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分析了 MFIS FET的工作机理以及影响 MFIS电容的存储窗口特性的因素 ,提出用存储窗口与铁电薄膜正、负矫顽电压的差值来评价存储窗口特性 ,制备了 Au/Cr/PZT/Zr O2 /Si的 MFIS结构并研究了其存储窗口特性 ,存储窗口随 Zr O2 的厚度变化呈现一个极大值 ,甚至会出现 C-V曲线方向的变化 ,而 PZT薄膜的厚度增大会导致窗口增大 ,这是由于界面效应以及在铁电层和介质阻挡层上电压分配关系的不同而造成的 ,这一结果与前面的分析很好地吻合。当 Zr O2 和 PZT的厚度分别为 3 0 nm和 2 5 0 nm、扫描电压从 -5 V到 +5 V变化时 ,存储窗口大小为 2 .5 V,与相应的铁电薄膜的正、负矫顽电压的差值的比为 0 .8。 相似文献
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MFIS结构的C-V特性 总被引:2,自引:2,他引:0
研究了运用SOL-GEL方法制备的Au/PZT(铅锆钛)/ZrO2/Si结构电容即 MFIS(Metal/Ferroelectric /Insulator/Semiconductor)电容的方法,并对其进行了SEM、C- V特性测试及ZrO2介质层介电常数分析 .研究了C-V存储窗口(Memory Window)电压与铁电薄膜和介质层厚度比的关系,得出MFIS电容结构中最佳铁电薄膜和介质层厚度比为7~10左右 ,在外加电压-5V~+5V时存储窗口可达2.52 V左右 . 相似文献
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将ZrO2和PZT的sol-gel薄膜制备技术应用到非破坏性读出铁电存储器中,制作出应用Al/PZT/ZrO2/p-Si结构的MFIS电容和单管MFIS FET,研究了MFIS电容的界面和存储窗口特性,结果表明ZrO2介质阻挡层和Si衬底以及PZT的附着良好,在±5V测试电压、1MHz测试频率下,存储窗口电压为2.6V左右,与相应的铁电薄膜的正、负矫顽电压差值的比为0.8.对于宽长比为500μm/50μm器件,采用栅极与源极、漏极写入方式,±10V时在写入电压下得到理想的输入-输出特性;小尺寸的40μm/8μm器件在±5V写入电压下特性较好. 相似文献
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将ZrO2和PZT的sol-gel薄膜制备技术应用到非破坏性读出铁电存储器中,制作出应用Al/PZT/ZrO2/p-Si结构的MFIS电容和单管MFIS FET,研究了MFIS电容的界面和存储窗口特性,结果表明ZrO2介质阻挡层和Si衬底以及PZT的附着良好,在±5V测试电压、1MHz测试频率下,存储窗口电压为2.6V左右,与相应的铁电薄膜的正、负矫顽电压差值的比为0.8.对于宽长比为500μm/50μm器件,采用栅极与源极、漏极写入方式,±10V时在写入电压下得到理想的输入-输出特性;小尺寸的40μm/8μm器件在±5V写入电压下特性较好. 相似文献
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利用正向交流(ac)小信号方法对发光二极管(LED)的电容-电压特性进行测量,可以观察到发光二极管中的负电容现象。首次提出测量到的负电容现象是表象,不存在负电容;首次提出发光二极管P-N结的结电容在特定的正向电压范围内等效于可变电容,特定参数的可变电容使电流的相位移相π,使得在测量中表现为负电容。 相似文献
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Wei-Chou Hsu Dong-Hai Huang Yu-Shyan Lin Yeong-Jia Chen Jun-Chin Huang Chang-Luen Wu 《Electron Devices, IEEE Transactions on》2006,53(3):406-412
This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency. 相似文献
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《Electronics letters》1990,26(1):27-28
AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<> 相似文献
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A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array
Zheng X.G. Hsu J.S. Sun X. Hurst J.B. Li X. Wang S. Holmes A.L.Jr. Campbell J.C. Huntington A.S. Coldren L.A. 《Quantum Electronics, IEEE Journal of》2002,38(11):1536-1540
We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain. 相似文献
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S. Privitera F. Wang P. Dumont-Girard K. Liu C. Bongiorno 《Microelectronic Engineering》2010,87(3):430-433
SixCryCzBv thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature. 相似文献
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Jie Liu Yugang Zhou Rongming Chu Yong Cai Chen K.J. Lau K.M. 《Electron Device Letters, IEEE》2005,26(3):145-147
We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz. 相似文献
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Yi-Jen Chan Ming-Ta Yang 《Electron Devices, IEEE Transactions on》1995,42(10):1745-1749
The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<> 相似文献
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Patrick W. C. Ho Firas Odai Hatem Haider Abbas F. Almuri T. Nandha Kumar 《半导体学报》2016,37(6):064001-13
Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO2 and TaO2 nonvolatile memristive devices were compared and the factors that make TaO2 memristive devices better than TiO2 memristive devices were studied. TaO2 memristive devices have shown better endurance performances (108 times more switching cycles) and faster switching speed (5 times) than TiO2 memristive devices. Electroforming of TaO2 memristive devices requires~4.5 times less energy than TiO2 memristive devices of a similar size. The retention period of TaO2 memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO2 and TaO2 memristive devices. This article summarizes the reasons that give TaO2 memristive devices the advantage over TiO2 memristive devices, in terms of electroformation, switching speed, and endurance. 相似文献
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Zhiqun Cheng Jie Liu Yugang Zhou Yong Cai Chen K.J. Lau K.M. 《Electron Device Letters, IEEE》2005,26(8):521-523
We report broadband microwave noise characteristics of a high-linearity composite-channel HEMT (CC-HEMT). Owing to the novel composite-channel design, the CC-HEMT exhibits high gain and high linearity such as an output third-order intercept point (OIP3) of 33.2 dBm at 2 GHz. The CC-HEMT also exhibits excellent microwave noise performance. For 1-/spl mu/m gate-length devices, a minimum noise figure (NF/sub min/) of 0.7 dB and an associated gain (G/sub a/) of 19 dB were observed at 1 GHz, and an (NF/sub mi/) of 3.3 dB and a G/sub a/ of 10.8 dB were observed at 10 GHz. The dependence of the noise characteristics on the physical design parameters, such as the gate-source and gate-drain spacing, is also presented. 相似文献