基于对消解调的时相调制误码率分析

以二进制为例,从对消解调的角度,导出了时相调制(TPM)信号在加性白高斯噪声信道下的误码率解析表达式.可以发现:TPM信号误码率与码元突变后的波形持续时间成反比,即相同信噪比条件下持续对间越长则误码率越小.通过对比判决统计量,可以发现对消解调是相关解调的简洁实现方式.仿真结果验证了上述理论推导.其结论可为进一步分析时相调制的其他解调方法性能提供参照和依据.     

AWGN信道中超窄带调制VMSK的最佳解调性能

以甚小移键控(VMSK)为例,针对加性白高斯噪声(AWGN)信道中的解调性能进行研究,基于信号接收的分类器模型,从最基本的概率方法出发,利用最小错误率贝叶斯准则,得到最低误比特率的接收方式及其性能.并从相关检测一致性、最佳性能以及可推广性的角度进行了详细阐述.分析结果表明,VMSK调制方式中表示1和0的信号波形中相同部分的能量并不能提高误码率性能.若要获得相同的误码性能,VMSK需要比BPSK更高的信噪比.此结论可以推广到其他UNB调制.     

一种利用信源冗余的Turbo均衡新算法

为克服无线衰落信道中严重的符号间干扰( ISI)的影响,提出了一种新的利用信源冗余的Turbo均衡算法。该算法将联合信源信道译码技术与Turbo均衡技术结合起来,在均衡、译码、信源之间建立起软信息交互的环路,有效提高了整体接收的性能。外信息传递( EXIT)图分析与计算机仿真均表明,尽管信源冗余给译码器带来的性能提升较为有限,但是将这部分信息反馈回均衡器后,在严重ISI信道,信源冗余度为70%时,整体接收的性能改善约为9.5 dB,基本达到了理想加性高斯白噪声( AWGN)信道下的误码性能。     

一种利用信源冗余的Turbo均衡新算法

为克服无线衰落信道中严重的符号间干扰(ISI)的影响,提出了一种新的利用信源冗余的Turbo均衡算法。该算法将联合信源信道译码技术与Turbo均衡技术结合起来,在均衡、译码、信源之间建立起软信息交互的环路,有效提高了整体接收的性能。外信息传递(EXIT)图分析与计算机仿真均表明,尽管信源冗余给译码器带来的性能提升较为有限,但是将这部分信息反馈回均衡器后,在严重ISI信道,信源冗余度为70%时,整体接收的性能改善约为9.5 dB,基本达到了理想加性高斯白噪声（AWGN）信道下的误码性能。     

基于施密特正交化的降噪多载波相关延迟键控混沌通信系统

为解决传统相关延迟键控(CDSK)混沌通信系统存在的误码(BER)性能差的问题,该文提出一种基于施密特正交化的降噪多载波相关延迟键控(NR-MC-CDSK)混沌通信系统。在发送端,利用施密特正交化算法产生N组完全正交的混沌载波,并复制P次作为参考信号,与N个信息信号叠加进行传输,并利用多载波技术,复用每帧信号传输MN个用户信息。在接收端,将信号经匹配滤波器解调,然后通过滑动平均滤波器降噪,并进行相关解调。推导了系统在加性高斯白噪声(AWGN)信道和多径Rayleigh衰落信道中的BER公式并进行了仿真分析,结果表明系统的BER性能优于众多多载波混沌通信系统,数据传输速率也相较CDSK系统有明显提升,为该系统在实际通信系统中的应用提供了理论依据,并显示了较强的应用价值。     

基于施密特正交化的降噪多载波相关延迟键控混沌通信系统

为解决传统相关延迟键控(CDSK)混沌通信系统存在的误码(BER)性能差的问题,该文提出一种基于施密特正交化的降噪多载波相关延迟键控(NR-MC-CDSK)混沌通信系统.在发送端,利用施密特正交化算法产生N组完全正交的混沌载波,并复制P次作为参考信号,与N个信息信号叠加进行传输,并利用多载波技术,复用每帧信号传输MN个用户信息.在接收端,将信号经匹配滤波器解调,然后通过滑动平均滤波器降噪,并进行相关解调.推导了系统在加性高斯白噪声(AWGN)信道和多径Rayleigh衰落信道中的BER公式并进行了仿真分析,结果表明系统的BER性能优于众多多载波混沌通信系统,数据传输速率也相较CDSK系统有明显提升,为该系统在实际通信系统中的应用提供了理论依据,并显示了较强的应用价值.     

