正弦调频下大带宽激光调频连续波测距技术

基于激光调频连续波(FMCW)测距的原理搭建了双光路FMCW测距系统,用正弦调频替代了传统的线性调频,提高了扫频速率。研究了正弦调频下的FMCW测距原理,推导了正弦扫描的重采样公式,提出了信号拼接的方法来增大扫描带宽,并通过正交调制的方法消除拼接误差。实验结果表明,使用正交调制的方法拼接等光频重采样校正的信号后,频谱分辨力可达127μm,接近理论分辨力。在3.3～4m的范围内,所提方法的结果与参考干涉仪的误差不超过203μm,标准差小于194μm。     

基于等光频细分重采样的调频干涉测距方法

为了解决调频连续波(FMCW)激光器调制非线性导致的测量信号频谱展宽降低激光干涉测距精度的问题, 采用一种基于等光频细分重采样的调频干涉测距方法, 进行了理论分析和实验验证, 获得了双光路测距系统对不同位置目标信号等光频细分重采样后的波形数据, 并进行了频谱分析。结果表明, 通过等光频细分重采样的方法, 使用细分后的时钟信号点对距离大于辅助干涉光路光程差的目标测量信号进行重采样, 消除了激光器的调制非线性的影响, 并且避免了采样点数不足引起信号失真的问题; 在4.3m测量范围内, 等光频细分重采样测距系统与激光干涉仪相比最大残余误差不超过±18.46μm, 最大测量标准差为23.39μm; 该方法使用的辅助干涉光路光程差很短, 受环境的影响较小, 可以获得稳定的时钟信号, 并且可以减少双光路FMCW测距系统的体积与成本。该研究为长距离、高精度调频连续波测量提供了实用参考。     

一种光纤陀螺干涉仪光纤长度误差量测量方法

为提高光纤陀螺干涉仪保偏光纤长度误差量的测量精度,提出了一种基于四态方波调制的新的解决方法,将对光纤陀螺Sagnac干涉仪光纤长度误差量的测量转化为对探测器响应信号中尖峰脉冲的测量,并利用调制频率倍频技术实现了对尖峰脉冲的精细化测量。依据该方法设计制作了一套可检测光纤长度误差量的系统,达到了0.2 m的测量精度(2 000 m光纤)。实验结果表明,与普通保偏光纤测量方法相比,该方法测量精度高、速度快,为光纤陀螺的工程化装配提供了保障。     

基于相位补偿的调频连续波大长度测距中的色散校正

基于调频连续波测距的原理搭建并改进了双光路调频连续波测距系统,在测量光路增加光纤延迟线使测量距离拓展到了65 m.还研究了等光频重采样中色散的影响,推导出了带有色散和光纤延迟线的重采样模型,提出了在调频连续波大长度测距中通过频率幅度来调节相位补偿系数的色散校正方法.实验表明,在45~65 m的范围内增加了光纤延迟线并且有效的校正了色散,校正色散后在65. 165 m处测距值与干涉仪测量值最大误差小于500μm,标准差为246μm,频谱分辨力高达123μm,十分接近理论分辨力.文章的研究为调频连续波大尺寸测量提供了可行性的参考.     

基于大频差双频激光的发动机叶尖间隙测量技术

针对发动机叶尖间隙测量的复杂应用环境和高精度 要求,设计了基于大频差双频激光的叶尖间隙测量方案和系统。 依据相位法激光测距原理,选用大频差双频激光获得高频调制信号,采用光纤传输,设计了 高频弱光信号处理系统,采用全 相位傅里叶变换得到测量光路和参考光路的相位差,进而反算间隙。测量模型分析表明,系 统的精度主要由鉴相精度和测 尺精度决定,而与叶片、电磁干扰等大部分环境因素无关,可实现静态、动态标定和测量。 解决了非接触高速旋转叶片叶尖 间隙测量中无法动态标定和恶劣环境下众多噪声干扰等问题。系统测距精度为34.26μm,相位差标准差为0.257 。     

一种降低平面子孔径拼接累积误差的方法

干涉仪参考镜面形离焦误差难以精确标定,是导致拼接累积效应、制约平面子孔径拼接系统检测精度的主要因素。推导了参考镜离焦与拼接累积误差、拼接次数间的定量表达式,基于该表达式在拼接过程中标定并去除参考镜离焦误差,降低拼接累积误差。对450 mm×60 mm的平面镜进行了8个子孔径的拼接检测,与大口径干涉仪检测结果比对,去除参考面离焦误差前后拼接测量误差峰谷(PV)值从λ/10减小至λ/30,有效提高了拼接测量精度。结合绝对检验技术标定参考镜高阶面形误差,验证了离焦是引起拼接误差累积的主要因素,消除参考镜高阶面形误差并不能显著提高拼接检测精度。     

