GPS定位技术在航天器高动态导航中的应用问题研究

本文着重讲述了 GPS 系统在航天器动态导航中的应用问题，分析了航天器高动态环境下对 GPS 信号的捕获和跟踪所带来的影响。提出了 FFT 码快速捕获算法，以及二阶 FLL 与三阶 PLL 混合载波跟踪方案，并对码环和载波环的结构和参数的设计方法进行了说明。仿真结果和分析表明该方案能在航天器高动态环境下实现信号的快速捕获，且能较好地满足接收机动态性能和跟踪精度的要求。     

高动态接收机的关键问题研究

为检测高动态GPS(Global Positioning System)信号,需要设计码环及载波环的捕获与跟踪数字系统.在高动态下,在GPS信号的码跟踪和载波捕获与跟踪问题中最关键的是要解决在高加速度下的载波跟踪问题.主要讨论了在高动态下,结合GEC公司的十二通道相关器GP2021,载波跟踪环路的特性并在此基础上提出了一个新的方法来改善载波跟踪环路的性能.     

高动态GPS接收机环路跟踪技术研究

为了解决加速度45g、加加速度10g/s的高动态环境下GPS信号的载波跟踪、码跟踪及其精度问题,提出了一种综合考虑动态和精度性能的载波环和码环优化设计方案,探讨了高动态情况下载波环和码环的结构设计及捕获转跟踪技术,分析了FLL/PLL/DLL环路的动态应力、暂态响应和鉴别器特性,总结了实用的控制策略和环路带宽。该方案经自主开发的软件接收机测试验证,可以在达到很高动态特性的同时满足一定的测距精度和定位精度要求。     

高动态扩频信号的载波跟踪技术研究

针对高动态环境下扩频信号的载波捕获与跟踪问题,本文分析了多普勒频移对锁相环、锁频环以及环路滤波器设计的影响,以及高动态环境中载波快速捕获问题,在此基础上提出了一种数字复合软环的设计方法,计算机仿真结果表明这种数字复合软环能有效地解决载波快捕与精跟踪的问题.     

高动态扩频信号的载波跟踪技术研究

针对高动态环境下扩频信号的载波捕获与跟踪问题，本文分析了多普勒频移对锁相环、锁频环以及环路滤波器设计的影响，以及高动态环境中载波快速捕获问题，在此基础上提出了一种数字复合软环的设计方法，计算机仿真结果表明这种数字复合软环能有效地解决载波快捕与精跟踪的问题．     

基于DSP的高动态接收机载波捕获跟踪技术

介绍了高动态GPS接收机的码捕获与载波跟踪的原理,设计了一种基于高速数字信号处理(DSP)技术的PLL FLL环混合全数字高动态载波跟踪技术方案,同时给出了一种在连续高动态下载波跟踪算法即基于交叠离散傅里叶变换的频率跟踪算法(ODAFC),并对此算法进行了仿真验证.仿真结果证明了该算法的正确性.     

基于最大似然估计的高动态GPS载波跟踪环

 基于最大似然估计提出了一种全新设计的GPS载波跟踪环结构,并将该环路应用于高动态、低信噪比条件下的GPS载波频率跟踪. 文中给出了环路的设计细节,并详细讨论了环路中各模块的功能及模块之间的参数传递. 利用具有典型高动态参数的GPS载波信号对环路的跟踪性能进行了测试. 测试结果表明,与普通GPS接收机的载波跟踪环相比,该环路对高动态环境下的失锁门限和门限附近的频率跟踪精度均有显著改善.     

高动态环境载波跟踪环路的设计

为了满足高动态环境下对测轨定位的需求,对数字中频接收机载波同步跟踪关键技术进行了研究。针对高动态环境下载波同步需要解决的捕获带宽、捕获速度与跟踪精度的矛盾,综合利用了传统数字锁频环路和数字锁相环路的优点,设计了一种适合高动态环境下数字中频接收机的锁频联合锁相环工作的环路方案。仿真和测试结果表明:改进算法解决了环路跟踪精度和动态性能不能兼顾的矛盾,信号跟踪环路能在高动态环境中实现对信号的稳定跟踪。     

扩频通信中PN码序列的捕获

扩频信号的捕获与跟踪是扩频接收机进行定位解扩的基础,文中基于FPGA进行了扩频信号捕获与跟踪的设计实现。分析了该方案的匹配滤波器、载波跟踪环、码跟踪环的设计与实现方法。并通过BPSK调制,使用非相干扩频通信的PN码并行捕获算法实现信号的捕获。     

基于ASPeCT的BOC调制信号捕获与跟踪研究

针对BOC调制信号传统捕获算法的模糊问题,在对直接捕获法、BPSK-Like法以及ASPeCT法分析的基础上,确定了ASPeCT法作为信号接收机捕获模块的设计方案。然后设计了基于BOC调制信号的跟踪环路,在对载波环和码环分析的基础上,确定了锁频环辅助锁相环作为环路中载波环的设计方案,以及修正后的EMLP鉴相器为环路中码环的设计方案。最后,对基于ASPeCT法捕获及基于锁频环辅助锁相环、ASPeCT修正码环的信号跟踪进行了实验仿真,验证了捕获模块和跟踪环路方案的有效性。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.