电路架构以及模块电路的技术提升,列级ADC数字读出集成电路将普遍应用于大面阵、小像元红外焦平面探测器,而数字像元读出集成电路将普遍应用于长波红外焦平面探测器。     

制冷焦平面探测器组件冷平台材料研究进展

红外焦平面探测器在航空、航天、军事等多个领域具有广泛应用。我国亟需发展大面阵、轻量化和高可靠性的红外焦平面探测器及其杜瓦组件。介绍了国内外红外探测器组件的冷平台材料选用情况,包括Fe-Ni膨胀合金、低膨胀高导热合金和新型陶瓷等。总结了红外焦平面探测器热失配应力的来源以及减小热失配应力的解决方案。最后给出了红外探测器研制过程中的冷平台材料选取建议以及在红外焦平面探测器组件发展趋势下需要重点研究的相关技术。     

大尺寸碲镉汞材料研究现状与趋势

随着大面阵红外探测器技术研究越来越深入,大尺寸红外探测器材料技术成为制约红外探测器技术发展的重要环节。本文介绍了Sofradir公司、Teledyne公司、Raytheon公司、AIM公司红外探测器材料研究的现状,从生长方式、衬底选择等方向分析大尺寸碲镉汞材料研究现状与趋势。     

II类超晶格红外探测器在遥感中的应用前景

红外探测器是空间红外遥感器的核心部件,随着空间红外遥感器的发展,对红外探测器也提出了更高要求,需要向双色或多色、均匀大面阵、低热耗、低暗电流、高量子效率、以及高可靠性等方向发展。本文从空间红外遥感器对红外探测器的需求分析、II类超晶格红外探测器的原理及优点、II类超晶格红外探测器国内外研制现状、II类超晶格红外探测器在空间红外遥感器中的应用展望等四个方面,重点介绍了II类超晶格红外探测器针对空间红外遥感应用中的优势,分析了II类超晶格红外探测器在空间红外遥感应用中需要攻克的难点,最后,介绍了II类超晶格红外探测器在空间红外遥感器中的应用前景。     

国外量子阱红外焦平面探测器的发展概况

以GaAs／A1GaAs为代表的Ⅲ-Ⅴ量子阱红外焦平面探测器因其成熟的材料生长和器件工艺技术,一直是与传统的HgCdTe红外探测器并驾齐驱的红外探测器。近十年来随着对器件结构、机理及器件工艺的不断改进,大面阵Ⅲ-Ⅴ量子阱红外焦平面器件发展显著。本文介绍了量子阱红外焦平面探测器的优越性及存在的问题,当前欧美国家量子阱红外焦平面探测器的最新研究发展、产品现状及应用前景。     

大面阵碲镉汞芯片的热应力分析与优化

随着红外焦平面探测器面阵规模的不断扩大,大面阵碲镉汞芯片的热应力进一步恶化,受温度冲击后更容易产生损伤,进而直接影响探测器的使用,甚至导致探测器失效。这已成为大面阵探测器生产工艺亟需解决的问题。借助仿真手段研究了大面阵碲镉汞芯片的低温损伤原因,并结合小面阵探测器进行了对比分析。结果表明,铟柱与碲镉汞接触边缘部位因应力集中明显而成为损伤的起源点。不同材料的选择以及结构尺寸的设计有助于降低大面阵碲镉汞芯片的热应力和提高其工作可靠性。     

超大面阵碲镉汞探测器低应力设计及有限元分析

随着碲镉汞材料和器件技术的不断发展,满足大视场、超高分辨率应用需求的超大阵列规模的红外探测器逐步投入工程应用,超大面阵探测器芯片的低温可靠性成为封装技术的重点研究内容。以某超大面阵碲镉汞混成芯片为研究对象,采用有限元仿真分析法研究了冷头材料体系、冷台外径、冷台的结构形式等因素对混成芯片低温应力和芯片光敏面低温变形的影响规律,最终优化设计出一套可满足超大面阵芯片低温可靠性要求的冷头结构和材料体系。仿真结果显示,该冷头体系硅电路低温下最大应力约为70 MPa,碲镉汞光敏区在低温下的变形约为30■m。仿真结果能满足工程应用可靠性要求的经验仿真阈值,有效改进了超大面阵红外探测器的高可靠小型化封装技术。     

红外探测器杜瓦非概率可靠性设计方法

杜瓦是大面阵红外焦平面探测器组件的重要组成部分,为其提供光学、机械、热学和电学接口,因此对该杜瓦结构的可靠性有较高要求。由于此类产品样本数极少,传统的基于概率模型的可靠性设计方法在理论和应用上均存在较大的问题。有鉴于此,提出了基于区间分析的结构非概率可靠性模型,并将所建模型用于大面阵红外焦平面探测器杜瓦结构的可靠性优化设计。研究结果表明,非概率可靠性设计方法只要求已知设计参数的界限,而不要求其具体的分布形式,所需数据较少,特别适用于小子样大面阵红外焦平面探测器杜瓦的可靠性设计。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.