光纤F P腔干涉双路信号解包裹相位恢复

利用一套光纤F P干涉仪同时测量双路不同幅度和频率正弦信号,分析了光纤F P腔干涉信号相位特性。弱反馈环境中,开展了双路反馈光纤F P腔干涉测量,进行了巴特沃斯低通滤波。基于多次解包络方法,对预处理信号实施了分离。采用多次希尔伯特变换相位提取法,从光纤F P腔干涉分离信号实现了原始信号的恢复。为了进一步提高信号恢复精度,提出了一种新的跳变点检测方法,对应峰峰值2μm、频率60 Hz的正弦信号,该方法最大误差为0095μm;对应峰峰值4μm、频率05 Hz的正弦信号,其最大误差为0145μm。     

大量程光纤干涉测距中的三级量程倍增技术

利用光纤准白光干涉原理,引入光学倍增、光纤组倍增及光开关倍增的三级级联结构,采用200mm短扫描导轨达到了大于12m的绝对测距,并利用系统自身特点巧妙地对倍增光纤组及光开关的光纤光程差进行自标定,实现了光波长基准的传递;对精度作了简要分析。实验结果表明：该系统长时间重复性精度优于1μm,测量的相对精度优于10^-5。     

F P干涉仪构成的光纤位移传感器

设计了一款基于光纤法布里 珀罗（F P）干涉仪型的位移传感器。首先将单模光纤和无芯光纤拼接在一起,把无芯光纤的末端切成平面,然后把该结构固定在精密位移平台上,最后在无芯光纤末端位置处垂直放置一面全反镜,构成一个复合的F P干涉仪。实验中,调节精密位移平台上的千分尺来改变无芯光纤与平面镜镜面的距离,从而改变F P干涉仪的腔长。实验结果表明,干涉仪的反射谱谐振峰中心波长随位移变化发生线性漂移,通过考察中心波长漂移量实现位移量的精确测量。实验获得传感器最大位移灵敏度为-80.95 pm/μm,测量最大位移量为160 μm。设计的光纤位移传感器结构简单,易制作及灵敏度高,在航空航天、海底探测等精度要求较高的微位移测量场合具有一定的应用前景。     

基于相位拼接的调频连续波激光雷达跳模影响消除方法

为了消除激光跳模对调频连续波激光测距的影响,提出了一种基于重采样信号相位拼接的跳模影响消除方法.该方法利用重采样信号相位展开求导的结果来定位激光跳模发生的时间,并对重采样信号跳模处两端的峰值进行相位拼接来去除跳模段的重采样信号.通过对相位拼接后的重采样信号进行Chirp-Z变换可以得到不受激光跳模影响的目标距离谱.系统对光程约为21.16 m的延时光纤进行多次测量,实验效果证明此方法可以消除调频激光跳模对距离测量的影响,并实现了 12 μm的测距标准差.     

P-μc-Si1-xGex ：H thin film by VHF-PECVD

In this paper, a series of boron doped microcrystalline hydrogenated silicon-germanium （p-μc-Si1-xGex：H） was deposited by very high frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） from SiH4 and GeF4 mixtures. The effect of GeF4 concentration on films＇ composition, structure and electrical properties was studied. The results show that with the increase of GeF4 concentration, the Ge fraction x increases. The dark conductivity and crystalline volume fraction increase first, and then decrease. When the GC is 4%, p-μc-Si1-xGex：H material with high conductivity, low activation energy （σ= 1.68 S/cm, E8=0.047 eV）, high crystalline volume fraction （60%） and with an average transmission coefficient over the long wave region reaching 0.9 at the thickness of 72 nm was achieved. The experimental results were discussed in detail.     

A robust method to measure residual stress in micro-structure

An experimental investigation on the residual stress in porous silicon micro-structure by means of micro-Raman spectros- copy is presented. It is shown by detecting the Raman peak shifts on the surfaces and cross-sections of electrochemical etched porous silicon samples with different porosities that serious residual stresses distribute complicatedly within the whole porous silicon structure. It is proved that micro-Raman spectroscopy is an effective method for residual stress testing on the micro-structures applied in optoelectronics and microelectronics.     