基于矩阵低秩估计的可靠多载波差分混沌键控接收机

在多载波差分混沌键控(MC-DCSK)系统中,经由无线信道传输在接收端进行检测时,参考混沌信号的传输差错将降低承载信息的检测性能,降低传输可靠性.为了提高可靠性,该文基于承载信息的调制信号因共享参考混沌信号的低秩特性,提出了一种基于矩阵低秩估计(LRAM)的MC-DCSK接收机,增强系统可靠性.该接收机将接收信号矩阵表示为秩1矩阵和噪声矩阵之和,然后对接收信号矩阵进行低秩估计,以得到参考信号的最优估计,并进而将其用于承载信息的调制信号的检测和解调,从而提升系统传输可靠性.继而,该文证明了LRAM检测可等效于最大似然估计检测,并对信息泄露率理论安全性能进行了分析,分析结果表明所提方案安全性与基准MC-DCSK系统一致.仿真结果验证了该接收机在加性高斯白噪声(AWGN)和多径衰落信道下可有效提升MC-DCSK系统的可靠性.     

基于矩阵低秩估计的可靠多载波差分混沌键控接收机

在多载波差分混沌键控(MC-DCSK)系统中,经由无线信道传输在接收端进行检测时,参考混沌信号的传输差错将降低承载信息的检测性能,降低传输可靠性。为了提高可靠性,该文基于承载信息的调制信号因共享参考混沌信号的低秩特性,提出了一种基于矩阵低秩估计(LRAM)的MC-DCSK接收机,增强系统可靠性。该接收机将接收信号矩阵表示为秩1矩阵和噪声矩阵之和,然后对接收信号矩阵进行低秩估计,以得到参考信号的最优估计,并进而将其用于承载信息的调制信号的检测和解调,从而提升系统传输可靠性。继而,该文证明了LRAM检测可等效于最大似然估计检测,并对信息泄露率理论安全性能进行了分析,分析结果表明所提方案安全性与基准MC-DCSK系统一致。仿真结果验证了该接收机在加性高斯白噪声(AWGN)和多径衰落信道下可有效提升MC-DCSK系统的可靠性。     

多用户降噪差分混沌键控通信方案

传统多用户差分混沌键控主要缺点是误码率差,该文提出一种多用户降噪差分混沌键控(MU-NRDCSK)通信方案。在发射端,发送M/P长度混沌序列,复制P次后作为参考信号,所有用户共用同一参考信号,信息信号延迟不同的时间来区分用户。在接收端,将接收到的信号通过滑动平均滤波器平均,再与其不同时间延迟后的信号进行相关。该方案通过降低噪声项的方差来提高系统误码性能。文中推导了该方案在加性高斯白噪声(AWGN)信道和Rayleigh信道下的理论误码率公式并进行了蒙特卡洛仿真。理论分析和仿真结果表明,理论公式与仿真结果能较好地吻合,MU-NRDCSK方案能较好地提高系统误码性能,在混沌通信领域具有很好的发展前景与研究价值。     

一种新的FSK最佳相干解调器

本文讨论在信号各频率振幅受到的衰减不一致并存在有色加性高斯噪声(IGDF-ACGN)信道条件下,FSK信号的最佳相干解调问题。基于矢量表示系统模型的方法,导出了最佳解调器的结构。从理论分析和计算机模拟实验结果都证明了所导得的最佳解调器,不仅在IGDF-ACGN信道条件下是最佳的,而且在加性高斯白噪声(AWGN)信道条件下也是最佳的。文中还导出了相应的误码率公式,给出了误码率数值计算和计算机模拟曲线。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.