新型白光LED荧光粉Y2O3:Ti 3+的光谱性能

采用共沉淀法,在不同的烧结气氛下制备了Y₂O₃:Ti ³⁺粉体,测量了它们的激发、发射光谱以及XRD光谱,观测了形貌。在紫外光激发下,微晶Y₂O₃:Ti ³⁺在439nm附近有较强的发射带,而纳米Y₂O₃:Ti ³⁺在400~500nm范围内出现了强的发射带。随纳米粉体的晶粒尺寸减小,它的发光明显增强,覆盖了整个可见光区。结果表明Y₂O₃:Ti ³⁺纳米粉体有望成为新一代白光LED或汞灯的光转换荧光粉。     

Optimal design of APD biasing circuit

This paper proposes a control method for avalanche photodiode(APD) reverse bias with temperature compensation and load resistance compensation. The influence of background light and load resistance on APD detection circuit is analyzed in detail. A theoretical model of temperature compensation and load resistance compensation is established,which is used for APD biasing circuit designing. It is predicted that this control method is especially suitable for LD laser range finder used on vehicles. Experimental results confirm that the design proposed in this paper can considerablely improve the performance of range finder.     

中频溅射技术制备镱铒共掺Al2O3光波导

在硅单晶(100)衬底上用热氧化法氧化一层SiO₂做缓冲层,在高纯铝靶上镶嵌金属Yb,Er,然后用中频磁控溅射法制备了镱铒共掺杂氧化铝薄膜。讨论了靶电压及沉积速率随氧流量的变化的磁滞回线效应,分析得出了沉积氧化物薄膜的最佳氧流量。在室温下检测到了薄膜的位于1535nm的很强的光致发光光谱(PL),并在光学掩模下用BCl₃离子束对薄膜样品进行刻蚀,得到条形光波导。     

Optical-spectrum-encoded analog-to-digital converter

A novel optical-spectrum-encoded(OSE) analog-to-digital converter(ADC) is proposed in this letter. To simply exemplify the conversion idea,a 5-bit device structure consisted of Fabry-Perot interferometers(FPI) is analyzed and numerically simulated. The dependence of peak-transmission wavelength on modulation voltage in an electro-optical FPI and the dependence of transmitted power on incident light wavelength in an FPI are discussed and utilized to implement OSEADC. A linearly tunable mode-locked laser,as a voltage-wavelength transformer and a sampler,and chirped grating FPIs,as an encoder array,can be used to obtain much greater sampling rate and bit-resolution.     

Ablation pressure of the shock wave generated by laser interaction with solid targets

The time evolution process of the plasma generated by laser pulse interaction with solid target in air is observed by optical shadowgraph imaging technique. The ablation pressure of the shock wave generated with the plasma is calculated analytically. It is found that plasma expansion in perpendicular and lateral directions are both proportional to t2/5 with t as delay time, and the ablation pressure reaches 10~8 Pa.     

Organic thin film transistors with PMMA modified insulator

A double insulation layer structure organic thin films transistor (OTFT) was investigated for improving the performance of the SiO2 gate insulator. A 50 nm PMMA layer was coated on top of the SiO2 gate insulator as the organic insulator layer. The results demonstrated that using inorganic/organic compound insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics and decreased leakage current. Electrical parameters of carrier mobility and on/off ratio were calculated. OTFT based on Si substrate with a field-effect mobility of 4.0 × 10-3cm2/Vs and on/off ratio of 104 was obtained.     

Silicon Geiger mode avalanche photodiodes

In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes(GMAP) fabricated by silicon standard planar technology. Low dark count rates,negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields,as telecommunications and nuclear medical imaging.     

Effect of different processing methods for the hole transporting layer on the performance of double layer organic light-emitting devices

The hole transporting layer （HTL） of organic light-emitting device （OLED） was processed by vacuum deposition and spin coating method, respectively, where N,N＇-biphenyl-N, N＇-bis（3-methylphenyl）- 1, l＇-biphenyl-4,4＇ -diamine （TPD） and poly （vinylcarbazole） （PVK） acted as the hole-transport materials. Tris-（8-hydroxyquinoline）- aluminum （Alq3） was utilized as both the light-emitting layer and the electron transporting layer. The basic structure of the device cell was： indium-tin-oxide （1TO）/PVK ： TPD/Alq3/Mg：Ag. The electroluminescent （EL） characteristics of devices were characterized. The results showed that the peak of EL spectra was located at 530 nm, which conformed to the characterizing spectrum of Alq3. Compared with using vacuum deposition method, the green emission with a maximum luminance up to 26135 cd/m2 could be achieved at a drive voltage of 15 V by selecting proper solvent using spin-coating technique, and its maximum lumi nance efficiency was 2.56 lm/W at a drive voltage of 5.5 V.